JP5896400B2 - ダイヤモンド含有ヒートシンク材及びその製法 - Google Patents
ダイヤモンド含有ヒートシンク材及びその製法 Download PDFInfo
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- JP5896400B2 JP5896400B2 JP2011257415A JP2011257415A JP5896400B2 JP 5896400 B2 JP5896400 B2 JP 5896400B2 JP 2011257415 A JP2011257415 A JP 2011257415A JP 2011257415 A JP2011257415 A JP 2011257415A JP 5896400 B2 JP5896400 B2 JP 5896400B2
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- diamond
- heat sink
- diamond particles
- metal
- sink material
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- 229910003460 diamond Inorganic materials 0.000 title claims description 73
- 239000010432 diamond Substances 0.000 title claims description 72
- 239000000463 material Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000002245 particle Substances 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 239000010410 layer Substances 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 15
- 238000005245 sintering Methods 0.000 claims description 15
- 239000007769 metal material Substances 0.000 claims description 12
- 239000011247 coating layer Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 239000011812 mixed powder Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 20
- 239000010949 copper Substances 0.000 description 18
- 150000003839 salts Chemical class 0.000 description 12
- 239000010936 titanium Substances 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 150000001247 metal acetylides Chemical class 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- -1 titanium carbide Chemical compound 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000004438 BET method Methods 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- MPUPIFAINMLUSG-UHFFFAOYSA-L copper;formaldehyde;sulfate Chemical compound [Cu+2].O=C.[O-]S([O-])(=O)=O MPUPIFAINMLUSG-UHFFFAOYSA-L 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- BUKHSQBUKZIMLB-UHFFFAOYSA-L potassium;sodium;dichloride Chemical compound [Na+].[Cl-].[Cl-].[K+] BUKHSQBUKZIMLB-UHFFFAOYSA-L 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Powder Metallurgy (AREA)
Description
(1) 整粒されたダイヤモンド粒子の全表面に、パイロゾル法によって金属炭化物層を形成することによって被覆ダイヤモンド粒子を得る工程、
(2) 前記被覆ダイヤモンド粒子とマトリックス金属材の粉末とを密に混合して混合粉とし、焼結反応容器内に充填する工程、
(3) 前記混合粉を還元性雰囲気中で加熱することによって酸素を除去する工程、及び
(4) 前記反応容器をマトリックス金属材の融点以上の加熱温度及び100MPa以上の焼結圧力に供し、該金属材を溶融して被覆ダイヤモンド粒子間の空隙に流入・充填し、金属炭化物層を介してダイヤモンド粒子及び金属材を一体化させる工程。
次に本発明を実施例によって説明する。
Claims (4)
- 平均粒径が100μm以下であり、かつ、各粒子の全表面に均一厚さの金属炭化物層を有する被覆ダイヤモンド粒子を、主成分としてCu又はAgを含有するマトリックス金属材中に、該金属材と密に接触させて分散させたヒートシンク材の製造方法であって、
(1) 整粒されたダイヤモンド粒子の全表面に、パイロゾル法によって金属炭化物層を形成することによって被覆ダイヤモンド粒子を得る工程、
(2) 上記被覆ダイヤモンド粒子とマトリックス金属材の粉末とを密に混合して混合粉とし、焼結反応容器内に充填する工程、
(3) 上記混合粉を還元性雰囲気中で加熱することによって酸素を除去する工程、及び
(4) 上記反応容器をマトリックス金属材の融点以上の加熱温度及び100MPa以上の焼結圧力に供し、該金属材を溶融して被覆ダイヤモンド粒子間の空隙に流入・充填し、金属炭化物層を介してダイヤモンド粒子及び金属材を一体化させる工程
を含むことを特徴とするヒートシンク材の製造方法。 - 前記(4)の工程において、焼結圧力が加熱温度におけるダイヤモンドの熱力学的安定領域内の圧力である、請求項1に記載のヒートシンク材の製造方法。
- 前記(3)の工程を水素雰囲気中、600℃以上800℃以下の温度にて行う、請求項1に記載のヒートシンク材の製造方法。
- 前記(1)の工程において、被覆ダイヤモンド粒子の表面にさらに金属Cu被覆層を形成する、請求項1に記載のヒートシンク材の製造方法。
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JP2011257415A JP5896400B2 (ja) | 2011-11-25 | 2011-11-25 | ダイヤモンド含有ヒートシンク材及びその製法 |
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JP2011257415A JP5896400B2 (ja) | 2011-11-25 | 2011-11-25 | ダイヤモンド含有ヒートシンク材及びその製法 |
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JP5896400B2 true JP5896400B2 (ja) | 2016-03-30 |
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Cited By (1)
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CN110144506A (zh) * | 2019-07-04 | 2019-08-20 | 广西大学 | 一种金刚石铜基复合材料的制备方法 |
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EP3190198B1 (en) * | 2014-09-02 | 2019-11-06 | A.L.M.T. Corp. | Heat radiating member comprising diamond composite material |
JP6257575B2 (ja) * | 2015-11-25 | 2018-01-10 | 株式会社アライドマテリアル | 半導体パッケージ、及び半導体装置 |
CN105921753A (zh) * | 2016-05-06 | 2016-09-07 | 西安工业大学 | 金刚石-铜复合材料制备复杂形状近终形零件的方法 |
WO2019163721A1 (ja) * | 2018-02-21 | 2019-08-29 | 住友電気工業株式会社 | 複合材料、及び複合材料の製造方法 |
CN113614266B (zh) * | 2019-03-29 | 2023-04-04 | 住友电气工业株式会社 | 复合材料 |
CN114717441B (zh) * | 2022-04-26 | 2023-01-13 | 河南黄河旋风股份有限公司 | 一种低成本制备低密度高热导率的金刚石/铜复合材料的方法 |
CN114875260B (zh) * | 2022-05-26 | 2023-01-24 | 邵阳市东昇超硬材料有限公司 | 一种金刚石复合材料的制备方法 |
CN116550975B (zh) * | 2023-07-04 | 2023-09-26 | 赣州金顺科技有限公司 | 一种金刚石/铜复合材料制备方法 |
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JP2798263B2 (ja) * | 1989-03-24 | 1998-09-17 | 猛雄 沖 | 難焼結性粉末の焼結体、その砥粒及び砥石、並びにそれらの製法 |
JP3960484B2 (ja) * | 1993-08-12 | 2007-08-15 | 独立行政法人産業技術総合研究所 | 被覆ダイヤモンド焼結体及びその製造法 |
JP3617232B2 (ja) * | 1997-02-06 | 2005-02-02 | 住友電気工業株式会社 | 半導体用ヒートシンクおよびその製造方法ならびにそれを用いた半導体パッケージ |
US6727117B1 (en) * | 2002-11-07 | 2004-04-27 | Kyocera America, Inc. | Semiconductor substrate having copper/diamond composite material and method of making same |
JP2011046555A (ja) * | 2009-08-26 | 2011-03-10 | Tomei Diamond Co Ltd | 微細ダイヤモンド粒子焼結体及びその製造方法 |
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CN110144506A (zh) * | 2019-07-04 | 2019-08-20 | 广西大学 | 一种金刚石铜基复合材料的制备方法 |
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