DE69615512D1 - Verfahren zur Herstellung eines Bipolar-Transistors - Google Patents
Verfahren zur Herstellung eines Bipolar-TransistorsInfo
- Publication number
- DE69615512D1 DE69615512D1 DE69615512T DE69615512T DE69615512D1 DE 69615512 D1 DE69615512 D1 DE 69615512D1 DE 69615512 T DE69615512 T DE 69615512T DE 69615512 T DE69615512 T DE 69615512T DE 69615512 D1 DE69615512 D1 DE 69615512D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- bipolar transistor
- bipolar
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7344360A JP2907323B2 (ja) | 1995-12-06 | 1995-12-06 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69615512D1 true DE69615512D1 (de) | 2001-10-31 |
DE69615512T2 DE69615512T2 (de) | 2002-05-23 |
Family
ID=18368641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69615512T Expired - Fee Related DE69615512T2 (de) | 1995-12-06 | 1996-12-04 | Verfahren zur Herstellung eines Bipolar-Transistors |
Country Status (6)
Country | Link |
---|---|
US (2) | US6034412A (de) |
EP (1) | EP0778615B1 (de) |
JP (1) | JP2907323B2 (de) |
KR (1) | KR100338014B1 (de) |
DE (1) | DE69615512T2 (de) |
TW (1) | TW315502B (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19842106A1 (de) | 1998-09-08 | 2000-03-09 | Inst Halbleiterphysik Gmbh | Vertikaler Bipolartransistor und Verfahren zu seiner Herstellung |
JP4945167B2 (ja) * | 2006-05-12 | 2012-06-06 | スタンレー電気株式会社 | 半導体発光素子の製造方法及び該製造方法により製造された半導体発光素子の実装方法 |
JP2019075536A (ja) * | 2017-10-11 | 2019-05-16 | 株式会社村田製作所 | パワーアンプモジュール |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4772566A (en) * | 1987-07-01 | 1988-09-20 | Motorola Inc. | Single tub transistor means and method |
JP2748420B2 (ja) * | 1988-08-12 | 1998-05-06 | ソニー株式会社 | バイポーラトランジスタ及びその製造方法 |
JPH02153534A (ja) * | 1988-12-06 | 1990-06-13 | Toshiba Corp | 半導体装置の製造方法 |
US5204276A (en) * | 1988-12-06 | 1993-04-20 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
US5001533A (en) * | 1988-12-22 | 1991-03-19 | Kabushiki Kaisha Toshiba | Bipolar transistor with side wall base contacts |
JPH0744186B2 (ja) * | 1989-03-13 | 1995-05-15 | 株式会社東芝 | 半導体装置の製造方法 |
JPH03138946A (ja) * | 1989-10-24 | 1991-06-13 | Sony Corp | 半導体装置 |
US5374846A (en) * | 1990-08-31 | 1994-12-20 | Nec Corporation | Bipolar transistor with a particular base and collector regions |
JPH04361533A (ja) * | 1991-06-10 | 1992-12-15 | Mitsubishi Electric Corp | 半導体集積回路装置の製造方法 |
JPH0521719A (ja) * | 1991-07-11 | 1993-01-29 | Nec Corp | 半導体集積回路装置 |
JP3039166B2 (ja) * | 1992-11-12 | 2000-05-08 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JP2565113B2 (ja) * | 1993-11-01 | 1996-12-18 | 日本電気株式会社 | 半導体装置 |
-
1995
- 1995-12-06 JP JP7344360A patent/JP2907323B2/ja not_active Expired - Lifetime
-
1996
- 1996-12-04 DE DE69615512T patent/DE69615512T2/de not_active Expired - Fee Related
- 1996-12-04 US US08/760,221 patent/US6034412A/en not_active Expired - Fee Related
- 1996-12-04 EP EP96119476A patent/EP0778615B1/de not_active Expired - Lifetime
- 1996-12-05 TW TW085115002A patent/TW315502B/zh active
- 1996-12-06 KR KR1019960062288A patent/KR100338014B1/ko not_active IP Right Cessation
-
1999
- 1999-08-05 US US09/368,529 patent/US6165860A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW315502B (de) | 1997-09-11 |
US6034412A (en) | 2000-03-07 |
US6165860A (en) | 2000-12-26 |
EP0778615A1 (de) | 1997-06-11 |
KR100338014B1 (ko) | 2002-11-23 |
JPH09162192A (ja) | 1997-06-20 |
DE69615512T2 (de) | 2002-05-23 |
EP0778615B1 (de) | 2001-09-26 |
JP2907323B2 (ja) | 1999-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |