DE69513772D1 - Verfahren zum Ätzen von Siliziumoxid mit hoher Selektivität - Google Patents

Verfahren zum Ätzen von Siliziumoxid mit hoher Selektivität

Info

Publication number
DE69513772D1
DE69513772D1 DE69513772T DE69513772T DE69513772D1 DE 69513772 D1 DE69513772 D1 DE 69513772D1 DE 69513772 T DE69513772 T DE 69513772T DE 69513772 T DE69513772 T DE 69513772T DE 69513772 D1 DE69513772 D1 DE 69513772D1
Authority
DE
Germany
Prior art keywords
silicon oxide
high selectivity
etching silicon
etching
selectivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69513772T
Other languages
English (en)
Other versions
DE69513772T2 (de
Inventor
Jitesh Mehta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FSI INTERNATIONAL CHASKA
Tel Manufacturing and Engineering of America Inc
Original Assignee
FSI INTERNATIONAL CHASKA
FSI International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FSI INTERNATIONAL CHASKA, FSI International Inc filed Critical FSI INTERNATIONAL CHASKA
Publication of DE69513772D1 publication Critical patent/DE69513772D1/de
Application granted granted Critical
Publication of DE69513772T2 publication Critical patent/DE69513772T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Surface Treatment Of Glass (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
DE69513772T 1994-09-28 1995-09-26 Verfahren zum Ätzen von Siliziumoxid mit hoher Selektivität Expired - Fee Related DE69513772T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/314,206 US5635102A (en) 1994-09-28 1994-09-28 Highly selective silicon oxide etching method

Publications (2)

Publication Number Publication Date
DE69513772D1 true DE69513772D1 (de) 2000-01-13
DE69513772T2 DE69513772T2 (de) 2000-06-21

Family

ID=23219016

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69513772T Expired - Fee Related DE69513772T2 (de) 1994-09-28 1995-09-26 Verfahren zum Ätzen von Siliziumoxid mit hoher Selektivität

Country Status (5)

Country Link
US (1) US5635102A (de)
EP (1) EP0704884B1 (de)
JP (1) JPH08319200A (de)
KR (1) KR960011568A (de)
DE (1) DE69513772T2 (de)

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US6126847A (en) * 1997-11-24 2000-10-03 Micron Technology Inc. High selectivity etching process for oxides
US6077776A (en) * 1998-03-18 2000-06-20 Taiwan Semiconductor Manufacturing Company Polysilicon residue free process by thermal treatment
US6740247B1 (en) 1999-02-05 2004-05-25 Massachusetts Institute Of Technology HF vapor phase wafer cleaning and oxide etching
US6010948A (en) * 1999-02-05 2000-01-04 Taiwan Semiconductor Manufacturing Company Shallow trench isolation process employing a BPSG trench fill
US7041224B2 (en) 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US6942811B2 (en) 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
US6960305B2 (en) 1999-10-26 2005-11-01 Reflectivity, Inc Methods for forming and releasing microelectromechanical structures
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
JP2002050767A (ja) * 2000-08-04 2002-02-15 Mitsubishi Electric Corp 半導体装置及びその製造方法
US7019376B2 (en) 2000-08-11 2006-03-28 Reflectivity, Inc Micromirror array device with a small pitch size
US6746615B1 (en) 2000-09-14 2004-06-08 Fsi International, Inc. Methods of achieving selective etching
US6777347B1 (en) 2001-01-19 2004-08-17 Taiwan Semiconductor Manufacturing Company Method to produce porous oxide including forming a precoating oxide and a thermal oxide
US7183201B2 (en) * 2001-07-23 2007-02-27 Applied Materials, Inc. Selective etching of organosilicate films over silicon oxide stop etch layers
US7189332B2 (en) 2001-09-17 2007-03-13 Texas Instruments Incorporated Apparatus and method for detecting an endpoint in a vapor phase etch
US6965468B2 (en) 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US7027200B2 (en) 2002-03-22 2006-04-11 Reflectivity, Inc Etching method used in fabrications of microstructures
US6896821B2 (en) * 2002-08-23 2005-05-24 Dalsa Semiconductor Inc. Fabrication of MEMS devices with spin-on glass
US20050142885A1 (en) * 2002-08-30 2005-06-30 Tokyo Electron Limited Method of etching and etching apparatus
JP4694201B2 (ja) 2002-09-20 2011-06-08 インテグレイテッド ディーエヌエイ テクノロジーズ インコーポレイテッド アントラキノン消光色素、それらの製造方法及び使用
JP2004228150A (ja) * 2003-01-20 2004-08-12 Canon Inc エッチング方法
US6913942B2 (en) 2003-03-28 2005-07-05 Reflectvity, Inc Sacrificial layers for use in fabrications of microelectromechanical devices
US6980347B2 (en) 2003-07-03 2005-12-27 Reflectivity, Inc Micromirror having reduced space between hinge and mirror plate of the micromirror
US20050048742A1 (en) * 2003-08-26 2005-03-03 Tokyo Electron Limited Multiple grow-etch cyclic surface treatment for substrate preparation
US7645704B2 (en) 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures
JP2006167849A (ja) * 2004-12-15 2006-06-29 Denso Corp マイクロ構造体の製造方法
US9431268B2 (en) * 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
US9425041B2 (en) 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
US10211302B2 (en) 2017-06-28 2019-02-19 International Business Machines Corporation Field effect transistor devices having gate contacts formed in active region overlapping source/drain contacts
US10243079B2 (en) 2017-06-30 2019-03-26 International Business Machines Corporation Utilizing multilayer gate spacer to reduce erosion of semiconductor fin during spacer patterning
US10607851B2 (en) 2017-08-25 2020-03-31 Micron Technology, Inc. Vapor-etch cyclic process
WO2019226341A1 (en) 2018-05-25 2019-11-28 Lam Research Corporation Thermal atomic layer etch with rapid temperature cycling
EP3821457A4 (de) 2018-07-09 2022-04-13 Lam Research Corporation Ätzen von atomschichtätzen mittels elektronenanregung
US10734245B2 (en) 2018-10-19 2020-08-04 International Business Machines Corporation Highly selective dry etch process for vertical FET STI recess
US11024512B1 (en) 2020-03-06 2021-06-01 International Business Machines Corporation Selective etch formulation for silicon oxide

