TW300996B - - Google Patents
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- Publication number
- TW300996B TW300996B TW085107103A TW85107103A TW300996B TW 300996 B TW300996 B TW 300996B TW 085107103 A TW085107103 A TW 085107103A TW 85107103 A TW85107103 A TW 85107103A TW 300996 B TW300996 B TW 300996B
- Authority
- TW
- Taiwan
- Prior art keywords
- node
- sense amplifier
- digital line
- circuit
- memory cell
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005055 memory storage Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/471,860 US5625588A (en) | 1995-06-06 | 1995-06-06 | Single-ended sensing using global bit lines for DRAM |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW300996B true TW300996B (enExample) | 1997-03-21 |
Family
ID=23873265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085107103A TW300996B (enExample) | 1995-06-06 | 1996-06-13 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US5625588A (enExample) |
| EP (1) | EP0830685B1 (enExample) |
| JP (1) | JP3357899B2 (enExample) |
| KR (1) | KR100284468B1 (enExample) |
| AT (1) | ATE223614T1 (enExample) |
| AU (1) | AU6049196A (enExample) |
| DE (1) | DE69623466T2 (enExample) |
| TW (1) | TW300996B (enExample) |
| WO (1) | WO1996039699A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3723599B2 (ja) * | 1995-04-07 | 2005-12-07 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| US5872736A (en) * | 1996-10-28 | 1999-02-16 | Micron Technology, Inc. | High speed input buffer |
| US5917758A (en) | 1996-11-04 | 1999-06-29 | Micron Technology, Inc. | Adjustable output driver circuit |
| US5835433A (en) * | 1997-06-09 | 1998-11-10 | Micron Technology, Inc. | Floating isolation gate from DRAM sensing |
| US5862072A (en) * | 1997-08-22 | 1999-01-19 | Micron Technology, Inc. | Memory array architecture and method for dynamic cell plate sensing |
| US5949728A (en) * | 1997-12-12 | 1999-09-07 | Scenix Semiconductor, Inc. | High speed, noise immune, single ended sensing scheme for non-volatile memories |
| US6304809B1 (en) | 2000-03-21 | 2001-10-16 | Ford Global Technologies, Inc. | Engine control monitor for vehicle equipped with engine and transmission |
| US6292417B1 (en) | 2000-07-26 | 2001-09-18 | Micron Technology, Inc. | Memory device with reduced bit line pre-charge voltage |
| US6301175B1 (en) * | 2000-07-26 | 2001-10-09 | Micron Technology, Inc. | Memory device with single-ended sensing and low voltage pre-charge |
| ITRM20010001A1 (it) * | 2001-01-03 | 2002-07-03 | Micron Technology Inc | Circuiteria di rilevazione per memorie flash a bassa tensione. |
| US6822904B2 (en) * | 2001-01-03 | 2004-11-23 | Micron Technology, Inc. | Fast sensing scheme for floating-gate memory cells |
| DE10110625A1 (de) * | 2001-03-06 | 2002-09-19 | Infineon Technologies Ag | Verfahren und Schaltungsanordnung zum Bewerten eines Lesesignals eines Leseverstärkers für einen dynamischen Halbleiterspeicher |
| ITRM20010531A1 (it) * | 2001-08-31 | 2003-02-28 | Micron Technology Inc | Dispositivo rilevatore a bassa potenza e alta tensione per memorie ditipo flash. |
| US7372092B2 (en) * | 2005-05-05 | 2008-05-13 | Micron Technology, Inc. | Memory cell, device, and system |
| US7196954B2 (en) * | 2005-06-06 | 2007-03-27 | Infineon Technologies Ag | Sensing current recycling method during self-refresh |
| US7286425B2 (en) * | 2005-10-31 | 2007-10-23 | International Business Machines Corporation | System and method for capacitive mis-match bit-line sensing |
| US8929132B2 (en) | 2011-11-17 | 2015-01-06 | Everspin Technologies, Inc. | Write driver circuit and method for writing to a spin-torque MRAM |
| US9847117B1 (en) | 2016-09-26 | 2017-12-19 | Micron Technology, Inc. | Dynamic reference voltage determination |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4625300A (en) * | 1982-12-01 | 1986-11-25 | Texas Instruments Incorporated | Single-ended sense amplifier for dynamic memory array |
| US4715015A (en) * | 1984-06-01 | 1987-12-22 | Sharp Kabushiki Kaisha | Dynamic semiconductor memory with improved sense signal |
| US4598389A (en) * | 1984-10-01 | 1986-07-01 | Texas Instruments Incorporated | Single-ended CMOS sense amplifier |
| US4823031A (en) * | 1988-02-01 | 1989-04-18 | Texas Instruments Incorporated | Single-ended sense amplifier with positive feedback |
| US5042011A (en) * | 1989-05-22 | 1991-08-20 | Micron Technology, Inc. | Sense amplifier pulldown device with tailored edge input |
| JPH0336763A (ja) * | 1989-07-03 | 1991-02-18 | Hitachi Ltd | 半導体集積回路装置 |
| US5013943A (en) * | 1989-08-11 | 1991-05-07 | Simtek Corporation | Single ended sense amplifier with improved data recall for variable bit line current |
| KR920000409B1 (ko) * | 1989-11-30 | 1992-01-13 | 현대전자산업 주식회사 | 다이나믹램의 분리회로 |
| US5241503A (en) * | 1991-02-25 | 1993-08-31 | Motorola, Inc. | Dynamic random access memory with improved page-mode performance and method therefor having isolator between memory cells and sense amplifiers |
| JPH05182458A (ja) * | 1991-12-26 | 1993-07-23 | Toshiba Corp | 半導体記憶装置 |
| KR950009234B1 (ko) * | 1992-02-19 | 1995-08-18 | 삼성전자주식회사 | 반도체 메모리장치의 비트라인 분리클럭 발생장치 |
| US5220221A (en) * | 1992-03-06 | 1993-06-15 | Micron Technology, Inc. | Sense amplifier pulldown circuit for minimizing ground noise at high power supply voltages |
| US5369317A (en) * | 1992-06-26 | 1994-11-29 | Micron Technology, Inc. | Circuit and method for controlling the potential of a digit line and in limiting said potential to a maximum value |
| US5295100A (en) * | 1992-08-14 | 1994-03-15 | Micron Semiconductor, Inc. | Method for providing a faster ones voltage level restore operation in a DRAM |
| US5367213A (en) * | 1993-06-09 | 1994-11-22 | Micron Semiconductor, Inc. | P-channel sense amplifier pull-up circuit incorporating a voltage comparator for use in DRAM memories having non-bootstrapped word lines |
-
1995
- 1995-06-06 US US08/471,860 patent/US5625588A/en not_active Expired - Lifetime
-
1996
- 1996-06-05 AU AU60491/96A patent/AU6049196A/en not_active Abandoned
- 1996-06-05 DE DE69623466T patent/DE69623466T2/de not_active Expired - Lifetime
- 1996-06-05 EP EP96918168A patent/EP0830685B1/en not_active Expired - Lifetime
- 1996-06-05 WO PCT/US1996/009073 patent/WO1996039699A1/en not_active Ceased
- 1996-06-05 AT AT96918168T patent/ATE223614T1/de not_active IP Right Cessation
- 1996-06-05 JP JP50148197A patent/JP3357899B2/ja not_active Expired - Fee Related
- 1996-06-05 KR KR1019970709065A patent/KR100284468B1/ko not_active Expired - Fee Related
- 1996-06-13 TW TW085107103A patent/TW300996B/zh not_active IP Right Cessation
- 1996-09-09 US US08/707,867 patent/US5684749A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| AU6049196A (en) | 1996-12-24 |
| US5625588A (en) | 1997-04-29 |
| EP0830685A1 (en) | 1998-03-25 |
| ATE223614T1 (de) | 2002-09-15 |
| WO1996039699A1 (en) | 1996-12-12 |
| US5684749A (en) | 1997-11-04 |
| DE69623466T2 (de) | 2003-01-16 |
| KR100284468B1 (ko) | 2001-03-02 |
| DE69623466D1 (de) | 2002-10-10 |
| JP3357899B2 (ja) | 2002-12-16 |
| EP0830685B1 (en) | 2002-09-04 |
| JPH10507864A (ja) | 1998-07-28 |
| KR19990022584A (ko) | 1999-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |