DE3751333D1 - Verfahren zum Entfernen von Photoresists auf Halbleitersubstraten. - Google Patents

Verfahren zum Entfernen von Photoresists auf Halbleitersubstraten.

Info

Publication number
DE3751333D1
DE3751333D1 DE3751333T DE3751333T DE3751333D1 DE 3751333 D1 DE3751333 D1 DE 3751333D1 DE 3751333 T DE3751333 T DE 3751333T DE 3751333 T DE3751333 T DE 3751333T DE 3751333 D1 DE3751333 D1 DE 3751333D1
Authority
DE
Germany
Prior art keywords
semiconductor substrates
removing photoresists
photoresists
substrates
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3751333T
Other languages
English (en)
Other versions
DE3751333T2 (de
Inventor
Shuzo Fujitsu Limited Fujimura
Yasunari Fujitsu Limite Motoki
Yoshikazu Fujitsu Limited Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3751333D1 publication Critical patent/DE3751333D1/de
Application granted granted Critical
Publication of DE3751333T2 publication Critical patent/DE3751333T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE3751333T 1986-02-14 1987-02-09 Verfahren zum Entfernen von Photoresists auf Halbleitersubstraten. Expired - Fee Related DE3751333T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61030327A JPH0773104B2 (ja) 1986-02-14 1986-02-14 レジスト剥離方法

Publications (2)

Publication Number Publication Date
DE3751333D1 true DE3751333D1 (de) 1995-07-13
DE3751333T2 DE3751333T2 (de) 1995-10-19

Family

ID=12300714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3751333T Expired - Fee Related DE3751333T2 (de) 1986-02-14 1987-02-09 Verfahren zum Entfernen von Photoresists auf Halbleitersubstraten.

Country Status (5)

Country Link
US (1) US4938839A (de)
EP (1) EP0234387B1 (de)
JP (1) JPH0773104B2 (de)
KR (1) KR900003256B1 (de)
DE (1) DE3751333T2 (de)

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JPS6445123A (en) * 1987-08-14 1989-02-17 Hitachi Ltd Method and apparatus for ashing
EP0305946B1 (de) * 1987-08-28 1996-10-30 Kabushiki Kaisha Toshiba Plasma-Entschichtungsverfahren für organische und anorganische Schichten
JP2785027B2 (ja) * 1989-01-10 1998-08-13 日本真空技術株式会社 プラズマアッシング方法
KR900013595A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 플라즈마 에칭방법 및 장치
EP0397315B1 (de) * 1989-05-08 1995-03-01 Applied Materials, Inc. Verfahren und Vorrichtung zum Erwärmen und Kühlen von Plättchen in einer Halbleiterplättchenbearbeitungseinrichtung
JPH031530A (ja) * 1989-05-29 1991-01-08 Tokuda Seisakusho Ltd ドライエッチング装置
US5378317A (en) * 1990-10-09 1995-01-03 Chlorine Engineers Corp., Ltd. Method for removing organic film
JPH04352157A (ja) * 1991-05-30 1992-12-07 Toyota Autom Loom Works Ltd レジスト除去方法
JPH06177088A (ja) * 1992-08-31 1994-06-24 Sony Corp アッシング方法及びアッシング装置
JP3391410B2 (ja) * 1993-09-17 2003-03-31 富士通株式会社 レジストマスクの除去方法
KR0126801B1 (ko) * 1993-12-22 1998-04-02 김광호 반도체 장치의 배선 형성방법
US5646814A (en) 1994-07-15 1997-07-08 Applied Materials, Inc. Multi-electrode electrostatic chuck
US5592358A (en) 1994-07-18 1997-01-07 Applied Materials, Inc. Electrostatic chuck for magnetic flux processing
JPH08186098A (ja) * 1994-12-27 1996-07-16 Ryoden Semiconductor Syst Eng Kk 感光性樹脂の除去方法および除去装置
US6323168B1 (en) * 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
WO1998022568A1 (en) * 1996-11-22 1998-05-28 Advanced Chemical Systems International, Inc. Stripping formulation including catechol, hydroxylamine, non-alkanolamine, water for post plasma ashed wafer cleaning
US5972796A (en) * 1996-12-12 1999-10-26 Texas Instruments Incorporated In-situ barc and nitride etch process
US6024887A (en) * 1997-06-03 2000-02-15 Taiwan Semiconductor Manufacturing Company Plasma method for stripping ion implanted photoresist layers
US6536449B1 (en) 1997-11-17 2003-03-25 Mattson Technology Inc. Downstream surface cleaning process
US6080680A (en) * 1997-12-19 2000-06-27 Lam Research Corporation Method and composition for dry etching in semiconductor fabrication
TW434877B (en) 1998-12-03 2001-05-16 Matsushita Electronics Corp Semiconductor memory device and method for manufacturing the same
US6420251B1 (en) * 1999-01-05 2002-07-16 Trw Inc. Method for fabricating a microelectronic integrated circuit with improved step coverage
US6309976B1 (en) * 1999-03-22 2001-10-30 Taiwan Semiconductor Manufacturing Company Critical dimension controlled method of plasma descum for conventional quarter micron and smaller dimension binary mask manufacture
US6805139B1 (en) 1999-10-20 2004-10-19 Mattson Technology, Inc. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US20050022839A1 (en) * 1999-10-20 2005-02-03 Savas Stephen E. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US7270724B2 (en) 2000-12-13 2007-09-18 Uvtech Systems, Inc. Scanning plasma reactor
US6524936B2 (en) 2000-12-22 2003-02-25 Axcelis Technologies, Inc. Process for removal of photoresist after post ion implantation
US6773683B2 (en) * 2001-01-08 2004-08-10 Uvtech Systems, Inc. Photocatalytic reactor system for treating flue effluents
TWI226059B (en) * 2001-06-11 2005-01-01 Sony Corp Method for manufacturing master disk for optical recording medium having pits and projections, stamper, and optical recording medium
TW508648B (en) * 2001-12-11 2002-11-01 United Microelectronics Corp Method of reducing the chamber particle level
US6720132B2 (en) * 2002-01-08 2004-04-13 Taiwan Semiconductor Manufacturing Co., Ltd. Bi-layer photoresist dry development and reactive ion etch method
US7067235B2 (en) * 2002-01-15 2006-06-27 Ming Huan Tsai Bi-layer photoresist dry development and reactive ion etch method
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US20070054492A1 (en) * 2004-06-17 2007-03-08 Elliott David J Photoreactive removal of ion implanted resist
US20110061679A1 (en) * 2004-06-17 2011-03-17 Uvtech Systems, Inc. Photoreactive Removal of Ion Implanted Resist
US20070186953A1 (en) * 2004-07-12 2007-08-16 Savas Stephen E Systems and Methods for Photoresist Strip and Residue Treatment in Integrated Circuit Manufacturing
KR100814409B1 (ko) * 2006-08-14 2008-03-18 삼성전자주식회사 애싱 방법 및 이를 수행하기 위한 장치
US20080156264A1 (en) 2006-12-27 2008-07-03 Novellus Systems, Inc. Plasma Generator Apparatus
US20080156631A1 (en) * 2006-12-27 2008-07-03 Novellus Systems, Inc. Methods of Producing Plasma in a Container
US9591738B2 (en) * 2008-04-03 2017-03-07 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
US8916022B1 (en) 2008-09-12 2014-12-23 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226274B2 (de) * 1973-01-25 1977-07-13
JPS53112065A (en) * 1977-03-11 1978-09-30 Toshiba Corp Removing method of high molecular compound
US4292384A (en) * 1977-09-30 1981-09-29 Horizons Research Incorporated Gaseous plasma developing and etching process employing low voltage DC generation
US4264393A (en) * 1977-10-31 1981-04-28 Motorola, Inc. Reactor apparatus for plasma etching or deposition
US4241165A (en) * 1978-09-05 1980-12-23 Motorola, Inc. Plasma development process for photoresist
JPS5766642A (en) * 1980-10-09 1982-04-22 Mitsubishi Electric Corp Plasma etching device
JPS5796529A (en) * 1980-12-09 1982-06-15 Fujitsu Ltd Microwave plasma treating method
JPS58153332A (ja) * 1982-03-08 1983-09-12 Mitsubishi Electric Corp ドライエツチング装置
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
US4522681A (en) * 1984-04-23 1985-06-11 General Electric Company Method for tapered dry etching
US4673456A (en) * 1985-09-17 1987-06-16 Machine Technology, Inc. Microwave apparatus for generating plasma afterglows

Also Published As

Publication number Publication date
DE3751333T2 (de) 1995-10-19
JPH0773104B2 (ja) 1995-08-02
KR900003256B1 (ko) 1990-05-12
EP0234387B1 (de) 1995-06-07
US4938839A (en) 1990-07-03
KR870008379A (ko) 1987-09-26
JPS62208636A (ja) 1987-09-12
EP0234387A3 (en) 1989-02-01
EP0234387A2 (de) 1987-09-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee