DE69621165T2 - Ferroelektrischer Speicher und Verfahren für seine Betriebswirkung - Google Patents
Ferroelektrischer Speicher und Verfahren für seine BetriebswirkungInfo
- Publication number
- DE69621165T2 DE69621165T2 DE69621165T DE69621165T DE69621165T2 DE 69621165 T2 DE69621165 T2 DE 69621165T2 DE 69621165 T DE69621165 T DE 69621165T DE 69621165 T DE69621165 T DE 69621165T DE 69621165 T2 DE69621165 T2 DE 69621165T2
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- data signal
- signal line
- memory cell
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000015654 memory Effects 0.000 title claims description 341
- 238000000034 method Methods 0.000 title claims description 39
- 239000003990 capacitor Substances 0.000 claims description 171
- 230000003071 parasitic effect Effects 0.000 claims description 79
- 230000010287 polarization Effects 0.000 claims description 25
- 230000008859 change Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 230000003213 activating effect Effects 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 5
- 238000003491 array Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 26
- 230000003321 amplification Effects 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 10
- 238000003199 nucleic acid amplification method Methods 0.000 description 10
- 230000036961 partial effect Effects 0.000 description 6
- 230000002269 spontaneous effect Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00006495A JP3186485B2 (ja) | 1995-01-04 | 1995-01-04 | 強誘電体メモリ装置およびその動作制御方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69621165D1 DE69621165D1 (de) | 2002-06-20 |
| DE69621165T2 true DE69621165T2 (de) | 2002-12-19 |
Family
ID=11463771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69621165T Expired - Fee Related DE69621165T2 (de) | 1995-01-04 | 1996-01-04 | Ferroelektrischer Speicher und Verfahren für seine Betriebswirkung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5617349A (enExample) |
| EP (1) | EP0721191B1 (enExample) |
| JP (1) | JP3186485B2 (enExample) |
| KR (1) | KR100201735B1 (enExample) |
| DE (1) | DE69621165T2 (enExample) |
| TW (1) | TW304263B (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3127751B2 (ja) * | 1995-01-04 | 2001-01-29 | 日本電気株式会社 | 強誘電体メモリ装置およびその動作制御方法 |
| KR960038973A (ko) * | 1995-04-25 | 1996-11-21 | 이데이 노부유키 | 강유전체기억장치 |
| JPH09120685A (ja) * | 1995-10-24 | 1997-05-06 | Sony Corp | 強誘電体記憶装置 |
| WO1998056003A1 (fr) * | 1997-06-05 | 1998-12-10 | Matsushita Electronics Corporation | Dispositif a memoire ferroelectrique et son procede de commande |
| JP3196824B2 (ja) * | 1997-07-16 | 2001-08-06 | 日本電気株式会社 | 強誘電体メモリ装置 |
| DE19805712A1 (de) * | 1998-02-12 | 1999-08-26 | Siemens Ag | Speicherzellenanordnung und entsprechendes Herstellungsverfahren |
| EP0994009B1 (en) | 1998-10-16 | 2004-12-01 | Same Deutz-Fahr Group Spa | An agricultural machine with a self-leveling cab |
| JP3875416B2 (ja) * | 1998-11-11 | 2007-01-31 | 富士通株式会社 | 強誘電体記憶装置 |
| US6147895A (en) * | 1999-06-04 | 2000-11-14 | Celis Semiconductor Corporation | Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same |
| KR100339415B1 (ko) * | 1999-09-08 | 2002-05-31 | 박종섭 | 불휘발성 강유전체 메모리 장치 |
| JP2001297593A (ja) | 2000-04-10 | 2001-10-26 | Nec Corp | 半導体記憶装置及びデータ出力方法 |
| JP4405094B2 (ja) * | 2001-01-29 | 2010-01-27 | Ｏｋｉセミコンダクタ株式会社 | 強誘電体メモリ |
| JP3936599B2 (ja) * | 2002-02-25 | 2007-06-27 | 富士通株式会社 | 半導体メモリ |
| CN1695200B (zh) * | 2003-02-27 | 2010-04-28 | 富士通微电子株式会社 | 半导体存储装置 |
| JP3887348B2 (ja) * | 2003-05-16 | 2007-02-28 | 株式会社東芝 | 半導体記憶装置 |
| JP2008217937A (ja) * | 2007-03-06 | 2008-09-18 | Toshiba Corp | 強誘電体記憶装置及びその制御方法 |
| US7668003B2 (en) * | 2008-04-24 | 2010-02-23 | International Business Machines Corporation | Dynamic random access memory circuit, design structure and method |
| JP2010102793A (ja) * | 2008-10-24 | 2010-05-06 | Toshiba Corp | 半導体記憶装置 |
| JP2010277615A (ja) | 2009-05-26 | 2010-12-09 | Panasonic Corp | 半導体記憶装置、および半導体集積回路 |
| US10446608B2 (en) | 2014-09-30 | 2019-10-15 | Nxp Usa, Inc. | Non-volatile random access memory (NVRAM) |
| US9607663B2 (en) * | 2015-08-11 | 2017-03-28 | Nxp Usa, Inc. | Non-volatile dynamic random access memory (NVDRAM) with programming line |
| WO2018044486A1 (en) | 2016-08-31 | 2018-03-08 | Micron Technology, Inc. | Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory |
| KR102227270B1 (ko) | 2016-08-31 | 2021-03-15 | 마이크론 테크놀로지, 인크. | 강유전 메모리 셀 |
| SG11201901211XA (en) | 2016-08-31 | 2019-03-28 | Micron Technology Inc | Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory |
| EP3507807A4 (en) | 2016-08-31 | 2020-04-29 | Micron Technology, Inc. | APPARATUSES AND METHODS COMPRISING AND ACCESSING A TWO-TRANSISTOR MEMORY AND A CAPACITOR |
| US10867675B2 (en) * | 2017-07-13 | 2020-12-15 | Micron Technology, Inc. | Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells |
| US11205680B2 (en) | 2019-09-03 | 2021-12-21 | Nxp Usa, Inc. | Non-volatile random access memory (NVRAM) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4873664A (en) * | 1987-02-12 | 1989-10-10 | Ramtron Corporation | Self restoring ferroelectric memory |
| US4888733A (en) * | 1988-09-12 | 1989-12-19 | Ramtron Corporation | Non-volatile memory cell and sensing method |
| US5031143A (en) * | 1990-11-21 | 1991-07-09 | National Semiconductor Corporation | Preamplifier for ferroelectric memory device sense amplifier |
| US5262982A (en) * | 1991-07-18 | 1993-11-16 | National Semiconductor Corporation | Nondestructive reading of a ferroelectric capacitor |
| US5198706A (en) * | 1991-10-15 | 1993-03-30 | National Semiconductor | Ferroelectric programming cell for configurable logic |
| KR930015015A (ko) * | 1991-12-20 | 1993-07-23 | 윌리엄 이. 힐러 | 강유전성 캐패시터를 갖는 메모리 셀 |
| US5381364A (en) * | 1993-06-24 | 1995-01-10 | Ramtron International Corporation | Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation |
| JP3191549B2 (ja) * | 1994-02-15 | 2001-07-23 | 松下電器産業株式会社 | 半導体メモリ装置 |
| JP3127751B2 (ja) * | 1995-01-04 | 2001-01-29 | 日本電気株式会社 | 強誘電体メモリ装置およびその動作制御方法 |
-
1995
- 1995-01-04 JP JP00006495A patent/JP3186485B2/ja not_active Expired - Fee Related
- 1995-12-29 TW TW084114119A patent/TW304263B/zh active
-
1996
- 1996-01-04 EP EP96100087A patent/EP0721191B1/en not_active Expired - Lifetime
- 1996-01-04 DE DE69621165T patent/DE69621165T2/de not_active Expired - Fee Related
- 1996-01-04 US US08/582,960 patent/US5617349A/en not_active Expired - Lifetime
- 1996-01-04 KR KR1019960000911A patent/KR100201735B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0721191B1 (en) | 2002-05-15 |
| EP0721191A2 (en) | 1996-07-10 |
| KR960030239A (ko) | 1996-08-17 |
| EP0721191A3 (en) | 1999-01-20 |
| KR100201735B1 (ko) | 1999-06-15 |
| DE69621165D1 (de) | 2002-06-20 |
| TW304263B (enExample) | 1997-05-01 |
| US5617349A (en) | 1997-04-01 |
| JP3186485B2 (ja) | 2001-07-11 |
| JPH08185694A (ja) | 1996-07-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |