TW304263B - - Google Patents
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- Publication number
- TW304263B TW304263B TW084114119A TW84114119A TW304263B TW 304263 B TW304263 B TW 304263B TW 084114119 A TW084114119 A TW 084114119A TW 84114119 A TW84114119 A TW 84114119A TW 304263 B TW304263 B TW 304263B
- Authority
- TW
- Taiwan
- Prior art keywords
- data
- billion
- voltage
- signal line
- ferroelectric
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims description 153
- 230000003071 parasitic effect Effects 0.000 claims description 44
- 230000010287 polarization Effects 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 26
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 24
- 230000003321 amplification Effects 0.000 claims description 22
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 22
- 238000012546 transfer Methods 0.000 claims description 18
- 230000009471 action Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 229910052742 iron Inorganic materials 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 2
- 238000010248 power generation Methods 0.000 claims description 2
- 238000000354 decomposition reaction Methods 0.000 claims 2
- 238000009434 installation Methods 0.000 claims 2
- 238000010276 construction Methods 0.000 claims 1
- 230000010332 selective attention Effects 0.000 claims 1
- 230000001568 sexual effect Effects 0.000 claims 1
- 230000000875 corresponding effect Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 238000007639 printing Methods 0.000 description 4
- 230000005621 ferroelectricity Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 239000008911 qingzhi Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00006495A JP3186485B2 (ja) | 1995-01-04 | 1995-01-04 | 強誘電体メモリ装置およびその動作制御方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW304263B true TW304263B (enExample) | 1997-05-01 |
Family
ID=11463771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084114119A TW304263B (enExample) | 1995-01-04 | 1995-12-29 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5617349A (enExample) |
| EP (1) | EP0721191B1 (enExample) |
| JP (1) | JP3186485B2 (enExample) |
| KR (1) | KR100201735B1 (enExample) |
| DE (1) | DE69621165T2 (enExample) |
| TW (1) | TW304263B (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3127751B2 (ja) * | 1995-01-04 | 2001-01-29 | 日本電気株式会社 | 強誘電体メモリ装置およびその動作制御方法 |
| KR960038973A (ko) * | 1995-04-25 | 1996-11-21 | 이데이 노부유키 | 강유전체기억장치 |
| JPH09120685A (ja) * | 1995-10-24 | 1997-05-06 | Sony Corp | 強誘電体記憶装置 |
| WO1998056003A1 (fr) * | 1997-06-05 | 1998-12-10 | Matsushita Electronics Corporation | Dispositif a memoire ferroelectrique et son procede de commande |
| JP3196824B2 (ja) * | 1997-07-16 | 2001-08-06 | 日本電気株式会社 | 強誘電体メモリ装置 |
| DE19805712A1 (de) * | 1998-02-12 | 1999-08-26 | Siemens Ag | Speicherzellenanordnung und entsprechendes Herstellungsverfahren |
| EP0994009B1 (en) | 1998-10-16 | 2004-12-01 | Same Deutz-Fahr Group Spa | An agricultural machine with a self-leveling cab |
| JP3875416B2 (ja) * | 1998-11-11 | 2007-01-31 | 富士通株式会社 | 強誘電体記憶装置 |
| US6147895A (en) * | 1999-06-04 | 2000-11-14 | Celis Semiconductor Corporation | Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same |
| KR100339415B1 (ko) * | 1999-09-08 | 2002-05-31 | 박종섭 | 불휘발성 강유전체 메모리 장치 |
| JP2001297593A (ja) | 2000-04-10 | 2001-10-26 | Nec Corp | 半導体記憶装置及びデータ出力方法 |
| JP4405094B2 (ja) * | 2001-01-29 | 2010-01-27 | Ｏｋｉセミコンダクタ株式会社 | 強誘電体メモリ |
| JP3936599B2 (ja) * | 2002-02-25 | 2007-06-27 | 富士通株式会社 | 半導体メモリ |
| JP4250143B2 (ja) * | 2003-02-27 | 2009-04-08 | 富士通マイクロエレクトロニクス株式会社 | 半導体記憶装置 |
| JP3887348B2 (ja) * | 2003-05-16 | 2007-02-28 | 株式会社東芝 | 半導体記憶装置 |
| JP2008217937A (ja) * | 2007-03-06 | 2008-09-18 | Toshiba Corp | 強誘電体記憶装置及びその制御方法 |
| US7668003B2 (en) * | 2008-04-24 | 2010-02-23 | International Business Machines Corporation | Dynamic random access memory circuit, design structure and method |
| JP2010102793A (ja) * | 2008-10-24 | 2010-05-06 | Toshiba Corp | 半導体記憶装置 |
| JP2010277615A (ja) * | 2009-05-26 | 2010-12-09 | Panasonic Corp | 半導体記憶装置、および半導体集積回路 |
| US10446608B2 (en) | 2014-09-30 | 2019-10-15 | Nxp Usa, Inc. | Non-volatile random access memory (NVRAM) |
| US9607663B2 (en) * | 2015-08-11 | 2017-03-28 | Nxp Usa, Inc. | Non-volatile dynamic random access memory (NVDRAM) with programming line |
| EP3507805B1 (en) | 2016-08-31 | 2025-10-01 | Micron Technology, Inc. | Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory |
| KR102188490B1 (ko) | 2016-08-31 | 2020-12-09 | 마이크론 테크놀로지, 인크. | 강유전체 메모리를 포함하며 강유전체 메모리에 액세스하기 위한 장치 및 방법 |
| KR102314663B1 (ko) | 2016-08-31 | 2021-10-21 | 마이크론 테크놀로지, 인크. | 2 트랜지스터-1 커패시터 메모리를 포함하고 이를 액세스하기 위한 장치 및 방법 |
| JP6980006B2 (ja) * | 2016-08-31 | 2021-12-15 | マイクロン テクノロジー，インク． | 強誘電体メモリセル |
| US10867675B2 (en) * | 2017-07-13 | 2020-12-15 | Micron Technology, Inc. | Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells |
| US11205680B2 (en) | 2019-09-03 | 2021-12-21 | Nxp Usa, Inc. | Non-volatile random access memory (NVRAM) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4873664A (en) * | 1987-02-12 | 1989-10-10 | Ramtron Corporation | Self restoring ferroelectric memory |
| US4888733A (en) * | 1988-09-12 | 1989-12-19 | Ramtron Corporation | Non-volatile memory cell and sensing method |
| US5031143A (en) * | 1990-11-21 | 1991-07-09 | National Semiconductor Corporation | Preamplifier for ferroelectric memory device sense amplifier |
| US5262982A (en) * | 1991-07-18 | 1993-11-16 | National Semiconductor Corporation | Nondestructive reading of a ferroelectric capacitor |
| US5198706A (en) * | 1991-10-15 | 1993-03-30 | National Semiconductor | Ferroelectric programming cell for configurable logic |
| KR930015015A (ko) * | 1991-12-20 | 1993-07-23 | 윌리엄 이. 힐러 | 강유전성 캐패시터를 갖는 메모리 셀 |
| US5381364A (en) * | 1993-06-24 | 1995-01-10 | Ramtron International Corporation | Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation |
| JP3191549B2 (ja) * | 1994-02-15 | 2001-07-23 | 松下電器産業株式会社 | 半導体メモリ装置 |
| JP3127751B2 (ja) * | 1995-01-04 | 2001-01-29 | 日本電気株式会社 | 強誘電体メモリ装置およびその動作制御方法 |
-
1995
- 1995-01-04 JP JP00006495A patent/JP3186485B2/ja not_active Expired - Fee Related
- 1995-12-29 TW TW084114119A patent/TW304263B/zh active
-
1996
- 1996-01-04 EP EP96100087A patent/EP0721191B1/en not_active Expired - Lifetime
- 1996-01-04 DE DE69621165T patent/DE69621165T2/de not_active Expired - Fee Related
- 1996-01-04 US US08/582,960 patent/US5617349A/en not_active Expired - Lifetime
- 1996-01-04 KR KR1019960000911A patent/KR100201735B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR960030239A (ko) | 1996-08-17 |
| US5617349A (en) | 1997-04-01 |
| DE69621165D1 (de) | 2002-06-20 |
| EP0721191B1 (en) | 2002-05-15 |
| EP0721191A2 (en) | 1996-07-10 |
| EP0721191A3 (en) | 1999-01-20 |
| JPH08185694A (ja) | 1996-07-16 |
| KR100201735B1 (ko) | 1999-06-15 |
| JP3186485B2 (ja) | 2001-07-11 |
| DE69621165T2 (de) | 2002-12-19 |
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