DE69333843D1 - Ätzverfahren für Silizium-Substrat - Google Patents

Ätzverfahren für Silizium-Substrat

Info

Publication number
DE69333843D1
DE69333843D1 DE69333843T DE69333843T DE69333843D1 DE 69333843 D1 DE69333843 D1 DE 69333843D1 DE 69333843 T DE69333843 T DE 69333843T DE 69333843 T DE69333843 T DE 69333843T DE 69333843 D1 DE69333843 D1 DE 69333843D1
Authority
DE
Germany
Prior art keywords
silicon substrate
etching process
etching
silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69333843T
Other languages
English (en)
Other versions
DE69333843T2 (de
Inventor
Junji Manaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Seiki Co Ltd
Original Assignee
Ricoh Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Seiki Co Ltd filed Critical Ricoh Seiki Co Ltd
Application granted granted Critical
Publication of DE69333843D1 publication Critical patent/DE69333843D1/de
Publication of DE69333843T2 publication Critical patent/DE69333843T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00142—Bridges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00626—Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching
DE69333843T 1992-10-23 1993-10-22 Ätzverfahren für Silizium-Substrat Expired - Lifetime DE69333843T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30940692 1992-10-23
JP30940692A JP3333560B2 (ja) 1992-10-23 1992-10-23 シリコン基板のエッチング方法

Publications (2)

Publication Number Publication Date
DE69333843D1 true DE69333843D1 (de) 2005-08-25
DE69333843T2 DE69333843T2 (de) 2006-04-27

Family

ID=17992630

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69329369T Expired - Lifetime DE69329369T2 (de) 1992-10-23 1993-10-22 Verfahren zum Ätzen eines Silizium-Substrats
DE69333843T Expired - Lifetime DE69333843T2 (de) 1992-10-23 1993-10-22 Ätzverfahren für Silizium-Substrat

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69329369T Expired - Lifetime DE69329369T2 (de) 1992-10-23 1993-10-22 Verfahren zum Ätzen eines Silizium-Substrats

Country Status (5)

Country Link
US (2) US5683546A (de)
EP (2) EP0878835B1 (de)
JP (1) JP3333560B2 (de)
DE (2) DE69329369T2 (de)
FI (1) FI934674A (de)

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JP3333560B2 (ja) * 1992-10-23 2002-10-15 リコーエレメックス株式会社 シリコン基板のエッチング方法
FR2736654B1 (fr) * 1995-07-13 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'elements de microstructures flottants rigides et dispositif equipe de tels elements
US5935451A (en) * 1997-02-24 1999-08-10 Lucent Technologies Inc. Fabrication of etched features
DE19716480B4 (de) * 1997-04-19 2004-03-25 Micronas Semiconductor Holding Ag Verfahren zum Herstellen einer Vorrichtung mit einem Hohlraum zur Aufnahme eines Lichtwellenleiters
US6093330A (en) * 1997-06-02 2000-07-25 Cornell Research Foundation, Inc. Microfabrication process for enclosed microstructures
SG96541A1 (en) * 1997-08-14 2003-06-16 Inst Of Microelectronics Design of a novel tactile sensor
US6287885B1 (en) * 1998-05-08 2001-09-11 Denso Corporation Method for manufacturing semiconductor dynamic quantity sensor
EP1130631A1 (de) * 2000-02-29 2001-09-05 STMicroelectronics S.r.l. Herstellungsverfahren eines vergrabenen Hohlraumes in einer Halbleiterscheibe
ATE375865T1 (de) 2001-08-10 2007-11-15 Canon Kk Verfahren zur herstellung eines flüssigkeitsausstosskopfes, substrat für einen flüssigkeitsausstosskopf und dazugehöriges herstellungsverfahren
US7045407B2 (en) * 2003-12-30 2006-05-16 Intel Corporation Amorphous etch stop for the anisotropic etching of substrates
DE102005023059A1 (de) * 2005-05-19 2006-11-23 Austriamicrosystems Ag Verfahren zum Herstellen eines mikromechanischen Strukturelementes und Halbleiteranordnung
EP2072076A1 (de) 2007-12-17 2009-06-24 Debiotech S.A. Herstellungsverfahren für Mikronadeln für den Außenbereich eines Flugzeugs
JP5733616B2 (ja) * 2011-04-21 2015-06-10 住友電工デバイス・イノベーション株式会社 半導体装置
TWI478233B (zh) * 2011-09-09 2015-03-21 Univ Nat Kaohsiung Applied Sci Preparation of Single Crystal Silicon Plate with Suspension Layer and Its Structure and Micro - heater
CN103145094B (zh) * 2013-03-21 2016-02-10 江苏物联网研究发展中心 形成mems热电堆探测器空腔结构的体硅微加工方法
RU2582903C1 (ru) * 2015-02-25 2016-04-27 Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт автоматики им. Н.Л. Духова" (ФГУП "ВНИИА") Способ защиты углов трёхмерных микромеханических структур на кремниевой пластине при глубинном анизотропном травлении
US10431866B2 (en) * 2017-09-15 2019-10-01 International Business Machines Corporation Microfabricated air bridges for planar microwave resonator circuits

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US3728179A (en) * 1970-05-20 1973-04-17 Radiation Inc Method of etching silicon crystals
US4141765A (en) * 1975-02-17 1979-02-27 Siemens Aktiengesellschaft Process for the production of extremely flat silicon troughs by selective etching with subsequent rate controlled epitaxial refill
JPS524337A (en) * 1975-06-28 1977-01-13 Kiyouraku Sangyo Kk Ball circulating device of pachinko play machine row
JPS5243370A (en) * 1975-10-01 1977-04-05 Hitachi Ltd Method of forming depression in semiconductor substrate
JPS5312037A (en) * 1976-07-20 1978-02-03 Hitachi Maxell Silver oxide *2* battery
JPS5351970A (en) * 1976-10-21 1978-05-11 Toshiba Corp Manufacture for semiconductor substrate
JPS53120376A (en) * 1977-03-30 1978-10-20 Fujitsu Ltd Production of semiconductor device
US4147564A (en) * 1977-11-18 1979-04-03 Sri International Method of controlled surface texturization of crystalline semiconductor material
JPS5710073A (en) * 1980-06-20 1982-01-19 Hitachi Ltd Open show case
JPS5758356A (en) * 1980-09-26 1982-04-08 Toshiba Corp Manufacture of semiconductor device
JPS57100734A (en) * 1980-12-15 1982-06-23 Fujitsu Ltd Etching method for semiconductor substrate
JPS5815102A (ja) * 1981-07-20 1983-01-28 Ii R C:Kk 連珠の同定方法
JPS58151027A (ja) * 1982-03-03 1983-09-08 Hitachi Ltd エツチング方法
JPS6021884A (ja) * 1983-07-18 1985-02-04 松下電器産業株式会社 バ−ナ
US4496322A (en) * 1983-05-11 1985-01-29 University Of Toronto Innovations Foundation Benzoin antimicrobial dental varnishes
JPS6031232A (ja) * 1983-07-29 1985-02-18 Toshiba Corp 半導体基体の製造方法
JPS6041232A (ja) * 1983-08-17 1985-03-04 Fujitsu Ltd 半導体装置の製造方法
JPS60128622A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd エツチング法
JPS60218848A (ja) * 1984-04-13 1985-11-01 Fujitsu Ltd 結晶基板のエツチング法
JPS6117113A (ja) * 1984-07-02 1986-01-25 Minolta Camera Co Ltd 全長の短い写真用レンズ
JPS61171139A (ja) * 1985-01-24 1986-08-01 Mitsubishi Electric Corp 半導体装置の製造方法
US4773034A (en) * 1985-05-09 1988-09-20 American Telephone And Telegraph Company Adaptive equalizer utilizing a plurality of multiplier-accumulator devices
JPS6220863A (ja) * 1985-07-17 1987-01-29 Mitsubishi Metal Corp 切削工具用表面被覆高速度鋼部材の製造方法
JPS62109323A (ja) * 1985-11-07 1987-05-20 Oki Electric Ind Co Ltd フツ化物のエツチング方法
JPS62208634A (ja) * 1986-03-07 1987-09-12 Mitsubishi Electric Corp 半導体基板への凹部形成方法
US4682503A (en) * 1986-05-16 1987-07-28 Honeywell Inc. Microscopic size, thermal conductivity type, air or gas absolute pressure sensor
US4982263A (en) * 1987-12-21 1991-01-01 Texas Instruments Incorporated Anodizable strain layer for SOI semiconductor structures
US4808260A (en) * 1988-02-05 1989-02-28 Ford Motor Company Directional aperture etched in silicon
JPH01239935A (ja) * 1988-03-22 1989-09-25 Mitsubishi Electric Corp エツチング方法
US5283201A (en) * 1988-05-17 1994-02-01 Advanced Power Technology, Inc. High density power device fabrication process
JPH0814783B2 (ja) * 1988-06-27 1996-02-14 横河電機株式会社 アナログ入出力装置
US5594172A (en) * 1989-06-21 1997-01-14 Nissan Motor Co., Ltd. Semiconductor accelerometer having a cantilevered beam with a triangular or pentagonal cross section
DE4000496A1 (de) * 1989-08-17 1991-02-21 Bosch Gmbh Robert Verfahren zur strukturierung eines halbleiterkoerpers
DE4020724A1 (de) * 1990-06-29 1992-01-02 Bosch Gmbh Robert Verfahren zur strukturierung eines einkristallinen silizium-traegers
DE4037202A1 (de) * 1990-11-22 1992-05-27 Asea Brown Boveri Verfahren zum herstellen von graeben in einem einkristallinen siliziumkoerper
DE4106933B4 (de) * 1991-03-05 2004-12-16 Robert Bosch Gmbh Strukturierungsverfahren
DE4134291A1 (de) * 1991-10-17 1993-04-22 Bosch Gmbh Robert Verfahren zur exakten ausrichtung von masken zum anisotropen aetzen von dreidimensionalen strukturen aus siliziumwafern
US5286343A (en) * 1992-07-24 1994-02-15 Regents Of The University Of California Method for protecting chip corners in wet chemical etching of wafers
JP3333560B2 (ja) * 1992-10-23 2002-10-15 リコーエレメックス株式会社 シリコン基板のエッチング方法
DE4332653C1 (de) * 1993-09-24 1994-09-01 Hahn Schickard Ges Monolithisch integriertes Halbleiterelement, dessen Verwendung sowie Verfahren zur Herstellung eines solchen Halbleiterelementes

Also Published As

Publication number Publication date
EP0597302B1 (de) 2000-09-06
JPH06140641A (ja) 1994-05-20
DE69329369T2 (de) 2001-03-29
JP3333560B2 (ja) 2002-10-15
EP0597302A3 (de) 1996-04-10
US5888761A (en) 1999-03-30
FI934674A0 (fi) 1993-10-22
EP0878835B1 (de) 2005-07-20
DE69333843T2 (de) 2006-04-27
EP0597302A2 (de) 1994-05-18
US5683546A (en) 1997-11-04
FI934674A (fi) 1994-04-24
DE69329369D1 (de) 2000-10-12
EP0878835A1 (de) 1998-11-18

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Legal Events

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