KR100201735B1 - 강유전체 메모리 장치 및 그것의 동작 제어 방법 - Google Patents

강유전체 메모리 장치 및 그것의 동작 제어 방법 Download PDF

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Publication number
KR100201735B1
KR100201735B1 KR1019960000911A KR19960000911A KR100201735B1 KR 100201735 B1 KR100201735 B1 KR 100201735B1 KR 1019960000911 A KR1019960000911 A KR 1019960000911A KR 19960000911 A KR19960000911 A KR 19960000911A KR 100201735 B1 KR100201735 B1 KR 100201735B1
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KR
South Korea
Prior art keywords
voltage
signal line
data
ferroelectric
data signal
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KR1019960000911A
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English (en)
Korean (ko)
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KR960030239A (ko
Inventor
히로키 고이케
Original Assignee
가네꼬 히사시
닛본 덴기 가부시끼가이샤
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Publication of KR960030239A publication Critical patent/KR960030239A/ko
Application granted granted Critical
Publication of KR100201735B1 publication Critical patent/KR100201735B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1019960000911A 1995-01-04 1996-01-04 강유전체 메모리 장치 및 그것의 동작 제어 방법 Expired - Fee Related KR100201735B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-000064 1995-01-04
JP00006495A JP3186485B2 (ja) 1995-01-04 1995-01-04 強誘電体メモリ装置およびその動作制御方法

Publications (2)

Publication Number Publication Date
KR960030239A KR960030239A (ko) 1996-08-17
KR100201735B1 true KR100201735B1 (ko) 1999-06-15

Family

ID=11463771

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960000911A Expired - Fee Related KR100201735B1 (ko) 1995-01-04 1996-01-04 강유전체 메모리 장치 및 그것의 동작 제어 방법

Country Status (6)

Country Link
US (1) US5617349A (enExample)
EP (1) EP0721191B1 (enExample)
JP (1) JP3186485B2 (enExample)
KR (1) KR100201735B1 (enExample)
DE (1) DE69621165T2 (enExample)
TW (1) TW304263B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200018722A (ko) * 2017-07-13 2020-02-19 마이크론 테크놀로지, 인크. 강유전 메모리 셀 및 유전 메모리 셀을 포함하는 메모리를 위한 장치 및 방법
US11107515B2 (en) 2016-08-31 2021-08-31 Micron Technology, Inc. Ferroelectric memory cells
US11205468B2 (en) 2016-08-31 2021-12-21 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory

Families Citing this family (24)