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US3511727A (en) 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors
US3669774A (en) 1969-11-20 1972-06-13 Rca Corp Low temperature silicon etch
JPS5211175A (en) 1975-07-18 1977-01-27 Toshiba Corp Activated gas reacting apparatus
JPS5329076A (en) 1976-08-31 1978-03-17 Toshiba Corp Plasma treating apparatus of semiconductor substrates
JPS5920923B2 (ja) 1976-10-08 1984-05-16 呉羽化学工業株式会社 熱風循環式焼却炉
JPS53121469A (en) 1977-03-31 1978-10-23 Toshiba Corp Gas etching unit
US4183780A (en) 1978-08-21 1980-01-15 International Business Machines Corporation Photon enhanced reactive ion etching
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JPS59135730A (ja) 1983-01-24 1984-08-04 Hitachi Ltd 表面改質装置
JPS59207631A (ja) 1983-05-11 1984-11-24 Semiconductor Res Found 光化学を用いたドライプロセス装置
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JPH0642456B2 (ja) 1984-11-21 1994-06-01 株式会社日立製作所 表面光処理方法
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US4687544A (en) 1985-05-17 1987-08-18 Emergent Technologies Corporation Method and apparatus for dry processing of substrates
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US4857140A (en) 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
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US5178682A (en) 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
JPH01319944A (ja) 1988-06-21 1989-12-26 Mitsubishi Electric Corp 半導体基板表面に薄膜を形成する方法およびその装置
DE68927726T2 (de) * 1988-07-20 1997-07-17 Hashimoto Chemical Ind Co Einrichtung zum Trockenätzen mit einem Generator zum Erzeugen von wasserfreiem Flusssäuregas
KR950000662B1 (ko) 1988-11-18 1995-01-27 가부시키가이샤 시바우라 세이사쿠쇼 드라이에칭 방법
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KR930005440B1 (ko) * 1989-10-02 1993-06-21 다이닛뽕 스쿠린 세이소오 가부시키가이샤 절연막의 선택적 제거방법
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US5254176A (en) 1992-02-03 1993-10-19 Tokyo Electron Limited Method of cleaning a process tube
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JP2833946B2 (ja) * 1992-12-08 1998-12-09 日本電気株式会社 エッチング方法および装置
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Also Published As

Publication number Publication date
JPH08319200A (ja) 1996-12-03
US5635102A (en) 1997-06-03
KR960011568A (ko) 1996-04-20
EP0704884A3 (de) 1996-07-17
EP0704884A2 (de) 1996-04-03
EP0704884B1 (de) 1999-12-08
DE69513772T2 (de) 2000-06-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee