DE68922054D1 - Verfahren zum Stabilisieren von amorphen Halbleitern. - Google Patents
Verfahren zum Stabilisieren von amorphen Halbleitern.Info
- Publication number
- DE68922054D1 DE68922054D1 DE68922054T DE68922054T DE68922054D1 DE 68922054 D1 DE68922054 D1 DE 68922054D1 DE 68922054 T DE68922054 T DE 68922054T DE 68922054 T DE68922054 T DE 68922054T DE 68922054 D1 DE68922054 D1 DE 68922054D1
- Authority
- DE
- Germany
- Prior art keywords
- amorphous semiconductors
- stabilizing amorphous
- stabilizing
- semiconductors
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000000087 stabilizing effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
- H01L31/03767—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table presenting light-induced characteristic variations, e.g. Staebler-Wronski effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S136/00—Batteries: thermoelectric and photoelectric
- Y10S136/29—Testing, calibrating, treating, e.g. aging
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24845188 | 1988-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68922054D1 true DE68922054D1 (de) | 1995-05-11 |
DE68922054T2 DE68922054T2 (de) | 1995-08-03 |
Family
ID=17178328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68922054T Expired - Fee Related DE68922054T2 (de) | 1988-09-30 | 1989-09-28 | Verfahren zum Stabilisieren von amorphen Halbleitern. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4965225A (de) |
EP (1) | EP0361481B1 (de) |
AU (3) | AU4238589A (de) |
CA (1) | CA1311861C (de) |
DE (1) | DE68922054T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU631436B2 (en) * | 1989-06-28 | 1992-11-26 | Mitsui Toatsu Chemicals Inc. | Semiconductor film and process for its production |
JPH04299578A (ja) * | 1991-03-27 | 1992-10-22 | Canon Inc | 光電変換素子及び薄膜半導体装置 |
US5372836A (en) * | 1992-03-27 | 1994-12-13 | Tokyo Electron Limited | Method of forming polycrystalling silicon film in process of manufacturing LCD |
JP2833545B2 (ja) * | 1995-03-06 | 1998-12-09 | 日本電気株式会社 | 半導体装置の製造方法 |
DE19530577B4 (de) * | 1995-08-19 | 2005-03-10 | Conti Temic Microelectronic | Gehäuse für mikroelektronische Bauelemente und Verfahren zu seiner Herstellung |
US6743974B2 (en) | 2001-05-08 | 2004-06-01 | Massachusetts Institute Of Technology | Silicon solar cell with germanium backside solar cell |
US7255899B2 (en) * | 2001-11-12 | 2007-08-14 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus and heat treatment method of substrate |
US10060180B2 (en) | 2010-01-16 | 2018-08-28 | Cardinal Cg Company | Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology |
US10000411B2 (en) | 2010-01-16 | 2018-06-19 | Cardinal Cg Company | Insulating glass unit transparent conductivity and low emissivity coating technology |
US10000965B2 (en) | 2010-01-16 | 2018-06-19 | Cardinal Cg Company | Insulating glass unit transparent conductive coating technology |
DE102018001057A1 (de) * | 2018-02-07 | 2019-08-08 | Aic Hörmann Gmbh & Co. Kg | Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Ermitterschicht einer Siliziumsolarzelle |
US11028012B2 (en) | 2018-10-31 | 2021-06-08 | Cardinal Cg Company | Low solar heat gain coatings, laminated glass assemblies, and methods of producing same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2030766A (en) * | 1978-09-02 | 1980-04-10 | Plessey Co Ltd | Laser treatment of semiconductor material |
US4181538A (en) * | 1978-09-26 | 1980-01-01 | The United States Of America As Represented By The United States Department Of Energy | Method for making defect-free zone by laser-annealing of doped silicon |
JPS56122123A (en) * | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
JPS61198668A (ja) * | 1985-02-27 | 1986-09-03 | Toshiba Corp | イメ−ジセンサの製造方法 |
EP0211634B1 (de) * | 1985-08-02 | 1994-03-23 | Sel Semiconductor Energy Laboratory Co., Ltd. | Verfahren und Gerät zur Herstellung von Halbleitervorrichtungen |
JP2660243B2 (ja) * | 1985-08-08 | 1997-10-08 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
-
1989
- 1989-09-28 US US07/413,916 patent/US4965225A/en not_active Expired - Lifetime
- 1989-09-28 CA CA000614058A patent/CA1311861C/en not_active Expired - Fee Related
- 1989-09-28 DE DE68922054T patent/DE68922054T2/de not_active Expired - Fee Related
- 1989-09-28 EP EP89117974A patent/EP0361481B1/de not_active Expired - Lifetime
- 1989-09-29 AU AU42385/89A patent/AU4238589A/en not_active Abandoned
-
1992
- 1992-12-07 AU AU29926/92A patent/AU2992692A/en not_active Abandoned
-
1995
- 1995-07-17 AU AU25046/95A patent/AU2504695A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
AU4238589A (en) | 1990-04-05 |
EP0361481B1 (de) | 1995-04-05 |
CA1311861C (en) | 1992-12-22 |
AU2992692A (en) | 1993-02-04 |
AU2504695A (en) | 1995-09-14 |
EP0361481A2 (de) | 1990-04-04 |
DE68922054T2 (de) | 1995-08-03 |
EP0361481A3 (en) | 1990-11-14 |
US4965225A (en) | 1990-10-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |