CN101770955B - 一种制作p型金属氧化物半导体的方法 - Google Patents
一种制作p型金属氧化物半导体的方法 Download PDFInfo
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- CN101770955B CN101770955B CN2008102470754A CN200810247075A CN101770955B CN 101770955 B CN101770955 B CN 101770955B CN 2008102470754 A CN2008102470754 A CN 2008102470754A CN 200810247075 A CN200810247075 A CN 200810247075A CN 101770955 B CN101770955 B CN 101770955B
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CN2008102470754A CN101770955B (zh) | 2008-12-31 | 2008-12-31 | 一种制作p型金属氧化物半导体的方法 |
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CN2008102470754A CN101770955B (zh) | 2008-12-31 | 2008-12-31 | 一种制作p型金属氧化物半导体的方法 |
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CN101770955A CN101770955A (zh) | 2010-07-07 |
CN101770955B true CN101770955B (zh) | 2011-09-14 |
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Families Citing this family (1)
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CN108807155B (zh) * | 2017-04-28 | 2020-10-30 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US5687118A (en) * | 1995-11-14 | 1997-11-11 | Programmable Microelectronics Corporation | PMOS memory cell with hot electron injection programming and tunnelling erasing |
CN1638132A (zh) * | 2003-12-30 | 2005-07-13 | 得州仪器公司 | Eeprom和闪速eeprom |
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Publication number | Priority date | Publication date | Assignee | Title |
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US5687118A (en) * | 1995-11-14 | 1997-11-11 | Programmable Microelectronics Corporation | PMOS memory cell with hot electron injection programming and tunnelling erasing |
CN1638132A (zh) * | 2003-12-30 | 2005-07-13 | 得州仪器公司 | Eeprom和闪速eeprom |
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Effective date of registration: 20120725 Address after: 518116 Shenzhen city Longgang District Baolong Baolong Industrial City Seven Road No. five, founder Microelectronics Industrial Park Patentee after: Shenzhen Founder Microelectronic Co., Ltd. Address before: 100871 Beijing, Haidian District into the house road, founder of the building on the 9 floor, No. 298 Co-patentee before: Shenzhen Founder Microelectronic Co., Ltd. Patentee before: Peking Founder Group Co., Ltd. |
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