DE69828588T2 - Struktur zur erhöhung der maximalen spannung von siliziumkarbid-leistungstransistoren - Google Patents
Struktur zur erhöhung der maximalen spannung von siliziumkarbid-leistungstransistoren Download PDFInfo
- Publication number
- DE69828588T2 DE69828588T2 DE69828588T DE69828588T DE69828588T2 DE 69828588 T2 DE69828588 T2 DE 69828588T2 DE 69828588 T DE69828588 T DE 69828588T DE 69828588 T DE69828588 T DE 69828588T DE 69828588 T2 DE69828588 T2 DE 69828588T2
- Authority
- DE
- Germany
- Prior art keywords
- type
- epitaxial layer
- region
- trench
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 98
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 98
- 230000015556 catabolic process Effects 0.000 claims abstract description 26
- 230000000694 effects Effects 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 18
- 230000005669 field effect Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 43
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000006731 degradation reaction Methods 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims 5
- 230000002517 constrictor effect Effects 0.000 claims 2
- AIOWANYIHSOXQY-UHFFFAOYSA-N cobalt silicon Chemical compound [Si].[Co] AIOWANYIHSOXQY-UHFFFAOYSA-N 0.000 claims 1
- 210000001550 testis Anatomy 0.000 claims 1
- 230000001681 protective effect Effects 0.000 abstract description 8
- 239000012212 insulator Substances 0.000 abstract description 5
- 230000000593 degrading effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 103
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 230000005684 electric field Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 108091006146 Channels Proteins 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000002231 Czochralski process Methods 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 101001094044 Mus musculus Solute carrier family 26 member 6 Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- -1 SiC metals Chemical class 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 101150101567 pat-2 gene Proteins 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
- H10D62/107—Buried supplementary regions, e.g. buried guard rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US795135 | 1991-11-20 | ||
| US08/795,135 US6570185B1 (en) | 1997-02-07 | 1997-02-07 | Structure to reduce the on-resistance of power transistors |
| US08/797,535 US6180958B1 (en) | 1997-02-07 | 1997-02-07 | Structure for increasing the maximum voltage of silicon carbide power transistors |
| US797535 | 1997-02-07 | ||
| PCT/US1998/002384 WO1998035390A1 (en) | 1997-02-07 | 1998-02-06 | Structure for increasing the maximum voltage of silicon carbide power transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69828588D1 DE69828588D1 (de) | 2005-02-17 |
| DE69828588T2 true DE69828588T2 (de) | 2006-02-09 |
Family
ID=27121597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69828588T Expired - Lifetime DE69828588T2 (de) | 1997-02-07 | 1998-02-06 | Struktur zur erhöhung der maximalen spannung von siliziumkarbid-leistungstransistoren |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0966763B1 (enExample) |
| JP (1) | JP5054255B2 (enExample) |
| AT (1) | ATE287127T1 (enExample) |
| AU (1) | AU6272798A (enExample) |
| DE (1) | DE69828588T2 (enExample) |
| ES (1) | ES2236887T3 (enExample) |
| WO (1) | WO1998035390A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009016681B4 (de) * | 2008-04-14 | 2020-12-31 | Denso Corporation | Verfahren zur Herstellung einer Siliciumcarbid-Halbleitervorrichtung |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3716490B2 (ja) | 1996-04-05 | 2005-11-16 | トヨタ自動車株式会社 | 制動力制御装置 |
| DE69836319T2 (de) | 1997-03-06 | 2007-06-21 | Toyota Jidosha Kabushiki Kaisha, Toyota | Bremskraftsteuergerät |
| US6313482B1 (en) | 1999-05-17 | 2001-11-06 | North Carolina State University | Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein |
| US6392273B1 (en) * | 2000-01-14 | 2002-05-21 | Rockwell Science Center, Llc | Trench insulated-gate bipolar transistor with improved safe-operating-area |
