JP3186485B2 - 強誘電体メモリ装置およびその動作制御方法 - Google Patents

強誘電体メモリ装置およびその動作制御方法

Info

Publication number
JP3186485B2
JP3186485B2 JP00006495A JP6495A JP3186485B2 JP 3186485 B2 JP3186485 B2 JP 3186485B2 JP 00006495 A JP00006495 A JP 00006495A JP 6495 A JP6495 A JP 6495A JP 3186485 B2 JP3186485 B2 JP 3186485B2
Authority
JP
Japan
Prior art keywords
signal line
voltage
data signal
data
ferroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP00006495A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08185694A (ja
Inventor
洋紀 小池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP00006495A priority Critical patent/JP3186485B2/ja
Priority to TW084114119A priority patent/TW304263B/zh
Priority to KR1019960000911A priority patent/KR100201735B1/ko
Priority to US08/582,960 priority patent/US5617349A/en
Priority to EP96100087A priority patent/EP0721191B1/en
Priority to DE69621165T priority patent/DE69621165T2/de
Publication of JPH08185694A publication Critical patent/JPH08185694A/ja
Application granted granted Critical
Publication of JP3186485B2 publication Critical patent/JP3186485B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP00006495A 1995-01-04 1995-01-04 強誘電体メモリ装置およびその動作制御方法 Expired - Fee Related JP3186485B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP00006495A JP3186485B2 (ja) 1995-01-04 1995-01-04 強誘電体メモリ装置およびその動作制御方法
TW084114119A TW304263B (enExample) 1995-01-04 1995-12-29
KR1019960000911A KR100201735B1 (ko) 1995-01-04 1996-01-04 강유전체 메모리 장치 및 그것의 동작 제어 방법
US08/582,960 US5617349A (en) 1995-01-04 1996-01-04 Ferroelectric memory and method for controlling operation of the same
EP96100087A EP0721191B1 (en) 1995-01-04 1996-01-04 Ferroelectric memory and method for controlling operation of the same
DE69621165T DE69621165T2 (de) 1995-01-04 1996-01-04 Ferroelektrischer Speicher und Verfahren für seine Betriebswirkung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP00006495A JP3186485B2 (ja) 1995-01-04 1995-01-04 強誘電体メモリ装置およびその動作制御方法

Publications (2)

Publication Number Publication Date
JPH08185694A JPH08185694A (ja) 1996-07-16
JP3186485B2 true JP3186485B2 (ja) 2001-07-11

Family

ID=11463771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP00006495A Expired - Fee Related JP3186485B2 (ja) 1995-01-04 1995-01-04 強誘電体メモリ装置およびその動作制御方法

Country Status (6)

Country Link
US (1) US5617349A (enExample)
EP (1) EP0721191B1 (enExample)
JP (1) JP3186485B2 (enExample)
KR (1) KR100201735B1 (enExample)
DE (1) DE69621165T2 (enExample)
TW (1) TW304263B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6273203B1 (en) 1998-10-16 2001-08-14 Same Deutz-Fahr Spa Agricultural machine with a self-leveling cab

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3127751B2 (ja) * 1995-01-04 2001-01-29 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
KR960038973A (ko) * 1995-04-25 1996-11-21 이데이 노부유키 강유전체기억장치
JPH09120685A (ja) * 1995-10-24 1997-05-06 Sony Corp 強誘電体記憶装置
US6118688A (en) * 1997-06-05 2000-09-12 Matsushita Electronics Corporation Ferroelectric memory device and method for driving it
JP3196824B2 (ja) * 1997-07-16 2001-08-06 日本電気株式会社 強誘電体メモリ装置
DE19805712A1 (de) * 1998-02-12 1999-08-26 Siemens Ag Speicherzellenanordnung und entsprechendes Herstellungsverfahren
JP3875416B2 (ja) * 1998-11-11 2007-01-31 富士通株式会社 強誘電体記憶装置
US6147895A (en) * 1999-06-04 2000-11-14 Celis Semiconductor Corporation Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same
KR100339415B1 (ko) * 1999-09-08 2002-05-31 박종섭 불휘발성 강유전체 메모리 장치
JP2001297593A (ja) 2000-04-10 2001-10-26 Nec Corp 半導体記憶装置及びデータ出力方法
JP4405094B2 (ja) * 2001-01-29 2010-01-27 Ｏｋｉセミコンダクタ株式会社 強誘電体メモリ
JP3936599B2 (ja) * 2002-02-25 2007-06-27 富士通株式会社 半導体メモリ
CN1695200B (zh) * 2003-02-27 2010-04-28 富士通微电子株式会社 半导体存储装置
JP3887348B2 (ja) * 2003-05-16 2007-02-28 株式会社東芝 半導体記憶装置
JP2008217937A (ja) * 2007-03-06 2008-09-18 Toshiba Corp 強誘電体記憶装置及びその制御方法
US7668003B2 (en) * 2008-04-24 2010-02-23 International Business Machines Corporation Dynamic random access memory circuit, design structure and method
JP2010102793A (ja) * 2008-10-24 2010-05-06 Toshiba Corp 半導体記憶装置
JP2010277615A (ja) * 2009-05-26 2010-12-09 Panasonic Corp 半導体記憶装置、および半導体集積回路
US10446608B2 (en) 2014-09-30 2019-10-15 Nxp Usa, Inc. Non-volatile random access memory (NVRAM)
US9607663B2 (en) * 2015-08-11 2017-03-28 Nxp Usa, Inc. Non-volatile dynamic random access memory (NVDRAM) with programming line
WO2018044485A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Ferroelectric memory cells
EP3507805B1 (en) 2016-08-31 2025-10-01 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
KR102314663B1 (ko) 2016-08-31 2021-10-21 마이크론 테크놀로지, 인크. 2 트랜지스터-1 커패시터 메모리를 포함하고 이를 액세스하기 위한 장치 및 방법
WO2018044487A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
US10867675B2 (en) * 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
US11205680B2 (en) 2019-09-03 2021-12-21 Nxp Usa, Inc. Non-volatile random access memory (NVRAM)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US4888733A (en) * 1988-09-12 1989-12-19 Ramtron Corporation Non-volatile memory cell and sensing method
US5031143A (en) * 1990-11-21 1991-07-09 National Semiconductor Corporation Preamplifier for ferroelectric memory device sense amplifier
US5262982A (en) * 1991-07-18 1993-11-16 National Semiconductor Corporation Nondestructive reading of a ferroelectric capacitor
US5198706A (en) * 1991-10-15 1993-03-30 National Semiconductor Ferroelectric programming cell for configurable logic
KR930015015A (ko) * 1991-12-20 1993-07-23 윌리엄 이. 힐러 강유전성 캐패시터를 갖는 메모리 셀
US5381364A (en) * 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation
JP3191549B2 (ja) * 1994-02-15 2001-07-23 松下電器産業株式会社 半導体メモリ装置
JP3127751B2 (ja) * 1995-01-04 2001-01-29 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6273203B1 (en) 1998-10-16 2001-08-14 Same Deutz-Fahr Spa Agricultural machine with a self-leveling cab

Also Published As

Publication number Publication date
DE69621165D1 (de) 2002-06-20
KR960030239A (ko) 1996-08-17
DE69621165T2 (de) 2002-12-19
TW304263B (enExample) 1997-05-01
JPH08185694A (ja) 1996-07-16
US5617349A (en) 1997-04-01
EP0721191A2 (en) 1996-07-10
KR100201735B1 (ko) 1999-06-15
EP0721191B1 (en) 2002-05-15
EP0721191A3 (en) 1999-01-20

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