FI934674A - Etsfoerfarande foer kiselsubstrat - Google Patents
Etsfoerfarande foer kiselsubstrat Download PDFInfo
- Publication number
- FI934674A FI934674A FI934674A FI934674A FI934674A FI 934674 A FI934674 A FI 934674A FI 934674 A FI934674 A FI 934674A FI 934674 A FI934674 A FI 934674A FI 934674 A FI934674 A FI 934674A
- Authority
- FI
- Finland
- Prior art keywords
- kiselsubstrat
- etsfoerfarande
- foer
- foer kiselsubstrat
- etsfoerfarande foer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00626—Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0315—Cavities
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/924—To facilitate selective etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Pressure Sensors (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
- Micromachines (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30940692A JP3333560B2 (ja) | 1992-10-23 | 1992-10-23 | シリコン基板のエッチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FI934674A0 FI934674A0 (fi) | 1993-10-22 |
FI934674A true FI934674A (fi) | 1994-04-24 |
Family
ID=17992630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI934674A FI934674A (fi) | 1992-10-23 | 1993-10-22 | Etsfoerfarande foer kiselsubstrat |
Country Status (5)
Country | Link |
---|---|
US (2) | US5683546A (fi) |
EP (2) | EP0597302B1 (fi) |
JP (1) | JP3333560B2 (fi) |
DE (2) | DE69333843T2 (fi) |
FI (1) | FI934674A (fi) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3333560B2 (ja) * | 1992-10-23 | 2002-10-15 | リコーエレメックス株式会社 | シリコン基板のエッチング方法 |
FR2736654B1 (fr) * | 1995-07-13 | 1997-08-22 | Commissariat Energie Atomique | Procede de fabrication d'elements de microstructures flottants rigides et dispositif equipe de tels elements |
US5935451A (en) * | 1997-02-24 | 1999-08-10 | Lucent Technologies Inc. | Fabrication of etched features |
DE19716480B4 (de) * | 1997-04-19 | 2004-03-25 | Micronas Semiconductor Holding Ag | Verfahren zum Herstellen einer Vorrichtung mit einem Hohlraum zur Aufnahme eines Lichtwellenleiters |
US6093330A (en) * | 1997-06-02 | 2000-07-25 | Cornell Research Foundation, Inc. | Microfabrication process for enclosed microstructures |
SG96541A1 (en) * | 1997-08-14 | 2003-06-16 | Inst Of Microelectronics | Design of a novel tactile sensor |
US6287885B1 (en) | 1998-05-08 | 2001-09-11 | Denso Corporation | Method for manufacturing semiconductor dynamic quantity sensor |
EP1130631A1 (en) * | 2000-02-29 | 2001-09-05 | STMicroelectronics S.r.l. | Process for forming a buried cavity in a semiconductor material wafer |
DE60222969T2 (de) * | 2001-08-10 | 2008-07-24 | Canon K.K. | Verfahren zur Herstellung eines Flüssigkeitsausstosskopfes, Substrat für einen Flüssigkeitsausstosskopf und dazugehöriges Herstellungsverfahren |
US7045407B2 (en) * | 2003-12-30 | 2006-05-16 | Intel Corporation | Amorphous etch stop for the anisotropic etching of substrates |
DE102005023059A1 (de) * | 2005-05-19 | 2006-11-23 | Austriamicrosystems Ag | Verfahren zum Herstellen eines mikromechanischen Strukturelementes und Halbleiteranordnung |
EP2072076A1 (en) | 2007-12-17 | 2009-06-24 | Debiotech S.A. | Out-of-plane microneedle manufacturing process |
JP5733616B2 (ja) * | 2011-04-21 | 2015-06-10 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
TWI478233B (zh) * | 2011-09-09 | 2015-03-21 | Univ Nat Kaohsiung Applied Sci | Preparation of Single Crystal Silicon Plate with Suspension Layer and Its Structure and Micro - heater |
CN103145094B (zh) * | 2013-03-21 | 2016-02-10 | 江苏物联网研究发展中心 | 形成mems热电堆探测器空腔结构的体硅微加工方法 |
RU2582903C1 (ru) * | 2015-02-25 | 2016-04-27 | Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт автоматики им. Н.Л. Духова" (ФГУП "ВНИИА") | Способ защиты углов трёхмерных микромеханических структур на кремниевой пластине при глубинном анизотропном травлении |
US10431866B2 (en) * | 2017-09-15 | 2019-10-01 | International Business Machines Corporation | Microfabricated air bridges for planar microwave resonator circuits |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3728179A (en) * | 1970-05-20 | 1973-04-17 | Radiation Inc | Method of etching silicon crystals |
US4141765A (en) * | 1975-02-17 | 1979-02-27 | Siemens Aktiengesellschaft | Process for the production of extremely flat silicon troughs by selective etching with subsequent rate controlled epitaxial refill |
JPS524337A (en) * | 1975-06-28 | 1977-01-13 | Kiyouraku Sangyo Kk | Ball circulating device of pachinko play machine row |
JPS5243370A (en) * | 1975-10-01 | 1977-04-05 | Hitachi Ltd | Method of forming depression in semiconductor substrate |
JPS5312037A (en) * | 1976-07-20 | 1978-02-03 | Hitachi Maxell | Silver oxide *2* battery |
JPS5351970A (en) * | 1976-10-21 | 1978-05-11 | Toshiba Corp | Manufacture for semiconductor substrate |
JPS53120376A (en) * | 1977-03-30 | 1978-10-20 | Fujitsu Ltd | Production of semiconductor device |
US4147564A (en) * | 1977-11-18 | 1979-04-03 | Sri International | Method of controlled surface texturization of crystalline semiconductor material |
JPS5710073A (en) * | 1980-06-20 | 1982-01-19 | Hitachi Ltd | Open show case |
JPS5758356A (en) * | 1980-09-26 | 1982-04-08 | Toshiba Corp | Manufacture of semiconductor device |
JPS57100734A (en) * | 1980-12-15 | 1982-06-23 | Fujitsu Ltd | Etching method for semiconductor substrate |
JPS5815102A (ja) * | 1981-07-20 | 1983-01-28 | Ii R C:Kk | 連珠の同定方法 |
JPS58151027A (ja) * | 1982-03-03 | 1983-09-08 | Hitachi Ltd | エツチング方法 |
JPS6021884A (ja) * | 1983-07-18 | 1985-02-04 | 松下電器産業株式会社 | バ−ナ |
US4496322A (en) * | 1983-05-11 | 1985-01-29 | University Of Toronto Innovations Foundation | Benzoin antimicrobial dental varnishes |
JPS6031232A (ja) * | 1983-07-29 | 1985-02-18 | Toshiba Corp | 半導体基体の製造方法 |
JPS6041232A (ja) * | 1983-08-17 | 1985-03-04 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS60128622A (ja) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | エツチング法 |
JPS60218848A (ja) * | 1984-04-13 | 1985-11-01 | Fujitsu Ltd | 結晶基板のエツチング法 |
JPS6117113A (ja) * | 1984-07-02 | 1986-01-25 | Minolta Camera Co Ltd | 全長の短い写真用レンズ |
JPS61171139A (ja) * | 1985-01-24 | 1986-08-01 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US4773034A (en) * | 1985-05-09 | 1988-09-20 | American Telephone And Telegraph Company | Adaptive equalizer utilizing a plurality of multiplier-accumulator devices |
JPS6220863A (ja) * | 1985-07-17 | 1987-01-29 | Mitsubishi Metal Corp | 切削工具用表面被覆高速度鋼部材の製造方法 |
JPS62109323A (ja) * | 1985-11-07 | 1987-05-20 | Oki Electric Ind Co Ltd | フツ化物のエツチング方法 |
JPS62208634A (ja) * | 1986-03-07 | 1987-09-12 | Mitsubishi Electric Corp | 半導体基板への凹部形成方法 |
US4682503A (en) * | 1986-05-16 | 1987-07-28 | Honeywell Inc. | Microscopic size, thermal conductivity type, air or gas absolute pressure sensor |
US4982263A (en) * | 1987-12-21 | 1991-01-01 | Texas Instruments Incorporated | Anodizable strain layer for SOI semiconductor structures |
US4808260A (en) * | 1988-02-05 | 1989-02-28 | Ford Motor Company | Directional aperture etched in silicon |
JPH01239935A (ja) * | 1988-03-22 | 1989-09-25 | Mitsubishi Electric Corp | エツチング方法 |
US5283201A (en) * | 1988-05-17 | 1994-02-01 | Advanced Power Technology, Inc. | High density power device fabrication process |
JPH0814783B2 (ja) * | 1988-06-27 | 1996-02-14 | 横河電機株式会社 | アナログ入出力装置 |
US5594172A (en) * | 1989-06-21 | 1997-01-14 | Nissan Motor Co., Ltd. | Semiconductor accelerometer having a cantilevered beam with a triangular or pentagonal cross section |
DE4000496A1 (de) * | 1989-08-17 | 1991-02-21 | Bosch Gmbh Robert | Verfahren zur strukturierung eines halbleiterkoerpers |
DE4020724A1 (de) * | 1990-06-29 | 1992-01-02 | Bosch Gmbh Robert | Verfahren zur strukturierung eines einkristallinen silizium-traegers |
DE4037202A1 (de) * | 1990-11-22 | 1992-05-27 | Asea Brown Boveri | Verfahren zum herstellen von graeben in einem einkristallinen siliziumkoerper |
DE4106933B4 (de) * | 1991-03-05 | 2004-12-16 | Robert Bosch Gmbh | Strukturierungsverfahren |
DE4134291A1 (de) * | 1991-10-17 | 1993-04-22 | Bosch Gmbh Robert | Verfahren zur exakten ausrichtung von masken zum anisotropen aetzen von dreidimensionalen strukturen aus siliziumwafern |
US5286343A (en) * | 1992-07-24 | 1994-02-15 | Regents Of The University Of California | Method for protecting chip corners in wet chemical etching of wafers |
JP3333560B2 (ja) * | 1992-10-23 | 2002-10-15 | リコーエレメックス株式会社 | シリコン基板のエッチング方法 |
DE4332653C1 (de) * | 1993-09-24 | 1994-09-01 | Hahn Schickard Ges | Monolithisch integriertes Halbleiterelement, dessen Verwendung sowie Verfahren zur Herstellung eines solchen Halbleiterelementes |
-
1992
- 1992-10-23 JP JP30940692A patent/JP3333560B2/ja not_active Expired - Fee Related
-
1993
- 1993-10-22 DE DE69333843T patent/DE69333843T2/de not_active Expired - Lifetime
- 1993-10-22 EP EP93117176A patent/EP0597302B1/en not_active Expired - Lifetime
- 1993-10-22 US US08/139,696 patent/US5683546A/en not_active Expired - Lifetime
- 1993-10-22 EP EP98111343A patent/EP0878835B1/en not_active Expired - Lifetime
- 1993-10-22 DE DE69329369T patent/DE69329369T2/de not_active Expired - Lifetime
- 1993-10-22 FI FI934674A patent/FI934674A/fi not_active Application Discontinuation
-
1997
- 1997-08-12 US US08/909,820 patent/US5888761A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69329369D1 (de) | 2000-10-12 |
DE69333843D1 (de) | 2005-08-25 |
EP0597302B1 (en) | 2000-09-06 |
DE69333843T2 (de) | 2006-04-27 |
FI934674A0 (fi) | 1993-10-22 |
EP0878835A1 (en) | 1998-11-18 |
US5683546A (en) | 1997-11-04 |
US5888761A (en) | 1999-03-30 |
EP0878835B1 (en) | 2005-07-20 |
JPH06140641A (ja) | 1994-05-20 |
EP0597302A3 (en) | 1996-04-10 |
EP0597302A2 (en) | 1994-05-18 |
JP3333560B2 (ja) | 2002-10-15 |
DE69329369T2 (de) | 2001-03-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD | Application lapsed |