GB2395360B - Heat sink material - Google Patents

Heat sink material

Info

Publication number
GB2395360B
GB2395360B GB0403137A GB0403137A GB2395360B GB 2395360 B GB2395360 B GB 2395360B GB 0403137 A GB0403137 A GB 0403137A GB 0403137 A GB0403137 A GB 0403137A GB 2395360 B GB2395360 B GB 2395360B
Authority
GB
United Kingdom
Prior art keywords
metal
heat sink
furnace
case
press
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0403137A
Other versions
GB2395360A (en
GB0403137D0 (en
Inventor
Shuhei Ishikawa
Tsutomu Mitsui
Hiroyuki Takeuchi
Seija Yasui
Ken Suzuki
Nobuaki Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002272133A external-priority patent/JP2003201528A/en
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of GB0403137D0 publication Critical patent/GB0403137D0/en
Publication of GB2395360A publication Critical patent/GB2395360A/en
Application granted granted Critical
Publication of GB2395360B publication Critical patent/GB2395360B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736Metallic materials
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/85Coating or impregnation with inorganic materials
    • C04B41/88Metals
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C26/00Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0084Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ carbon or graphite as the main non-metallic constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A heat sink suitable for IC chips, having high mechanical strength, is produced by infiltrating metal into pores in a carbon material, giving increased wettability between the heat sink material and plated solder layer covering the surface. The metal can have a low solidification temperature, low level of segregation, high wettability or expansion/inhibited shrinkage on solidification. In one embodiment, a mass of graphite is placed into case 70, which is put into a furnace (fig 6: 60) (fig 8: S301). The space in the furnace is heated, producing a porous sintered graphite body 12 (fig 8: S302). The case containing the porous body is removed from the furnace and put into cavity 80 in press 62 (fig 8: S303). A molten mass 86 of a metal is poured into the case (fig 8: S304), and a punch 84 is inserted into the cavity to press the molten metal 86 into the porous sintered body 12 (fig 8: S305).
GB0403137A 2001-10-26 2002-10-25 Heat sink material Expired - Fee Related GB2395360B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001328954 2001-10-26
JP2002272133A JP2003201528A (en) 2001-10-26 2002-09-18 Heat sink material
GB0224893A GB2385464B (en) 2001-10-26 2002-10-25 Heat sink material

Publications (3)

Publication Number Publication Date
GB0403137D0 GB0403137D0 (en) 2004-03-17
GB2395360A GB2395360A (en) 2004-05-19
GB2395360B true GB2395360B (en) 2005-03-16

Family

ID=32180213

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0403137A Expired - Fee Related GB2395360B (en) 2001-10-26 2002-10-25 Heat sink material

Country Status (1)

Country Link
GB (1) GB2395360B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100446896C (en) * 2006-05-30 2008-12-31 武汉理工大学 Titanium cobalt antimony base thermoelectric semiconductor material preparation method
PL398770A1 (en) * 2012-04-10 2013-01-07 Akademia Górniczo-Hutnicza im. Stanislawa Staszica Method for producing the cast composite zones
CN110125417B (en) * 2019-05-31 2021-09-21 长沙墨科瑞网络科技有限公司 Composite green body and method for additive manufacturing of metal parts using the same

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053195A (en) * 1989-07-19 1991-10-01 Microelectronics And Computer Technology Corp. Bonding amalgam and method of making
US5259436A (en) * 1991-04-08 1993-11-09 Aluminum Company Of America Fabrication of metal matrix composites by vacuum die casting
EP0898310A2 (en) * 1997-08-19 1999-02-24 Sumitomo Electric Industries, Ltd. Heat sink for semiconductors and manufacturing process thereof
JPH11140560A (en) * 1997-11-12 1999-05-25 Denki Kagaku Kogyo Kk Production of composite body
EP0987231A1 (en) * 1998-09-14 2000-03-22 Sumitomo Electric Industries, Ltd. Silicon carbide based composite material and manufacturing method thereof
EP1000915A2 (en) * 1998-11-12 2000-05-17 Denki Kagaku Kogyo Kabushiki Kaisha Silicon carbide composite, method for producing it and heat dissipation device employing it
US6114413A (en) * 1997-07-10 2000-09-05 International Business Machines Corporation Thermally conducting materials and applications for microelectronic packaging
US6270848B1 (en) * 1997-02-06 2001-08-07 Sumitomo Electric Industries, Ltd. Heat sink material for use with semiconductor component and method for fabricating the same, and semiconductor package using the same
EP1143512A2 (en) * 2000-04-05 2001-10-10 The Bergquist Company Method of preparing thermally conductive compounds by liquid metal bridged particle clusters
EP1160860A1 (en) * 1999-12-24 2001-12-05 Ngk Insulators, Ltd. Heat sink material and method of manufacturing the heat sink material
EP1291913A2 (en) * 2001-09-05 2003-03-12 The Bergquist Company Morphing fillers and thermal interface materials

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053195A (en) * 1989-07-19 1991-10-01 Microelectronics And Computer Technology Corp. Bonding amalgam and method of making
US5259436A (en) * 1991-04-08 1993-11-09 Aluminum Company Of America Fabrication of metal matrix composites by vacuum die casting
US6270848B1 (en) * 1997-02-06 2001-08-07 Sumitomo Electric Industries, Ltd. Heat sink material for use with semiconductor component and method for fabricating the same, and semiconductor package using the same
US6114413A (en) * 1997-07-10 2000-09-05 International Business Machines Corporation Thermally conducting materials and applications for microelectronic packaging
EP0898310A2 (en) * 1997-08-19 1999-02-24 Sumitomo Electric Industries, Ltd. Heat sink for semiconductors and manufacturing process thereof
JPH11140560A (en) * 1997-11-12 1999-05-25 Denki Kagaku Kogyo Kk Production of composite body
EP0987231A1 (en) * 1998-09-14 2000-03-22 Sumitomo Electric Industries, Ltd. Silicon carbide based composite material and manufacturing method thereof
EP1000915A2 (en) * 1998-11-12 2000-05-17 Denki Kagaku Kogyo Kabushiki Kaisha Silicon carbide composite, method for producing it and heat dissipation device employing it
EP1160860A1 (en) * 1999-12-24 2001-12-05 Ngk Insulators, Ltd. Heat sink material and method of manufacturing the heat sink material
EP1143512A2 (en) * 2000-04-05 2001-10-10 The Bergquist Company Method of preparing thermally conductive compounds by liquid metal bridged particle clusters
EP1291913A2 (en) * 2001-09-05 2003-03-12 The Bergquist Company Morphing fillers and thermal interface materials

Also Published As

Publication number Publication date
GB2395360A (en) 2004-05-19
GB0403137D0 (en) 2004-03-17

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20161025