AU6272798A - Structure for increasing the maximum voltage of silicon carbide power transistors - Google Patents
Structure for increasing the maximum voltage of silicon carbide power transistorsInfo
- Publication number
- AU6272798A AU6272798A AU62727/98A AU6272798A AU6272798A AU 6272798 A AU6272798 A AU 6272798A AU 62727/98 A AU62727/98 A AU 62727/98A AU 6272798 A AU6272798 A AU 6272798A AU 6272798 A AU6272798 A AU 6272798A
- Authority
- AU
- Australia
- Prior art keywords
- silicon carbide
- maximum voltage
- transistor
- increasing
- insulated gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 2
- 230000001681 protective effect Effects 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000000593 degrading effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
- H10D62/107—Buried supplementary regions, e.g. buried guard rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08797535 | 1997-02-07 | ||
| US08/795,135 US6570185B1 (en) | 1997-02-07 | 1997-02-07 | Structure to reduce the on-resistance of power transistors |
| US08795135 | 1997-02-07 | ||
| US08/797,535 US6180958B1 (en) | 1997-02-07 | 1997-02-07 | Structure for increasing the maximum voltage of silicon carbide power transistors |
| PCT/US1998/002384 WO1998035390A1 (en) | 1997-02-07 | 1998-02-06 | Structure for increasing the maximum voltage of silicon carbide power transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU6272798A true AU6272798A (en) | 1998-08-26 |
Family
ID=27121597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU62727/98A Abandoned AU6272798A (en) | 1997-02-07 | 1998-02-06 | Structure for increasing the maximum voltage of silicon carbide power transistors |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0966763B1 (enExample) |
| JP (1) | JP5054255B2 (enExample) |
| AT (1) | ATE287127T1 (enExample) |
| AU (1) | AU6272798A (enExample) |
| DE (1) | DE69828588T2 (enExample) |
| ES (1) | ES2236887T3 (enExample) |
| WO (1) | WO1998035390A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3716490B2 (ja) | 1996-04-05 | 2005-11-16 | トヨタ自動車株式会社 | 制動力制御装置 |
| DE69836319T2 (de) | 1997-03-06 | 2007-06-21 | Toyota Jidosha Kabushiki Kaisha, Toyota | Bremskraftsteuergerät |
| US6313482B1 (en) * | 1999-05-17 | 2001-11-06 | North Carolina State University | Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein |
| US6392273B1 (en) * | 2000-01-14 | 2002-05-21 | Rockwell Science Center, Llc | Trench insulated-gate bipolar transistor with improved safe-operating-area |
| JP4738562B2 (ja) * | 2000-03-15 | 2011-08-03 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP4865166B2 (ja) * | 2001-08-30 | 2012-02-01 | 新電元工業株式会社 | トランジスタの製造方法、ダイオードの製造方法 |
| SE525574C2 (sv) * | 2002-08-30 | 2005-03-15 | Okmetic Oyj | Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter |
| JP4564362B2 (ja) * | 2004-01-23 | 2010-10-20 | 株式会社東芝 | 半導体装置 |
| GB0417749D0 (en) * | 2004-08-10 | 2004-09-08 | Eco Semiconductors Ltd | Improved bipolar MOSFET devices and methods for their use |
| JP4802542B2 (ja) * | 2005-04-19 | 2011-10-26 | 株式会社デンソー | 炭化珪素半導体装置 |
| JP2008016747A (ja) * | 2006-07-10 | 2008-01-24 | Fuji Electric Holdings Co Ltd | トレンチｍｏｓ型炭化珪素半導体装置およびその製造方法 |
| JP5444608B2 (ja) * | 2007-11-07 | 2014-03-19 | 富士電機株式会社 | 半導体装置 |
| JP4640436B2 (ja) * | 2008-04-14 | 2011-03-02 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| US9224860B2 (en) * | 2010-12-10 | 2015-12-29 | Mitsubishi Electric Corporation | Trench-gate type semiconductor device and manufacturing method therefor |
| JP6197995B2 (ja) | 2013-08-23 | 2017-09-20 | 富士電機株式会社 | ワイドバンドギャップ絶縁ゲート型半導体装置 |
| DE112015004374B4 (de) | 2014-09-26 | 2019-02-14 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
| CN107251198B (zh) * | 2015-01-27 | 2020-08-14 | Abb电网瑞士股份公司 | 绝缘栅功率半导体装置以及用于制造这种装置的方法 |
| WO2016199546A1 (ja) | 2015-06-09 | 2016-12-15 | 三菱電機株式会社 | 電力用半導体装置 |
| DE112016004718B4 (de) | 2015-10-16 | 2022-12-08 | Mitsubishi Electric Corporation | Halbleitereinheit |
| CN108604598B (zh) | 2016-02-09 | 2021-04-09 | 三菱电机株式会社 | 半导体装置 |
| US9728599B1 (en) | 2016-05-10 | 2017-08-08 | Fuji Electric Co., Ltd. | Semiconductor device |
| JP6855793B2 (ja) | 2016-12-28 | 2021-04-07 | 富士電機株式会社 | 半導体装置 |
| JP7067021B2 (ja) | 2017-11-07 | 2022-05-16 | 富士電機株式会社 | 絶縁ゲート型半導体装置及びその製造方法 |
| GB2572442A (en) * | 2018-03-29 | 2019-10-02 | Cambridge Entpr Ltd | Power semiconductor device with a double gate structure |
| US20250098208A1 (en) * | 2023-09-19 | 2025-03-20 | Ge Aviation Systems Llc | Radiation hardened semicondcutor power device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4941026A (en) * | 1986-12-05 | 1990-07-10 | General Electric Company | Semiconductor devices exhibiting minimum on-resistance |
| JPH0783118B2 (ja) * | 1988-06-08 | 1995-09-06 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US5168331A (en) * | 1991-01-31 | 1992-12-01 | Siliconix Incorporated | Power metal-oxide-semiconductor field effect transistor |
| JP2682272B2 (ja) * | 1991-06-27 | 1997-11-26 | 三菱電機株式会社 | 絶縁ゲート型トランジスタ |
| US5233215A (en) * | 1992-06-08 | 1993-08-03 | North Carolina State University At Raleigh | Silicon carbide power MOSFET with floating field ring and floating field plate |
| JP2883501B2 (ja) * | 1992-09-09 | 1999-04-19 | 三菱電機株式会社 | トレンチ絶縁ゲート型バイポーラトランジスタおよびその製造方法 |
| US5506421A (en) * | 1992-11-24 | 1996-04-09 | Cree Research, Inc. | Power MOSFET in silicon carbide |
| US5488236A (en) * | 1994-05-26 | 1996-01-30 | North Carolina State University | Latch-up resistant bipolar transistor with trench IGFET and buried collector |
| US5688725A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance |
-
1998
- 1998-02-06 AT AT98904992T patent/ATE287127T1/de not_active IP Right Cessation
- 1998-02-06 WO PCT/US1998/002384 patent/WO1998035390A1/en not_active Ceased
- 1998-02-06 AU AU62727/98A patent/AU6272798A/en not_active Abandoned
- 1998-02-06 ES ES98904992T patent/ES2236887T3/es not_active Expired - Lifetime
- 1998-02-06 DE DE69828588T patent/DE69828588T2/de not_active Expired - Lifetime
- 1998-02-06 JP JP53494498A patent/JP5054255B2/ja not_active Expired - Lifetime
- 1998-02-06 EP EP98904992A patent/EP0966763B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0966763B1 (en) | 2005-01-12 |
| ES2236887T3 (es) | 2005-07-16 |
| DE69828588T2 (de) | 2006-02-09 |
| WO1998035390A1 (en) | 1998-08-13 |
| EP0966763A1 (en) | 1999-12-29 |
| DE69828588D1 (de) | 2005-02-17 |
| JP5054255B2 (ja) | 2012-10-24 |
| ATE287127T1 (de) | 2005-01-15 |
| JP2001511315A (ja) | 2001-08-07 |
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