JP5054255B2 - シリコン・カーバイド・パワー・トランジスタの最大電圧を増大させるための構造 - Google Patents

シリコン・カーバイド・パワー・トランジスタの最大電圧を増大させるための構造 Download PDF

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JP5054255B2
JP5054255B2 JP53494498A JP53494498A JP5054255B2 JP 5054255 B2 JP5054255 B2 JP 5054255B2 JP 53494498 A JP53494498 A JP 53494498A JP 53494498 A JP53494498 A JP 53494498A JP 5054255 B2 JP5054255 B2 JP 5054255B2
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type
silicon carbide
power transistor
umos
epitaxial layer
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Expired - Lifetime
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JP53494498A
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Japanese (ja)
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JP2001511315A (ja
JP2001511315A5 (enExample
Inventor
クーパー，ジェームズ・アルバート，ジュニアー
タン，ジャン
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Priority claimed from US08/795,135 external-priority patent/US6570185B1/en
Priority claimed from US08/797,535 external-priority patent/US6180958B1/en
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Publication of JP2001511315A5 publication Critical patent/JP2001511315A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP53494498A 1997-02-07 1998-02-06 シリコン・カーバイド・パワー・トランジスタの最大電圧を増大させるための構造 Expired - Lifetime JP5054255B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US08/795,135 US6570185B1 (en) 1997-02-07 1997-02-07 Structure to reduce the on-resistance of power transistors
US08/797,535 US6180958B1 (en) 1997-02-07 1997-02-07 Structure for increasing the maximum voltage of silicon carbide power transistors
US08/797,535 1997-02-07
US08/795,135 1997-02-07
PCT/US1998/002384 WO1998035390A1 (en) 1997-02-07 1998-02-06 Structure for increasing the maximum voltage of silicon carbide power transistors

Publications (3)

Publication Number Publication Date
JP2001511315A JP2001511315A (ja) 2001-08-07
JP2001511315A5 JP2001511315A5 (enExample) 2005-10-06
JP5054255B2 true JP5054255B2 (ja) 2012-10-24

Family

ID=27121597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53494498A Expired - Lifetime JP5054255B2 (ja) 1997-02-07 1998-02-06 シリコン・カーバイド・パワー・トランジスタの最大電圧を増大させるための構造

Country Status (7)

Country Link
EP (1) EP0966763B1 (enExample)
JP (1) JP5054255B2 (enExample)
AT (1) ATE287127T1 (enExample)
AU (1) AU6272798A (enExample)
DE (1) DE69828588T2 (enExample)
ES (1) ES2236887T3 (enExample)
WO (1) WO1998035390A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9093493B2 (en) 2013-08-23 2015-07-28 Fuji Electric Co., Ltd. Wide bandgap insulated gate semiconductor device
US9728599B1 (en) 2016-05-10 2017-08-08 Fuji Electric Co., Ltd. Semiconductor device
US10008592B1 (en) 2016-12-28 2018-06-26 Fuji Electric Co., Ltd. Semiconductor device

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3716490B2 (ja) 1996-04-05 2005-11-16 トヨタ自動車株式会社 制動力制御装置
DE69836319T2 (de) 1997-03-06 2007-06-21 Toyota Jidosha Kabushiki Kaisha, Toyota Bremskraftsteuergerät
US6313482B1 (en) 1999-05-17 2001-11-06 North Carolina State University Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein
US6392273B1 (en) * 2000-01-14 2002-05-21 Rockwell Science Center, Llc Trench insulated-gate bipolar transistor with improved safe-operating-area
JP4738562B2 (ja) * 2000-03-15 2011-08-03 三菱電機株式会社 半導体装置の製造方法
JP4865166B2 (ja) * 2001-08-30 2012-02-01 新電元工業株式会社 トランジスタの製造方法、ダイオードの製造方法
SE525574C2 (sv) 2002-08-30 2005-03-15 Okmetic Oyj Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter
JP4564362B2 (ja) * 2004-01-23 2010-10-20 株式会社東芝 半導体装置
GB0417749D0 (en) * 2004-08-10 2004-09-08 Eco Semiconductors Ltd Improved bipolar MOSFET devices and methods for their use
JP4802542B2 (ja) * 2005-04-19 2011-10-26 株式会社デンソー 炭化珪素半導体装置
JP2008016747A (ja) * 2006-07-10 2008-01-24 Fuji Electric Holdings Co Ltd トレンチｍｏｓ型炭化珪素半導体装置およびその製造方法
JP5444608B2 (ja) 2007-11-07 2014-03-19 富士電機株式会社 半導体装置
JP4640436B2 (ja) * 2008-04-14 2011-03-02 株式会社デンソー 炭化珪素半導体装置の製造方法
DE112011104322T5 (de) * 2010-12-10 2013-10-02 Mitsubishi Electric Corporation Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
WO2016047438A1 (ja) 2014-09-26 2016-03-31 三菱電機株式会社 半導体装置
JP6698697B2 (ja) * 2015-01-27 2020-05-27 アーベーベー・シュバイツ・アーゲー 絶縁ゲートパワー半導体デバイスおよびそのデバイスの製造方法
DE112016002613B4 (de) 2015-06-09 2022-04-28 Mitsubishi Electric Corporation Leistungs-Halbleiterbauelement
US10468487B2 (en) 2015-10-16 2019-11-05 Mitsubishi Electric Corporation Semiconductor device
WO2017138215A1 (ja) 2016-02-09 2017-08-17 三菱電機株式会社 半導体装置
JP7067021B2 (ja) 2017-11-07 2022-05-16 富士電機株式会社 絶縁ゲート型半導体装置及びその製造方法
GB2572442A (en) * 2018-03-29 2019-10-02 Cambridge Entpr Ltd Power semiconductor device with a double gate structure
US20250098208A1 (en) * 2023-09-19 2025-03-20 Ge Aviation Systems Llc Radiation hardened semicondcutor power device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4941026A (en) * 1986-12-05 1990-07-10 General Electric Company Semiconductor devices exhibiting minimum on-resistance
JPH0783118B2 (ja) * 1988-06-08 1995-09-06 三菱電機株式会社 半導体装置およびその製造方法
US5168331A (en) * 1991-01-31 1992-12-01 Siliconix Incorporated Power metal-oxide-semiconductor field effect transistor
JP2682272B2 (ja) * 1991-06-27 1997-11-26 三菱電機株式会社 絶縁ゲート型トランジスタ
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
JP2883501B2 (ja) * 1992-09-09 1999-04-19 三菱電機株式会社 トレンチ絶縁ゲート型バイポーラトランジスタおよびその製造方法
US5506421A (en) * 1992-11-24 1996-04-09 Cree Research, Inc. Power MOSFET in silicon carbide
US5488236A (en) * 1994-05-26 1996-01-30 North Carolina State University Latch-up resistant bipolar transistor with trench IGFET and buried collector
US5688725A (en) * 1994-12-30 1997-11-18 Siliconix Incorporated Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9093493B2 (en) 2013-08-23 2015-07-28 Fuji Electric Co., Ltd. Wide bandgap insulated gate semiconductor device
US9318547B2 (en) 2013-08-23 2016-04-19 Fuji Electric Co., Ltd. Wide bandgap insulated gate semiconductor device
US9728599B1 (en) 2016-05-10 2017-08-08 Fuji Electric Co., Ltd. Semiconductor device
US10008592B1 (en) 2016-12-28 2018-06-26 Fuji Electric Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
EP0966763A1 (en) 1999-12-29
AU6272798A (en) 1998-08-26
DE69828588D1 (de) 2005-02-17
DE69828588T2 (de) 2006-02-09
JP2001511315A (ja) 2001-08-07
WO1998035390A1 (en) 1998-08-13
EP0966763B1 (en) 2005-01-12
ES2236887T3 (es) 2005-07-16
ATE287127T1 (de) 2005-01-15

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