DE69820184D1 - Lichtemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung - Google Patents

Lichtemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung

Info

Publication number
DE69820184D1
DE69820184D1 DE69820184T DE69820184T DE69820184D1 DE 69820184 D1 DE69820184 D1 DE 69820184D1 DE 69820184 T DE69820184 T DE 69820184T DE 69820184 T DE69820184 T DE 69820184T DE 69820184 D1 DE69820184 D1 DE 69820184D1
Authority
DE
Germany
Prior art keywords
production
light
semiconductor component
emitting semiconductor
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69820184T
Other languages
English (en)
Other versions
DE69820184T2 (de
Inventor
Kohsuke Nishimura
Yasuyuki Nagao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Application granted granted Critical
Publication of DE69820184D1 publication Critical patent/DE69820184D1/de
Publication of DE69820184T2 publication Critical patent/DE69820184T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
    • H01L33/346—Materials of the light emitting region containing only elements of group IV of the periodic system containing porous silicon
DE69820184T 1997-09-11 1998-09-10 Lichtemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung Expired - Fee Related DE69820184T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24720597 1997-09-11
JP24720597 1997-09-11

Publications (2)

Publication Number Publication Date
DE69820184D1 true DE69820184D1 (de) 2004-01-15
DE69820184T2 DE69820184T2 (de) 2004-10-14

Family

ID=17160021

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69820184T Expired - Fee Related DE69820184T2 (de) 1997-09-11 1998-09-10 Lichtemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung

Country Status (3)

Country Link
US (2) US6037612A (de)
EP (1) EP0902486B1 (de)
DE (1) DE69820184T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100828351B1 (ko) * 2001-04-17 2008-05-08 삼성전자주식회사 발광 소자 및 이를 적용한 디스플레이 장치
US6697403B2 (en) * 2001-04-17 2004-02-24 Samsung Electronics Co., Ltd. Light-emitting device and light-emitting apparatus using the same
US6599808B2 (en) * 2001-09-12 2003-07-29 Intel Corporation Method and device for on-chip decoupling capacitor using nanostructures as bottom electrode
US6891202B2 (en) * 2001-12-14 2005-05-10 Infinera Corporation Oxygen-doped Al-containing current blocking layers in active semiconductor devices
KR100446622B1 (ko) * 2002-01-10 2004-09-04 삼성전자주식회사 실리콘 광소자 및 이를 적용한 발광 디바이스 장치
CN2686020Y (zh) * 2004-01-19 2005-03-16 上海三思科技发展有限公司 一种高亮区比例的led点阵显示模块
DE102004031135A1 (de) * 2004-06-28 2006-01-19 Infineon Technologies Ag Resistives Halbleiterelement basierend auf einem Festkörperionenleiter
KR20070104158A (ko) * 2006-04-21 2007-10-25 삼성전자주식회사 전자소자용 보호막 및 그 제조방법
JP4347328B2 (ja) * 2006-09-12 2009-10-21 株式会社沖データ 半導体装置、ｌｅｄヘッドおよび画像形成装置
TW200919768A (en) * 2007-10-19 2009-05-01 Huga Optotech Inc Semiconductor light-emitting device and method of fabricating the same
KR101478339B1 (ko) * 2008-06-19 2015-01-08 서울바이오시스 주식회사 발광 소자 및 그 제조 방법
JP4454689B1 (ja) * 2009-09-10 2010-04-21 有限会社ナプラ 発光ダイオード、発光装置、照明装置、ディスプレイ及び信号灯
FR2967294B1 (fr) * 2010-11-10 2012-12-07 Commissariat Energie Atomique Procédé de formation d'une structure multicouches
WO2017134438A1 (en) * 2016-02-05 2017-08-10 Bae Systems Plc End effector for a robot
US11355549B2 (en) 2017-12-29 2022-06-07 Lumileds Llc High density interconnect for segmented LEDs
US11164917B1 (en) 2018-09-14 2021-11-02 Apple Inc. Electronic devices with illuminated display borders

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272355A (en) * 1992-05-20 1993-12-21 Spire Corporation Optoelectronic switching and display device with porous silicon
JP3352118B2 (ja) * 1992-08-25 2002-12-03 キヤノン株式会社 半導体装置及びその製造方法
DE4319413C2 (de) * 1993-06-14 1999-06-10 Forschungszentrum Juelich Gmbh Interferenzfilter oder dielektrischer Spiegel

Also Published As

Publication number Publication date
DE69820184T2 (de) 2004-10-14
EP0902486B1 (de) 2003-12-03
US6037612A (en) 2000-03-14
US6403391B1 (en) 2002-06-11
EP0902486A2 (de) 1999-03-17
EP0902486A3 (de) 2000-10-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee