JP2001511315A5 - - Google Patents
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- Publication number
- JP2001511315A5 JP2001511315A5 JP1998534944A JP53494498A JP2001511315A5 JP 2001511315 A5 JP2001511315 A5 JP 2001511315A5 JP 1998534944 A JP1998534944 A JP 1998534944A JP 53494498 A JP53494498 A JP 53494498A JP 2001511315 A5 JP2001511315 A5 JP 2001511315A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/797,535 US6180958B1 (en) | 1997-02-07 | 1997-02-07 | Structure for increasing the maximum voltage of silicon carbide power transistors |
| US08/797,535 | 1997-02-07 | ||
| US08/795,135 | 1997-02-07 | ||
| US08/795,135 US6570185B1 (en) | 1997-02-07 | 1997-02-07 | Structure to reduce the on-resistance of power transistors |
| PCT/US1998/002384 WO1998035390A1 (en) | 1997-02-07 | 1998-02-06 | Structure for increasing the maximum voltage of silicon carbide power transistors |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001511315A JP2001511315A (ja) | 2001-08-07 |
| JP2001511315A5 true JP2001511315A5 (enExample) | 2005-10-06 |
| JP5054255B2 JP5054255B2 (ja) | 2012-10-24 |
Family
ID=27121597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53494498A Expired - Lifetime JP5054255B2 (ja) | 1997-02-07 | 1998-02-06 | シリコン・カーバイド・パワー・トランジスタの最大電圧を増大させるための構造 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0966763B1 (enExample) |
| JP (1) | JP5054255B2 (enExample) |
| AT (1) | ATE287127T1 (enExample) |
| AU (1) | AU6272798A (enExample) |
| DE (1) | DE69828588T2 (enExample) |
| ES (1) | ES2236887T3 (enExample) |
| WO (1) | WO1998035390A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3716490B2 (ja) | 1996-04-05 | 2005-11-16 | トヨタ自動車株式会社 | 制動力制御装置 |
| US6283561B1 (en) | 1997-03-06 | 2001-09-04 | Toyota Jidosha Kabushiki Kaisha | Braking force controller |
| US6313482B1 (en) | 1999-05-17 | 2001-11-06 | North Carolina State University | Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein |
| US6392273B1 (en) * | 2000-01-14 | 2002-05-21 | Rockwell Science Center, Llc | Trench insulated-gate bipolar transistor with improved safe-operating-area |
| JP4738562B2 (ja) * | 2000-03-15 | 2011-08-03 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP4865166B2 (ja) * | 2001-08-30 | 2012-02-01 | 新電元工業株式会社 | トランジスタの製造方法、ダイオードの製造方法 |
| SE525574C2 (sv) * | 2002-08-30 | 2005-03-15 | Okmetic Oyj | Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter |
| JP4564362B2 (ja) * | 2004-01-23 | 2010-10-20 | 株式会社東芝 | 半導体装置 |
| GB0417749D0 (en) * | 2004-08-10 | 2004-09-08 | Eco Semiconductors Ltd | Improved bipolar MOSFET devices and methods for their use |
| JP4802542B2 (ja) * | 2005-04-19 | 2011-10-26 | 株式会社デンソー | 炭化珪素半導体装置 |
| JP2008016747A (ja) * | 2006-07-10 | 2008-01-24 | Fuji Electric Holdings Co Ltd | トレンチｍｏｓ型炭化珪素半導体装置およびその製造方法 |
| JP5444608B2 (ja) * | 2007-11-07 | 2014-03-19 | 富士電機株式会社 | 半導体装置 |
| JP4640436B2 (ja) * | 2008-04-14 | 2011-03-02 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| CN103262248B (zh) * | 2010-12-10 | 2016-07-13 | 三菱电机株式会社 | 半导体装置及其制造方法 |
| JP6197995B2 (ja) | 2013-08-23 | 2017-09-20 | 富士電機株式会社 | ワイドバンドギャップ絶縁ゲート型半導体装置 |
| WO2016047438A1 (ja) | 2014-09-26 | 2016-03-31 | 三菱電機株式会社 | 半導体装置 |
| WO2016120053A1 (en) * | 2015-01-27 | 2016-08-04 | Abb Technology Ag | Insulated gate power semiconductor device and method for manufacturing such a device |
| US10229969B2 (en) | 2015-06-09 | 2019-03-12 | Mitsubishi Electric Corporation | Power semiconductor device |
| CN108140674B (zh) | 2015-10-16 | 2021-02-19 | 三菱电机株式会社 | 半导体装置 |
| JP6532549B2 (ja) | 2016-02-09 | 2019-06-19 | 三菱電機株式会社 | 半導体装置 |
| US9728599B1 (en) | 2016-05-10 | 2017-08-08 | Fuji Electric Co., Ltd. | Semiconductor device |
| JP6855793B2 (ja) | 2016-12-28 | 2021-04-07 | 富士電機株式会社 | 半導体装置 |
| JP7067021B2 (ja) | 2017-11-07 | 2022-05-16 | 富士電機株式会社 | 絶縁ゲート型半導体装置及びその製造方法 |
| GB2572442A (en) * | 2018-03-29 | 2019-10-02 | Cambridge Entpr Ltd | Power semiconductor device with a double gate structure |
| US20250098208A1 (en) * | 2023-09-19 | 2025-03-20 | Ge Aviation Systems Llc | Radiation hardened semicondcutor power device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4941026A (en) * | 1986-12-05 | 1990-07-10 | General Electric Company | Semiconductor devices exhibiting minimum on-resistance |
| JPH0783118B2 (ja) * | 1988-06-08 | 1995-09-06 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US5168331A (en) * | 1991-01-31 | 1992-12-01 | Siliconix Incorporated | Power metal-oxide-semiconductor field effect transistor |
| JP2682272B2 (ja) * | 1991-06-27 | 1997-11-26 | 三菱電機株式会社 | 絶縁ゲート型トランジスタ |
| US5233215A (en) * | 1992-06-08 | 1993-08-03 | North Carolina State University At Raleigh | Silicon carbide power MOSFET with floating field ring and floating field plate |
| JP2883501B2 (ja) * | 1992-09-09 | 1999-04-19 | 三菱電機株式会社 | トレンチ絶縁ゲート型バイポーラトランジスタおよびその製造方法 |
| US5506421A (en) * | 1992-11-24 | 1996-04-09 | Cree Research, Inc. | Power MOSFET in silicon carbide |
| US5488236A (en) * | 1994-05-26 | 1996-01-30 | North Carolina State University | Latch-up resistant bipolar transistor with trench IGFET and buried collector |
| US5688725A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance |
-
1998
- 1998-02-06 JP JP53494498A patent/JP5054255B2/ja not_active Expired - Lifetime
- 1998-02-06 DE DE69828588T patent/DE69828588T2/de not_active Expired - Lifetime
- 1998-02-06 AU AU62727/98A patent/AU6272798A/en not_active Abandoned
- 1998-02-06 ES ES98904992T patent/ES2236887T3/es not_active Expired - Lifetime
- 1998-02-06 EP EP98904992A patent/EP0966763B1/en not_active Expired - Lifetime
- 1998-02-06 WO PCT/US1998/002384 patent/WO1998035390A1/en not_active Ceased
- 1998-02-06 AT AT98904992T patent/ATE287127T1/de not_active IP Right Cessation