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JP3127751B2 (ja) * 1995-01-04 2001-01-29 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
KR960038973A (ko) * 1995-04-25 1996-11-21 이데이 노부유키 강유전체기억장치
JPH09120685A (ja) * 1995-10-24 1997-05-06 Sony Corp 強誘電体記憶装置
WO1998056003A1 (fr) * 1997-06-05 1998-12-10 Matsushita Electronics Corporation Dispositif a memoire ferroelectrique et son procede de commande
JP3196824B2 (ja) * 1997-07-16 2001-08-06 日本電気株式会社 強誘電体メモリ装置
DE19805712A1 (de) * 1998-02-12 1999-08-26 Siemens Ag Speicherzellenanordnung und entsprechendes Herstellungsverfahren
EP0994009B1 (en) 1998-10-16 2004-12-01 Same Deutz-Fahr Group Spa An agricultural machine with a self-leveling cab
JP3875416B2 (ja) * 1998-11-11 2007-01-31 富士通株式会社 強誘電体記憶装置
US6147895A (en) * 1999-06-04 2000-11-14 Celis Semiconductor Corporation Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same
KR100339415B1 (ko) * 1999-09-08 2002-05-31 박종섭 불휘발성 강유전체 메모리 장치
JP2001297593A (ja) 2000-04-10 2001-10-26 Nec Corp 半導体記憶装置及びデータ出力方法
JP4405094B2 (ja) * 2001-01-29 2010-01-27 Ｏｋｉセミコンダクタ株式会社 強誘電体メモリ
JP3936599B2 (ja) * 2002-02-25 2007-06-27 富士通株式会社 半導体メモリ
CN1695200B (zh) * 2003-02-27 2010-04-28 富士通微电子株式会社 半导体存储装置
JP3887348B2 (ja) * 2003-05-16 2007-02-28 株式会社東芝 半導体記憶装置
JP2008217937A (ja) * 2007-03-06 2008-09-18 Toshiba Corp 強誘電体記憶装置及びその制御方法
US7668003B2 (en) * 2008-04-24 2010-02-23 International Business Machines Corporation Dynamic random access memory circuit, design structure and method
JP2010102793A (ja) * 2008-10-24 2010-05-06 Toshiba Corp 半導体記憶装置
JP2010277615A (ja) 2009-05-26 2010-12-09 Panasonic Corp 半導体記憶装置、および半導体集積回路
US10446608B2 (en) 2014-09-30 2019-10-15 Nxp Usa, Inc. Non-volatile random access memory (NVRAM)
US9607663B2 (en) * 2015-08-11 2017-03-28 Nxp Usa, Inc. Non-volatile dynamic random access memory (NVDRAM) with programming line
SG11201901211XA (en) 2016-08-31 2019-03-28 Micron Technology Inc Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
EP3507807A4 (en) 2016-08-31 2020-04-29 Micron Technology, Inc. APPARATUSES AND METHODS COMPRISING AND ACCESSING A TWO-TRANSISTOR MEMORY AND A CAPACITOR
US11205680B2 (en) 2019-09-03 2021-12-21 Nxp Usa, Inc. Non-volatile random access memory (NVRAM)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US4888733A (en) * 1988-09-12 1989-12-19 Ramtron Corporation Non-volatile memory cell and sensing method
US5031143A (en) * 1990-11-21 1991-07-09 National Semiconductor Corporation Preamplifier for ferroelectric memory device sense amplifier
US5262982A (en) * 1991-07-18 1993-11-16 National Semiconductor Corporation Nondestructive reading of a ferroelectric capacitor
US5198706A (en) * 1991-10-15 1993-03-30 National Semiconductor Ferroelectric programming cell for configurable logic
KR930015015A (ko) * 1991-12-20 1993-07-23 윌리엄 이. 힐러 강유전성 캐패시터를 갖는 메모리 셀
US5381364A (en) * 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation
JP3191549B2 (ja) * 1994-02-15 2001-07-23 松下電器産業株式会社 半導体メモリ装置
JP3127751B2 (ja) * 1995-01-04 2001-01-29 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11107515B2 (en) 2016-08-31 2021-08-31 Micron Technology, Inc. Ferroelectric memory cells
US11205468B2 (en) 2016-08-31 2021-12-21 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
US11574668B2 (en) 2016-08-31 2023-02-07 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
KR20200018722A (ko) * 2017-07-13 2020-02-19 마이크론 테크놀로지, 인크. 강유전 메모리 셀 및 유전 메모리 셀을 포함하는 메모리를 위한 장치 및 방법
KR102308939B1 (ko) 2017-07-13 2021-10-06 마이크론 테크놀로지, 인크. 강유전 메모리 셀 및 유전 메모리 셀을 포함하는 메모리를 위한 장치 및 방법
US11901005B2 (en) 2017-07-13 2024-02-13 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

Also Published As

Publication number Publication date
EP0721191B1 (en) 2002-05-15
EP0721191A2 (en) 1996-07-10
KR960030239A (ko) 1996-08-17
EP0721191A3 (en) 1999-01-20
DE69621165D1 (de) 2002-06-20
TW304263B (enExample) 1997-05-01
DE69621165T2 (de) 2002-12-19
US5617349A (en) 1997-04-01
JP3186485B2 (ja) 2001-07-11
JPH08185694A (ja) 1996-07-16

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