DE69806193D1 - Kühlkörpermaterial für Halbleiterbauelemente und Verfahren zu dessen Herstellung - Google Patents

Kühlkörpermaterial für Halbleiterbauelemente und Verfahren zu dessen Herstellung

Info

Publication number
DE69806193D1
DE69806193D1 DE69806193T DE69806193T DE69806193D1 DE 69806193 D1 DE69806193 D1 DE 69806193D1 DE 69806193 T DE69806193 T DE 69806193T DE 69806193 T DE69806193 T DE 69806193T DE 69806193 D1 DE69806193 D1 DE 69806193D1
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor devices
heatsink material
heatsink
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69806193T
Other languages
English (en)
Other versions
DE69806193T2 (de
Inventor
Yoshiki Nishibayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69806193D1 publication Critical patent/DE69806193D1/de
Application granted granted Critical
Publication of DE69806193T2 publication Critical patent/DE69806193T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/252—Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
DE69806193T 1997-02-06 1998-02-06 Kühlkörpermaterial für Halbleiterbauelemente und Verfahren zu dessen Herstellung Expired - Lifetime DE69806193T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02389197A JP3617232B2 (ja) 1997-02-06 1997-02-06 半導体用ヒートシンクおよびその製造方法ならびにそれを用いた半導体パッケージ

Publications (2)

Publication Number Publication Date
DE69806193D1 true DE69806193D1 (de) 2002-08-01
DE69806193T2 DE69806193T2 (de) 2002-11-21

Family

ID=12123083

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69806193T Expired - Lifetime DE69806193T2 (de) 1997-02-06 1998-02-06 Kühlkörpermaterial für Halbleiterbauelemente und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
US (2) US6171691B1 (de)
EP (1) EP0859408B1 (de)
JP (1) JP3617232B2 (de)
DE (1) DE69806193T2 (de)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3617232B2 (ja) 1997-02-06 2005-02-02 住友電気工業株式会社 半導体用ヒートシンクおよびその製造方法ならびにそれを用いた半導体パッケージ
JP3893681B2 (ja) * 1997-08-19 2007-03-14 住友電気工業株式会社 半導体用ヒートシンクおよびその製造方法
CN1178297C (zh) * 1999-12-24 2004-12-01 日本碍子株式会社 散热材料及其制造方法
JP2001217359A (ja) * 2000-01-31 2001-08-10 Shinko Electric Ind Co Ltd 放熱用フィン及びその製造方法並びに半導体装置
US7265062B2 (en) * 2000-04-04 2007-09-04 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
JP2002080280A (ja) 2000-06-23 2002-03-19 Sumitomo Electric Ind Ltd 高熱伝導性複合材料及びその製造方法
DE20016316U1 (de) * 2000-09-19 2001-04-05 Boston Cooltec Corp Kühlkörper zur Kühlung insbesondere elektronischer Bauelemente
RU2206502C2 (ru) 2000-11-21 2003-06-20 Акционерное общество закрытого типа "Карбид" Композиционный материал
US6460598B1 (en) * 2000-11-27 2002-10-08 Ceramic Process Systems Corporation Heat exchanger cast in metal matrix composite and method of making the same
US6815052B2 (en) 2000-12-01 2004-11-09 P1 Diamond, Inc. Filled diamond foam material and method for forming same
GB2395360B (en) * 2001-10-26 2005-03-16 Ngk Insulators Ltd Heat sink material
JP2003201528A (ja) * 2001-10-26 2003-07-18 Ngk Insulators Ltd ヒートシンク材
EP1452614B1 (de) 2001-11-09 2017-12-27 Sumitomo Electric Industries, Ltd. Gesinterter diamant mit hoher wärmeleitfähigkeit
US20030168730A1 (en) * 2002-03-08 2003-09-11 Howard Davidson Carbon foam heat exchanger for integrated circuit
US7575043B2 (en) * 2002-04-29 2009-08-18 Kauppila Richard W Cooling arrangement for conveyors and other applications
GB0223321D0 (en) * 2002-10-08 2002-11-13 Element Six Ltd Heat spreader
US20050189647A1 (en) * 2002-10-11 2005-09-01 Chien-Min Sung Carbonaceous composite heat spreader and associated methods
AU2003284065A1 (en) 2002-10-11 2005-05-05 Chien-Min Sung Carbonaceous heat spreader and associated methods
US20060113546A1 (en) * 2002-10-11 2006-06-01 Chien-Min Sung Diamond composite heat spreaders having low thermal mismatch stress and associated methods
US7173334B2 (en) * 2002-10-11 2007-02-06 Chien-Min Sung Diamond composite heat spreader and associated methods
JP2004146413A (ja) * 2002-10-22 2004-05-20 Sumitomo Electric Ind Ltd 半導体素子収納用パッケージおよび半導体装置
US6727117B1 (en) 2002-11-07 2004-04-27 Kyocera America, Inc. Semiconductor substrate having copper/diamond composite material and method of making same
JP2004200346A (ja) * 2002-12-18 2004-07-15 Sumitomo Electric Ind Ltd 半導体素子収納用パッケージ、その製造方法及び半導体装置
US7298046B2 (en) 2003-01-10 2007-11-20 Kyocera America, Inc. Semiconductor package having non-ceramic based window frame
AT7382U1 (de) * 2003-03-11 2005-02-25 Plansee Ag Wärmesenke mit hoher wärmeleitfähigkeit
US7215545B1 (en) 2003-05-01 2007-05-08 Saeed Moghaddam Liquid cooled diamond bearing heat sink
US7279023B2 (en) * 2003-10-02 2007-10-09 Materials And Electrochemical Research (Mer) Corporation High thermal conductivity metal matrix composites
US7384693B2 (en) * 2004-04-28 2008-06-10 Intel Corporation Diamond-like carbon films with low dielectric constant and high mechanical strength
AT7492U1 (de) * 2004-06-01 2005-04-25 Ceratizit Austria Gmbh Verschleissteil aus einem diamanthaltigen verbundwerkstoff
TWI290012B (en) * 2005-03-03 2007-11-11 Mitac Technology Corp Printed circuit board structure and manufacturing method thereof
US7360581B2 (en) * 2005-11-07 2008-04-22 3M Innovative Properties Company Structured thermal transfer article
US8178893B2 (en) 2005-12-28 2012-05-15 A. L. M. T. Corp. Semiconductor element mounting substrate, semiconductor device using the same, and method for manufacturing semiconductor element mounting substrate
US20070199681A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Dissipation Heat Pipe Structure and Manufacturing Method Thereof
US20080023665A1 (en) * 2006-07-25 2008-01-31 Weiser Martin W Thermal interconnect and interface materials, methods of production and uses thereof
JP2008248324A (ja) * 2007-03-30 2008-10-16 Sps Syntex Inc ダイヤモンド粒子分散型金属基複合材料及びその製造方法
US7791188B2 (en) 2007-06-18 2010-09-07 Chien-Min Sung Heat spreader having single layer of diamond particles and associated methods
AT505491B1 (de) * 2007-07-10 2010-06-15 Electrovac Ag Verbundwerkstoff
SE532992C2 (sv) * 2007-11-08 2010-06-08 Alfa Laval Corp Ab Förfarande för framställning av en diamantkomposit, grönkropp, diamantkomposit samt användning av diamantkompositen
WO2010027504A1 (en) * 2008-09-08 2010-03-11 Materials And Electrochemical Research (Mer) Corporation Machinable metal/diamond metal matrix composite compound structure and method of making same
US20100139885A1 (en) * 2008-12-09 2010-06-10 Renewable Thermodynamics, Llc Sintered diamond heat exchanger apparatus
WO2011049479A1 (en) * 2009-10-21 2011-04-28 Andrey Mikhailovich Abyzov Composite material having high thermal conductivity and process of fabricating same
KR20110085481A (ko) * 2010-01-20 2011-07-27 삼성전자주식회사 적층 반도체 패키지
JP5484111B2 (ja) 2010-02-08 2014-05-07 株式会社アライドマテリアル 半導体素子搭載部材とその製造方法ならびに半導体装置
US9006086B2 (en) 2010-09-21 2015-04-14 Chien-Min Sung Stress regulated semiconductor devices and associated methods
WO2012040373A2 (en) 2010-09-21 2012-03-29 Ritedia Corporation Diamond particle mololayer heat spreaders and associated methods
US8778784B2 (en) 2010-09-21 2014-07-15 Ritedia Corporation Stress regulated semiconductor devices and associated methods
DE102011018607A1 (de) 2011-04-21 2012-10-25 H.C. Starck Gmbh Granulat zur Herstellung von Verbundbauteilen durch Spritzgiessen
DE102011079471B4 (de) * 2011-07-20 2024-05-29 Trumpf Laser Gmbh Verfahren zur Bildung eines Kohlenstoff-Metall-Verbundwerkstoffs
JP5896400B2 (ja) * 2011-11-25 2016-03-30 トーメイダイヤ株式会社 ダイヤモンド含有ヒートシンク材及びその製法
WO2013116107A1 (en) * 2012-02-01 2013-08-08 Baker Hughes Incorporated Thermoelectric devices using sintered bonding
US9651236B2 (en) * 2014-01-31 2017-05-16 Christie Digital Systems Usa, Inc. Light emitting device with a heat sink composed of two materials
CN106688092B (zh) 2014-09-02 2019-09-24 联合材料公司 散热部件及其制造方法
JP5807935B1 (ja) 2014-10-09 2015-11-10 株式会社半導体熱研究所 放熱基板と、それを使用した半導体用モジュール
WO2017222471A1 (en) 2016-06-24 2017-12-28 Agency For Science, Technology And Research Semiconductor package and method of forming the same
WO2019159694A1 (ja) * 2018-02-14 2019-08-22 住友電気工業株式会社 複合部材、及び複合部材の製造方法
CN111742073B (zh) * 2018-02-21 2022-08-02 住友电气工业株式会社 复合材料和复合材料的制造方法
CN113206200B (zh) * 2020-04-17 2023-04-07 广东聚华印刷显示技术有限公司 薄膜封装结构、薄膜封装方法及光电器件

