JP2001007265A - Substrate with cooling device and preparation thereof - Google Patents
Substrate with cooling device and preparation thereofInfo
- Publication number
- JP2001007265A JP2001007265A JP17489599A JP17489599A JP2001007265A JP 2001007265 A JP2001007265 A JP 2001007265A JP 17489599 A JP17489599 A JP 17489599A JP 17489599 A JP17489599 A JP 17489599A JP 2001007265 A JP2001007265 A JP 2001007265A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- metal
- cooling device
- preform
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体素子あるい
は電子機器の熱除去法に関して、基板及び液体を媒体と
する冷却装置並びにその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for removing heat from a semiconductor device or an electronic device, and more particularly to a cooling apparatus using a substrate and a liquid as a medium, and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来、電子回路から発生する熱を液体状
の冷却媒体に伝熱する場合、回路を搭載する基板と冷却
装置、例えばパイプ、平板状、角型の流路からなる装置
は、個別に製造され、はんだ、ロウ材、樹脂製接着剤あ
るいは伝熱シートを挟んでねじ止めで接合されている。
また、熱発生が多くなるにつれて、回路を搭載する基板
に熱伝導率が高く、熱膨張率がアルミナのそれに近いセ
ラミックスと金属あるいは炭素材と金属からなる複合材
基板が使用されている。2. Description of the Related Art Conventionally, when heat generated from an electronic circuit is transferred to a liquid cooling medium, a substrate on which the circuit is mounted and a cooling device such as a pipe, a flat plate, and a rectangular channel are provided by: It is manufactured individually and joined by screws with solder, brazing material, resin adhesive or heat transfer sheet in between.
Further, as heat generation increases, a substrate on which a circuit is mounted has a high thermal conductivity, and a composite substrate made of ceramic and metal or a carbon material and metal having a thermal expansion coefficient close to that of alumina is used.
【０００３】また、銅、アルミニウムを基板とするもの
には、パイプ等からなる冷却装置を基板にロウ材、はん
だで接合し、金属基板と冷却装置が一体化されたものが
ある。[0003] Further, as a device using copper or aluminum as a substrate, there is a device in which a cooling device such as a pipe is joined to a substrate with a brazing material or solder, and a metal substrate and a cooling device are integrated.
【０００４】[0004]
【発明が解決しようとする課題】金属基板を熱膨張率の
低いセラミックと金属あるいは炭素材と金属からなる複
合材基板にして信頼性を向上する。複合材基板と冷却装
置を一体化することで、冷却能力をあげる。SUMMARY OF THE INVENTION The reliability of a metal substrate is improved by using a composite substrate composed of ceramic and metal or a carbon material and metal having a low coefficient of thermal expansion. The cooling capacity is increased by integrating the composite substrate and the cooling device.
【０００５】複合材基板とすることにより、基板の熱膨
張率を搭載される半導体素子あるいはまた、アルミナ、
窒化アルミニウム製の絶縁回路基板の熱膨張率に近づ
け、界面における熱膨張率差から生じる熱応力を低減
し、特に温度変化から生じる熱疲労による組織破壊によ
るそり、はがれを抑制する。これにより電子装置の信頼
性を向上させることができる。[0005] By using a composite substrate, a semiconductor element having a thermal expansion coefficient of the substrate or alumina,
The coefficient of thermal expansion of the insulated circuit board made of aluminum nitride is approximated to reduce the thermal stress caused by the difference in the coefficient of thermal expansion at the interface. Thereby, the reliability of the electronic device can be improved.
【０００６】低熱膨張率のセラミックと金属あるいは炭
素材と金属からなる複合材基板の製造と冷却装置を熱伝
導率の高い金属で一体化することにより、冷却能力を上
げることが可能である。特に複合材基板製造する場合に
冷却装置を一体で鋳造することにより、複合材基板と冷
却装置を、金属の巣あるいは空隙なく密着することがで
き、冷却能力の向上効果は大きい。[0006] The cooling capacity can be increased by manufacturing a composite substrate composed of ceramic and metal or carbon material and metal having a low coefficient of thermal expansion and integrating the cooling device with a metal having high thermal conductivity. In particular, when manufacturing a composite material substrate, by integrally casting the cooling device, the composite material substrate and the cooling device can be brought into close contact with each other without metal nests or voids, and the effect of improving the cooling capacity is large.
【０００７】２つの基板の間に冷却装置を設置し、その
両面に電子機器を搭載することで電子装置を小型化する
ことができる。By installing a cooling device between two substrates and mounting electronic devices on both sides thereof, the size of the electronic device can be reduced.
【０００８】[0008]
【課題を解決するための手段】炭化珪素、アルミナ、窒
化アルミニウム、窒化珪素の燒結体あるいは炭素の繊維
状あるいは粉の燒結体からなるプリフォーム基板と冷却
装置を金型に入れ、アルミニウムあるいは銅又は、それ
らの合金を溶融し高圧で鋳造する。この工程で、プリフ
ォーム基板の空孔は金属で充填されセラミックあるいは
炭素材と金属からなる複合材基板となり、同時に冷却装
置と複合材基板が一体化する。または、別々に製造され
た複合材基板と冷却装置を金属、例えば、金属ロウ、は
んだあるいは、金属箔で接合する。SUMMARY OF THE INVENTION A preform substrate made of a sintered body of silicon carbide, alumina, aluminum nitride, silicon nitride, or a fibrous or powdered sintered body of carbon and a cooling device are placed in a mold, and aluminum, copper or , The alloys are melted and cast at high pressure. In this step, the holes of the preform substrate are filled with metal to become a composite substrate made of ceramic or carbon material and metal, and at the same time, the cooling device and the composite substrate are integrated. Alternatively, the separately manufactured composite substrate and the cooling device are joined with a metal, for example, a metal braze, a solder, or a metal foil.
【０００９】本発明において、用いられるアルミナ、窒
化アルミニウムのプリフォーム基板材は、粉体、繊維状
あるいはフェルト状の原料とガラス質の燒結材の混合物
を燒結したもので、気孔率は５％以上５０％未満のもの
である。In the present invention, the preform substrate material of alumina or aluminum nitride used is obtained by sintering a mixture of a powdery, fibrous or felt-like raw material and a vitreous sintering material, and has a porosity of 5% or more. It is less than 50%.
【００１０】本発明において、用いられる炭素材のプリ
フォーム基板材は、粉体、繊維状あるいはフェルト状の
原料と樹脂あるいはコールタールピッチ燒結材の混合物
を燒結したもので、気孔率は５％以上５０％未満のもの
である。In the present invention, the carbon preform substrate used is obtained by sintering a mixture of a powdery, fibrous or felt-like raw material and a resin or coal tar pitch sintering material, and has a porosity of 5% or more. It is less than 50%.
【００１１】プリフォーム基板の気孔径は、サブミクロ
ンから数百ミクロンに分布している。この気孔を溶融し
た金属で充填するためには、溶融金属の圧力をラム断面
積あたり２００ｋｇ／cm2以上１５００ｋｇ／cm2とする
必要がある。The pore diameter of the preform substrate ranges from submicron to several hundred microns. To fill the pores in the molten metal, it is necessary to set the pressure of the molten metal and the ram cross-sectional area per 200 kg / cm 2 or more 1500 kg / cm 2.
【００１２】プリフォーム基板と冷却装置を空隙なく一
体化するためには、溶融金属の圧力をラム断面積あたり
２００ｋｇ／cm2以上とする必要がある。In order to integrate the preform substrate and the cooling device without gaps, the pressure of the molten metal needs to be 200 kg / cm 2 or more per ram cross-sectional area.
【００１３】[0013]
【００１４】以下、発明の実施の形態を実施例に基づく
図面を参照して説明する。プリフォーム基板と冷却装置
であるパイプを仮設し一体化した部品を予熱後、金型に
いれる。溶融金属を同金型に入れプレス機で加圧する。
この条件を３０分間保ちその後金型から鋳造品を取り出
す。同鋳造品から一体化した部品を研削加工する。その
基本配置は図１で示される。Hereinafter, embodiments of the present invention will be described with reference to the drawings based on embodiments. After the preformed substrate and a pipe as a cooling device are temporarily installed and integrated, the components are preheated and then put into a mold. The molten metal is placed in the same mold and pressed by a press.
This condition is maintained for 30 minutes, after which the casting is removed from the mold. The integrated part is ground from the casting. Its basic arrangement is shown in FIG.
【００１５】以下、実施例により本発明をさらに説明す
るが、本発明の技術的範囲がこれに限定されるものでは
ない。 実施例１ 人造黒鉛材を切り出し、長さ１００mm、幅１００mm、厚
さ１０mmのプリフォーム基板を２枚製作する。 プリフ
ォーム基板に直径１２mmの半円状の溝を切る。２枚のプ
リフォーム基板でこの溝に合わせて予め整形した外形
９．５mmのステンレスパイプを挟み仮止めする。これを
金型内におきアルミニュウム（ＪＩＳＡＣ４ＣＨ）溶湯
を注ぎ圧力５００Kg/cm2で鋳造し、冷却後切削加工し、
部品とする。（図２）Hereinafter, the present invention will be further described with reference to examples, but the technical scope of the present invention is not limited thereto. Example 1 An artificial graphite material was cut out, and two preform substrates having a length of 100 mm, a width of 100 mm, and a thickness of 10 mm were manufactured. A semi-circular groove having a diameter of 12 mm is cut in the preform substrate. The two preform substrates are temporarily fixed with a stainless steel pipe having an outer shape of 9.5 mm shaped in advance in accordance with the groove. Put this in a mold, pour molten aluminum (JISAC4CH), cast at a pressure of 500 kg / cm2, cut after cooling,
Parts. (Fig. 2)
【００１６】実施例２ 炭化珪素を高融点ガラスで焼成した成形体を切り出し、
長さ１００mm、幅１００mm、厚さ１０mmのプリフォーム
基板に直径１２mmの半円状の溝を切る。この溝に合わせ
て予め整形した外形９．５mmのステンレスパイプを仮止
めする。これを金型内におき溶融したアルミニウム（Ｊ
ＩＳＡＣ４ＣＨ）を注ぎ５００Kg/cm2の圧力で鋳造し、
冷却後切削加工し、部品とする。（図３）Example 2 A molded body obtained by firing silicon carbide with high melting point glass was cut out.
A 12 mm diameter semi-circular groove is cut in a preform substrate having a length of 100 mm, a width of 100 mm and a thickness of 10 mm. A 9.5 mm outer diameter stainless steel pipe preliminarily shaped according to this groove is temporarily fixed. This was placed in a mold and the molten aluminum (J
ISAC4CH) and cast at a pressure of 500 kg / cm2.
After cooling, it is cut into parts. (Fig. 3)
【００１７】実施例３ 一方向に炭素繊維が配列している炭素複合材を繊維方向
に直行して切断することで製造した基板から長さ５０m
m、幅５０mm、厚さ１０mmのプリフォーム基板に長さ５
０mm、幅１mm、深さ２mmの溝を２mmピッチで２０個切
る。この溝に長さ５０mm、幅２０mm、厚さ０．９mmの人
造黒鉛材から切り出した薄板を差込み、鋼材で製作した
型に離型材を介して仮止めする。これを金型内におきア
ルミニュウム（ＪＩＳＡＣ４ＣＨ）溶湯を注ぎ圧力５０
０Kg/cm2で鋳造し、冷却後型から取り出し切削加工す
る。（図４）Example 3 A carbon composite material in which carbon fibers are arranged in one direction is cut in a direction perpendicular to the fiber direction and cut from a substrate 50 m in length.
m, width 50 mm, thickness 10 mm, length 5
Cut 20 grooves of 0mm, width of 1mm and depth of 2mm at 2mm pitch. A thin plate cut out of an artificial graphite material having a length of 50 mm, a width of 20 mm, and a thickness of 0.9 mm is inserted into the groove, and temporarily fixed to a mold made of a steel material via a release material. Put this in a mold, pour molten aluminum (JISAC4CH), pressure 50
Cast at 0kg / cm2, take out from mold after cooling, and cut. (FIG. 4)
【００１８】実施例１及び実施例２において、切断面を
顕微鏡で観察したところ、アルミニウムがプリフォーム
の空隙を完全に充填していた。またステンレスパイプと
基板間はアルミニウムで空隙なく充填され、一体化して
いた。In Examples 1 and 2, when the cut surface was observed with a microscope, it was found that the aluminum completely filled the voids of the preform. In addition, the space between the stainless steel pipe and the substrate was filled with aluminum without any gap, and was integrated.
【００１９】[0019]
【発明の効果】本発明は、以下に記載する効果を生じ
る。The present invention has the following effects.
【００２０】基板面の熱膨張率が、実施例１の基板で５
×１０-6／℃、実施例２で７×１０-6／℃、実施例３で
１０×１０-6／℃で、基板面に接合されるシリコン、ア
ルミナ、窒化アルミニウムの熱膨張率に近くなった。The coefficient of thermal expansion of the substrate surface is 5
× 10 −6 / ° C., 7 × 10 −6 / ° C. in Example 2, and 10 × 10 −6 / ° C. in Example 3, close to the thermal expansion coefficients of silicon, alumina, and aluminum nitride bonded to the substrate surface became.
【００２１】基板の熱伝導率が、実施例１の基板で２０
０Ｗ／ｍ・Ｋ、実施例２で１２０Ｗ／ｍ・Ｋ、実施例３
で４００Ｗ／ｍ・Ｋあり、基板として使用できる。The thermal conductivity of the substrate was 20 in the substrate of Example 1.
0 W / m · K, 120 W / m · K in Example 2, Example 3
And it can be used as a substrate.
【００２２】基板と冷却パイプあるいはフィンを接合す
るための熱伝導率の低いはんだ、ろう材、樹脂の接合層
がなく、また界面に空隙がなく熱伝導が良好である。There is no solder, brazing material, or resin bonding layer having low thermal conductivity for bonding the substrate and the cooling pipe or fin, and there is no void at the interface, and the heat conduction is good.
【００２３】実施例１の冷却装置の両面を基板とし、両
面に電子機器を搭載することで電子機器の占有体積を減
少できる。By arranging electronic devices on both sides of the cooling device of the first embodiment as substrates and mounting electronic devices on both surfaces, the volume occupied by the electronic devices can be reduced.
【図１】試作品の設定位置図である。FIG. 1 is a set position diagram of a prototype.
【図２】実施例１で試作した両面が基板となっている液
冷用部品の平面及び立面図である。FIGS. 2A and 2B are a plan view and an elevation view of a liquid cooling component prototyped on both sides as a substrate in Example 1. FIGS.
【図３】実施例２で試作した片面が基板となっている液
冷用部品の平面及び立面図である。FIG. 3 is a plan view and an elevation view of a liquid cooling component having one side serving as a substrate, which is a prototype manufactured in Example 2.
【図４】実施例３で試作した片面が空冷用のフィンとな
っている部品の平面及び立面図である。4A and 4B are a plan view and an elevation view of a component manufactured on a trial basis in Example 3 and having one surface serving as a fin for air cooling.
１ 試作品 ２ 溶融した金属 ３ プレス機のラム ４ 金型 ５ 複合材プリフォーム ６ 金属 ７ パイプ ８ 薄板（フィンとなる） ９ 型 DESCRIPTION OF SYMBOLS 1 Prototype 2 Melted metal 3 Ram of press 4 Mold 5 Composite preform 6 Metal 7 Pipe 8 Thin plate (fin) 9 type
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｂ２２Ｄ 19/14 Ｂ２２Ｄ 19/14 Ｃ Ｈ０１Ｌ 23/373 Ｈ０５Ｋ 7/20 Ｍ Ｈ０５Ｋ 7/20 Ｈ０１Ｌ 23/36 Ｍ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) B22D 19/14 B22D 19/14 C H01L 23/373 H05K 7/20 M H05K 7/20 H01L 23/36 M
Claims (5)
と金属あるいは炭素材と金属からなる複合材基板と液体
を冷却媒体とする冷却装置が金属で一体化している冷却
装置付基板。1. A substrate with a cooling device for removing heat of an electronic substrate, wherein a composite material substrate made of ceramic and metal or carbon material and metal and a cooling device using liquid as a cooling medium are integrated with metal.
と金属あるいは炭素材と金属からなる複合材基板と気体
を冷却媒体とする冷却装置が金属で一体化している冷却
装置付基板。2. A substrate with a cooling device for removing heat from an electronic substrate, wherein a composite material substrate made of ceramic and metal or carbon material and metal and a cooling device using gas as a cooling medium are integrated with metal.
と金属あるいは炭素材と金属からなる２枚の複合材基板
が液体を媒体とする冷却装置をはさみ一体化している冷
却装置付基板。3. A substrate with a cooling device for removing heat of an electronic substrate, wherein two composite substrates made of ceramic and metal or carbon material and metal are integrated with a cooling device using a liquid as a medium.
クと金属あるいは炭素材と金属からなる複合材基板の熱
膨張率が１０×１０-6／℃以下、熱伝導率が１２０Ｗ／
（ｍ・Ｋ）以上のいずれかである基板。4. A composite substrate comprising a ceramic and a metal or a carbon material and a metal according to claim 1, 2 or 3, having a coefficient of thermal expansion of 10 × 10 −6 / ° C. or less and a thermal conductivity of 120 W /
(M · K) A substrate that is one of the above.
板の金属が、アルミニウム、マグネシウム、銅、銀、あ
るいはそれらのひとつ以上を含む合金から選ばれる。5. The composite substrate according to claim 1, 2 or 3, wherein the metal is selected from aluminum, magnesium, copper, silver, and alloys containing at least one of them.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17489599A JP2001007265A (en) | 1999-06-22 | 1999-06-22 | Substrate with cooling device and preparation thereof |
| EP19990971789 EP1055650B1 (en) | 1998-11-11 | 1999-11-11 | Carbon-based metal composite material, method for preparation thereof and use thereof |
| US09/600,032 US6649265B1 (en) | 1998-11-11 | 1999-11-11 | Carbon-based metal composite material, method for preparation thereof and use thereof |
| PCT/JP1999/006304 WO2000027776A1 (en) | 1998-11-11 | 1999-11-11 | Carbon-based metal composite material, method for preparation thereof and use thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17489599A JP2001007265A (en) | 1999-06-22 | 1999-06-22 | Substrate with cooling device and preparation thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001007265A true JP2001007265A (en) | 2001-01-12 |
Family
ID=15986573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17489599A Pending JP2001007265A (en) | 1998-11-11 | 1999-06-22 | Substrate with cooling device and preparation thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001007265A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1585173A2 (en) * | 2004-03-31 | 2005-10-12 | Dowa Mining Co., Ltd. | Aluminium bonding member and method for producing same |
| US7433187B2 (en) | 2003-03-28 | 2008-10-07 | Ngk Insulators, Ltd. | Heat spreader module |
| US7447032B2 (en) | 2005-09-09 | 2008-11-04 | Ngk Insulators, Ltd. | Heat spreader module and method of manufacturing same |
| JP2010103582A (en) * | 2004-03-31 | 2010-05-06 | Dowa Holdings Co Ltd | Aluminum bonding member |
| WO2012100810A1 (en) * | 2011-01-24 | 2012-08-02 | Schaffner Emv Ag | A cooling component for a transformer comprising ceramic |
| WO2023099252A1 (en) * | 2021-12-02 | 2023-06-08 | Zf Friedrichshafen Ag | Cooling device for cooling a unit to be cooled, and method for producing a cooling device |
-
1999
- 1999-06-22 JP JP17489599A patent/JP2001007265A/en active Pending
Cited By (9)
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| US7433187B2 (en) | 2003-03-28 | 2008-10-07 | Ngk Insulators, Ltd. | Heat spreader module |
| EP1585173A2 (en) * | 2004-03-31 | 2005-10-12 | Dowa Mining Co., Ltd. | Aluminium bonding member and method for producing same |
| JP2005317890A (en) * | 2004-03-31 | 2005-11-10 | Dowa Mining Co Ltd | Aluminum jointing member and its manufacturing method |
| EP1585173A3 (en) * | 2004-03-31 | 2006-10-11 | Dowa Mining Co., Ltd. | Aluminium bonding member and method for producing same |
| JP2010103582A (en) * | 2004-03-31 | 2010-05-06 | Dowa Holdings Co Ltd | Aluminum bonding member |
| JP4543279B2 (en) * | 2004-03-31 | 2010-09-15 | Ｄｏｗａメタルテック株式会社 | Manufacturing method of aluminum joining member |
| US7447032B2 (en) | 2005-09-09 | 2008-11-04 | Ngk Insulators, Ltd. | Heat spreader module and method of manufacturing same |
| WO2012100810A1 (en) * | 2011-01-24 | 2012-08-02 | Schaffner Emv Ag | A cooling component for a transformer comprising ceramic |
| WO2023099252A1 (en) * | 2021-12-02 | 2023-06-08 | Zf Friedrichshafen Ag | Cooling device for cooling a unit to be cooled, and method for producing a cooling device |
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