| JP4738562B2 (ja) * | 2000-03-15 | 2011-08-03 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP4865166B2 (ja) * | 2001-08-30 | 2012-02-01 | 新電元工業株式会社 | トランジスタの製造方法、ダイオードの製造方法 |
| SE525574C2 (sv) | 2002-08-30 | 2005-03-15 | Okmetic Oyj | Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter |
| JP4564362B2 (ja) * | 2004-01-23 | 2010-10-20 | 株式会社東芝 | 半導体装置 |
| GB0417749D0 (en) * | 2004-08-10 | 2004-09-08 | Eco Semiconductors Ltd | Improved bipolar MOSFET devices and methods for their use |
| JP4802542B2 (ja) * | 2005-04-19 | 2011-10-26 | 株式会社デンソー | 炭化珪素半導体装置 |
| JP2008016747A (ja) * | 2006-07-10 | 2008-01-24 | Fuji Electric Holdings Co Ltd | トレンチｍｏｓ型炭化珪素半導体装置およびその製造方法 |
| JP5444608B2 (ja) | 2007-11-07 | 2014-03-19 | 富士電機株式会社 | 半導体装置 |
| DE112011104322T5 (de) * | 2010-12-10 | 2013-10-02 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung |
| JP6197995B2 (ja) | 2013-08-23 | 2017-09-20 | 富士電機株式会社 | ワイドバンドギャップ絶縁ゲート型半導体装置 |
| WO2016047438A1 (ja) | 2014-09-26 | 2016-03-31 | 三菱電機株式会社 | 半導体装置 |
| JP6698697B2 (ja) * | 2015-01-27 | 2020-05-27 | アーベーベー・シュバイツ・アーゲー | 絶縁ゲートパワー半導体デバイスおよびそのデバイスの製造方法 |
| DE112016002613B4 (de) | 2015-06-09 | 2022-04-28 | Mitsubishi Electric Corporation | Leistungs-Halbleiterbauelement |
| US10468487B2 (en) | 2015-10-16 | 2019-11-05 | Mitsubishi Electric Corporation | Semiconductor device |
| WO2017138215A1 (ja) | 2016-02-09 | 2017-08-17 | 三菱電機株式会社 | 半導体装置 |
| US9728599B1 (en) | 2016-05-10 | 2017-08-08 | Fuji Electric Co., Ltd. | Semiconductor device |
| JP6855793B2 (ja) | 2016-12-28 | 2021-04-07 | 富士電機株式会社 | 半導体装置 |
| JP7067021B2 (ja) | 2017-11-07 | 2022-05-16 | 富士電機株式会社 | 絶縁ゲート型半導体装置及びその製造方法 |
| GB2572442A (en) * | 2018-03-29 | 2019-10-02 | Cambridge Entpr Ltd | Power semiconductor device with a double gate structure |
| US20250098208A1 (en) * | 2023-09-19 | 2025-03-20 | Ge Aviation Systems Llc | Radiation hardened semicondcutor power device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4941026A (en) * | 1986-12-05 | 1990-07-10 | General Electric Company | Semiconductor devices exhibiting minimum on-resistance |
| JPH0783118B2 (ja) * | 1988-06-08 | 1995-09-06 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US5168331A (en) * | 1991-01-31 | 1992-12-01 | Siliconix Incorporated | Power metal-oxide-semiconductor field effect transistor |
| JP2682272B2 (ja) * | 1991-06-27 | 1997-11-26 | 三菱電機株式会社 | 絶縁ゲート型トランジスタ |
| US5233215A (en) * | 1992-06-08 | 1993-08-03 | North Carolina State University At Raleigh | Silicon carbide power MOSFET with floating field ring and floating field plate |
| JP2883501B2 (ja) * | 1992-09-09 | 1999-04-19 | 三菱電機株式会社 | トレンチ絶縁ゲート型バイポーラトランジスタおよびその製造方法 |
| US5506421A (en) * | 1992-11-24 | 1996-04-09 | Cree Research, Inc. | Power MOSFET in silicon carbide |
| US5488236A (en) * | 1994-05-26 | 1996-01-30 | North Carolina State University | Latch-up resistant bipolar transistor with trench IGFET and buried collector |
| US5688725A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance |
-
1998
- 1998-02-06 AU AU62727/98A patent/AU6272798A/en not_active Abandoned
- 1998-02-06 AT AT98904992T patent/ATE287127T1/de not_active IP Right Cessation
- 1998-02-06 WO PCT/US1998/002384 patent/WO1998035390A1/en not_active Ceased
- 1998-02-06 JP JP53494498A patent/JP5054255B2/ja not_active Expired - Lifetime
- 1998-02-06 ES ES98904992T patent/ES2236887T3/es not_active Expired - Lifetime
- 1998-02-06 EP EP98904992A patent/EP0966763B1/en not_active Expired - Lifetime
- 1998-02-06 DE DE69828588T patent/DE69828588T2/de not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009016681B4 (de) * | 2008-04-14 | 2020-12-31 | Denso Corporation | Verfahren zur Herstellung einer Siliciumcarbid-Halbleitervorrichtung |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0966763A1 (en) | 1999-12-29 |
| AU6272798A (en) | 1998-08-26 |
| DE69828588D1 (de) | 2005-02-17 |
| JP2001511315A (ja) | 2001-08-07 |
| WO1998035390A1 (en) | 1998-08-13 |
| EP0966763B1 (en) | 2005-01-12 |
| JP5054255B2 (ja) | 2012-10-24 |
| ES2236887T3 (es) | 2005-07-16 |
| ATE287127T1 (de) | 2005-01-15 |
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