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3929432A (en) * 1970-05-29 1975-12-30 De Beers Ind Diamond Diamond particle having a composite coating of titanium and a metal layer
US4024675A (en) * 1974-05-14 1977-05-24 Jury Vladimirovich Naidich Method of producing aggregated abrasive grains
JPS62249462A (ja) 1986-04-23 1987-10-30 Hitachi Vlsi Eng Corp 半導体装置
JPS63262432A (ja) * 1987-04-17 1988-10-28 Sumitomo Electric Ind Ltd 硬質焼結体の製造方法
JPH0215977A (ja) 1988-06-30 1990-01-19 Nisshin Daiyamondo Kk ダイヤモンド砥石とその製造方法
US5008737A (en) 1988-10-11 1991-04-16 Amoco Corporation Diamond composite heat sink for use with semiconductor devices
US5130771A (en) * 1988-10-11 1992-07-14 Amoco Corporation Diamond composite heat sink for use with semiconductor devices
JPH039552A (ja) 1989-06-07 1991-01-17 Idemitsu Petrochem Co Ltd 高熱伝導性部材
JPH04231436A (ja) 1990-06-01 1992-08-20 United Technol Corp <Utc> ダイヤモンド含有材料及びダイヤモンド含有材料製品の製造方法
US5045972A (en) 1990-08-27 1991-09-03 The Standard Oil Company High thermal conductivity metal matrix composite
US5120495A (en) * 1990-08-27 1992-06-09 The Standard Oil Company High thermal conductivity metal matrix composite
JPH05291444A (ja) 1992-04-13 1993-11-05 Sumitomo Electric Ind Ltd 放熱基板
JPH05347370A (ja) 1992-06-15 1993-12-27 Seiko Epson Corp 放熱部材
JPH06326432A (ja) 1993-05-13 1994-11-25 Denki Kagaku Kogyo Kk 混成集積回路用基板及びその製造方法
US6264882B1 (en) * 1994-05-20 2001-07-24 The Regents Of The University Of California Process for fabricating composite material having high thermal conductivity
EP0717125A1 (de) * 1994-12-15 1996-06-19 General Electric Company Bindung von Diamant mit einem Substrat
JP3617232B2 (ja) 1997-02-06 2005-02-02 住友電気工業株式会社 半導体用ヒートシンクおよびその製造方法ならびにそれを用いた半導体パッケージ

Also Published As

Publication number Publication date
EP0859408A3 (de) 1998-09-23
US6270848B1 (en) 2001-08-07
DE69806193T2 (de) 2002-11-21
EP0859408A2 (de) 1998-08-19
JPH10223812A (ja) 1998-08-21
JP3617232B2 (ja) 2005-02-02
US6171691B1 (en) 2001-01-09
EP0859408B1 (de) 2002-06-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)