DE69607773T2 - Schaltkreis - Google Patents

Schaltkreis

Info

Publication number
DE69607773T2
DE69607773T2 DE69607773T DE69607773T DE69607773T2 DE 69607773 T2 DE69607773 T2 DE 69607773T2 DE 69607773 T DE69607773 T DE 69607773T DE 69607773 T DE69607773 T DE 69607773T DE 69607773 T2 DE69607773 T2 DE 69607773T2
Authority
DE
Germany
Prior art keywords
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69607773T
Other languages
English (en)
Other versions
DE69607773D1 (de
Inventor
Kazumasa Kohama
Kazuto Kitakubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69607773D1 publication Critical patent/DE69607773D1/de
Application granted granted Critical
Publication of DE69607773T2 publication Critical patent/DE69607773T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
DE69607773T 1995-01-23 1996-01-23 Schaltkreis Expired - Lifetime DE69607773T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7027309A JPH08204530A (ja) 1995-01-23 1995-01-23 スイツチ回路

Publications (2)

Publication Number Publication Date
DE69607773D1 DE69607773D1 (de) 2000-05-25
DE69607773T2 true DE69607773T2 (de) 2000-11-23

Family

ID=12217494

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69607773T Expired - Lifetime DE69607773T2 (de) 1995-01-23 1996-01-23 Schaltkreis

Country Status (4)

Country Link
US (2) US5825227A (de)
EP (1) EP0723338B1 (de)
JP (1) JPH08204530A (de)
DE (1) DE69607773T2 (de)

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US20050205986A1 (en) * 2004-03-18 2005-09-22 Ikuroh Ichitsubo Module with integrated active substrate and passive substrate
JP4321359B2 (ja) * 2004-05-31 2009-08-26 パナソニック株式会社 半導体スイッチ
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US7389090B1 (en) 2004-10-25 2008-06-17 Micro Mobio, Inc. Diplexer circuit for wireless communication devices
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US7580687B2 (en) * 2005-01-19 2009-08-25 Micro Mobio Corporation System-in-package wireless communication device comprising prepackaged power amplifier
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US7548111B2 (en) * 2005-01-19 2009-06-16 Micro Mobio Corporation Miniature dual band power amplifier with reserved pins
JP4763310B2 (ja) * 2005-02-22 2011-08-31 新日本無線株式会社 半導体スイッチ集積回路
JP2006332778A (ja) * 2005-05-23 2006-12-07 Matsushita Electric Ind Co Ltd 高周波スイッチ回路およびこれを用いた半導体装置
US7498862B2 (en) * 2005-05-31 2009-03-03 Texas Instruments Incorporated Switch for handling terminal voltages exceeding control voltage
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US20070063982A1 (en) * 2005-09-19 2007-03-22 Tran Bao Q Integrated rendering of sound and image on a display
US7477204B2 (en) * 2005-12-30 2009-01-13 Micro-Mobio, Inc. Printed circuit board based smart antenna
US7492209B2 (en) 2006-04-17 2009-02-17 Skyworks Solutions, Inc. High-frequency switching device with reduced harmonics
FR2902250A1 (fr) * 2006-06-12 2007-12-14 Thomson Licensing Sas Commutateur et dispositif de commutation a isolation selective pour terminaux multimedias
US7477108B2 (en) * 2006-07-14 2009-01-13 Micro Mobio, Inc. Thermally distributed integrated power amplifier module
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US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
JP2009159059A (ja) * 2007-12-25 2009-07-16 Samsung Electro Mech Co Ltd 高周波スイッチ回路
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US7786822B2 (en) * 2008-05-27 2010-08-31 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Four-state digital attenuator having two-bit control interface
GB2465404A (en) * 2008-11-18 2010-05-19 Iti Scotland Ltd Plural antenna elements with a switching arrangement and method
JP2010220200A (ja) * 2009-02-19 2010-09-30 Renesas Electronics Corp 導通切替回路、導通切替回路ブロック、及び導通切替回路の動作方法
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
CN101938274B (zh) * 2009-06-30 2013-04-24 瀚宇彩晶股份有限公司 集成栅极驱动电路
CN102025357B (zh) * 2009-09-18 2012-06-13 富士迈半导体精密工业（上海）有限公司 放电电路
CN103201954A (zh) * 2010-09-21 2013-07-10 Dsp集团有限公司 Cmos工艺中的rf开关实现方式
CN101997529B (zh) * 2010-09-25 2012-09-12 林松 一种智能型免布线学习码遥控开关
CN102035523B (zh) * 2011-01-12 2012-11-21 上海三基电子工业有限公司 高压大电流电子开关
WO2013081551A1 (en) * 2011-11-28 2013-06-06 Nanyang Technology University Spst switch, spdt switch, spmt switch and communication device using the same
KR20130127782A (ko) * 2012-05-15 2013-11-25 삼성전기주식회사 스위칭 회로 및 이를 포함하는 무선통신 시스템
JP2013247419A (ja) * 2012-05-24 2013-12-09 Fujitsu Ltd 増幅器、送受信器および通信装置
JP5944813B2 (ja) * 2012-11-08 2016-07-05 太陽誘電株式会社 スイッチングデバイスおよびモジュール
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US20150236798A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Methods for Increasing RF Throughput Via Usage of Tunable Filters
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
JP2015170935A (ja) * 2014-03-06 2015-09-28 国立大学法人東北大学 サンプルホールド回路および高周波受信装置
US9654094B2 (en) 2014-03-12 2017-05-16 Kabushiki Kaisha Toshiba Semiconductor switch circuit and semiconductor substrate
US9966987B2 (en) 2014-04-03 2018-05-08 Teko Telecom S.R.L. Radio frequency switching system
US10027366B2 (en) 2014-04-25 2018-07-17 Raytheon Company High power radio frequency (RF) antenna switch
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US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US10097232B2 (en) * 2016-06-08 2018-10-09 Psemi Corporation Apparatus for reducing RF crossover coupling
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Also Published As

Publication number Publication date
EP0723338A2 (de) 1996-07-24
DE69607773D1 (de) 2000-05-25
JPH08204530A (ja) 1996-08-09
EP0723338A3 (de) 1996-12-11
US5969560A (en) 1999-10-19
US5825227A (en) 1998-10-20
EP0723338B1 (de) 2000-04-19

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Legal Events

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