DE69613947D1 - Durch heisse Elektroneninjektion programmierbare und durch Tunneleffekt löschbare PMOS-Speicherzelle - Google Patents

Durch heisse Elektroneninjektion programmierbare und durch Tunneleffekt löschbare PMOS-Speicherzelle

Info

Publication number
DE69613947D1
DE69613947D1 DE69613947T DE69613947T DE69613947D1 DE 69613947 D1 DE69613947 D1 DE 69613947D1 DE 69613947 T DE69613947 T DE 69613947T DE 69613947 T DE69613947 T DE 69613947T DE 69613947 D1 DE69613947 D1 DE 69613947D1
Authority
DE
Germany
Prior art keywords
well
floating gate
drain
memory cell
electron injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69613947T
Other languages
English (en)
Other versions
DE69613947T2 (de
Inventor
Shang-De T Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chingis Technology Corp USA
Original Assignee
Programmable Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Programmable Microelectronics Corp filed Critical Programmable Microelectronics Corp
Publication of DE69613947D1 publication Critical patent/DE69613947D1/de
Application granted granted Critical
Publication of DE69613947T2 publication Critical patent/DE69613947T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B41/00Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7884Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885Hot carrier injection from the channel
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B41/00Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42Simultaneous manufacture of periphery and memory cells
    • H10B41/43Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/44Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a control gate layer also being used as part of the peripheral transistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B69/00Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
DE69613947T 1995-11-14 1996-10-09 Durch heisse Elektroneninjektion programmierbare und durch Tunneleffekt löschbare PMOS-Speicherzelle Expired - Fee Related DE69613947T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/557,589 US5687118A (en) 1995-11-14 1995-11-14 PMOS memory cell with hot electron injection programming and tunnelling erasing

Publications (2)

Publication Number Publication Date
DE69613947D1 true DE69613947D1 (de) 2001-08-23
DE69613947T2 DE69613947T2 (de) 2001-11-15

Family

ID=24226069

Family Applications (2)

Application Number Title Priority Date Filing Date
DE0778623T Pending DE778623T1 (de) 1995-11-14 1996-10-09 Durch heisse Elektroneninjektion programmierbare und durch Tunneleffekt löschbare PMOS-Speicherzelle
DE69613947T Expired - Fee Related DE69613947T2 (de) 1995-11-14 1996-10-09 Durch heisse Elektroneninjektion programmierbare und durch Tunneleffekt löschbare PMOS-Speicherzelle

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE0778623T Pending DE778623T1 (de) 1995-11-14 1996-10-09 Durch heisse Elektroneninjektion programmierbare und durch Tunneleffekt löschbare PMOS-Speicherzelle

Country Status (6)

Country Link
US (1) US5687118A (de)
EP (1) EP0778623B1 (de)
JP (1) JP3124936B2 (de)
AT (1) ATE203356T1 (de)
DE (2) DE778623T1 (de)
TW (1) TW287321B (de)

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US5898613A (en) * 1996-07-24 1999-04-27 California Institute Of Technology pMOS analog EEPROM cell
US6965142B2 (en) * 1995-03-07 2005-11-15 Impinj, Inc. Floating-gate semiconductor structures
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Also Published As

Publication number Publication date
DE778623T1 (de) 1998-03-05
US5687118A (en) 1997-11-11
EP0778623A3 (de) 1997-09-03
TW287321B (en) 1996-10-01
JPH09260518A (ja) 1997-10-03
EP0778623B1 (de) 2001-07-18
ATE203356T1 (de) 2001-08-15
DE69613947T2 (de) 2001-11-15
JP3124936B2 (ja) 2001-01-15
EP0778623A2 (de) 1997-06-11

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