DE69407354T2 - Vielfachhalbleiterlaser mit reduzierten Nebensprechkomponenten und Herstellungsverfahren - Google Patents

Vielfachhalbleiterlaser mit reduzierten Nebensprechkomponenten und Herstellungsverfahren

Info

Publication number
DE69407354T2
DE69407354T2 DE69407354T DE69407354T DE69407354T2 DE 69407354 T2 DE69407354 T2 DE 69407354T2 DE 69407354 T DE69407354 T DE 69407354T DE 69407354 T DE69407354 T DE 69407354T DE 69407354 T2 DE69407354 T2 DE 69407354T2
Authority
DE
Germany
Prior art keywords
manufacturing processes
semiconductor lasers
multiple semiconductor
crosstalk components
reduced crosstalk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69407354T
Other languages
English (en)
Other versions
DE69407354D1 (de
Inventor
Adriaan Valster
Der Poel Carolus Johannes Van
Jeroen Jan Lambertus Horikx
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69407354D1 publication Critical patent/DE69407354D1/de
Publication of DE69407354T2 publication Critical patent/DE69407354T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
DE69407354T 1993-07-12 1994-07-06 Vielfachhalbleiterlaser mit reduzierten Nebensprechkomponenten und Herstellungsverfahren Expired - Fee Related DE69407354T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BE9300717A BE1007282A3 (nl) 1993-07-12 1993-07-12 Opto-electronische halfgeleiderinrichting met een array van halfgeleiderdiodelasers en werkwijze ter vervaardiging daarvan.

Publications (2)

Publication Number Publication Date
DE69407354D1 DE69407354D1 (de) 1998-01-29
DE69407354T2 true DE69407354T2 (de) 1998-06-04

Family

ID=3887174

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69407354T Expired - Fee Related DE69407354T2 (de) 1993-07-12 1994-07-06 Vielfachhalbleiterlaser mit reduzierten Nebensprechkomponenten und Herstellungsverfahren

Country Status (6)

Country Link
US (1) US5805630A (de)
EP (1) EP0634823B1 (de)
JP (1) JPH0758418A (de)
KR (1) KR960016031A (de)
BE (1) BE1007282A3 (de)
DE (1) DE69407354T2 (de)

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US5568501A (en) * 1993-11-01 1996-10-22 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and method for producing the same
US5765073A (en) * 1995-04-10 1998-06-09 Old Dominion University Field controlled plasma discharge printing device
GB2310755A (en) * 1996-02-28 1997-09-03 Sharp Kk A method of etching a semiconductor structure
US6058124A (en) * 1997-11-25 2000-05-02 Xerox Corporation Monolithic independently addressable Red/IR side by side laser
JPH11202275A (ja) * 1998-01-07 1999-07-30 Oki Electric Ind Co Ltd リッジ導波路型半導体光機能素子およびその製造方法
JP4462657B2 (ja) * 1998-06-04 2010-05-12 ソニー株式会社 半導体発光素子およびその製造方法
JP3862894B2 (ja) * 1999-08-18 2006-12-27 株式会社東芝 半導体レーザ装置
US6618418B2 (en) 2001-11-15 2003-09-09 Xerox Corporation Dual III-V nitride laser structure with reduced thermal cross-talk
JP3736462B2 (ja) * 2002-01-17 2006-01-18 ソニー株式会社 半導体レーザ装置
US7215691B2 (en) * 2002-09-19 2007-05-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
JP4359035B2 (ja) * 2002-11-21 2009-11-04 富士通株式会社 光中継器
JP2006005167A (ja) * 2004-06-17 2006-01-05 Sumitomo Electric Ind Ltd 半導体光素子
TWI364118B (en) * 2007-06-29 2012-05-11 Huga Optotech Inc Semiconductor structure combination for epitaxy of semiconductor optoelectronic device and manufactur thereof
DE102008006988A1 (de) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
RU2480967C2 (ru) * 2008-02-27 2013-04-27 Конинклейке Филипс Электроникс Н.В. Скрытые органические оптоэлектронные устройства со светорассеивающим слоем
US20100303109A1 (en) * 2009-05-26 2010-12-02 Venkata Adiseshaiah Bhagavatula Proximity Coupled Athermal Optical Package Comprising Laser Source And Compound Facet Wavelength Conversion Device
US8102887B2 (en) * 2009-05-26 2012-01-24 Corning Incorporated Edge bonded optical packages
DE102009054564A1 (de) * 2009-12-11 2011-06-16 Osram Opto Semiconductors Gmbh Laserdiodenanordnung und Verfahren zum Herstellen einer Laserdiodenanordnung
US8111452B2 (en) * 2010-02-22 2012-02-07 Corning Incorporated Wavelength conversion device with microlens and optical package incorporating the same
EP3051638A1 (de) * 2015-01-27 2016-08-03 Huawei Technologies Co., Ltd. Abstimmbarer Laser und Verfahren zur Abstimmung eines Lasers
KR102265698B1 (ko) * 2019-12-06 2021-06-16 주식회사 인터엑스 프레스 성형정보를 이용한 품질 데이터 분석 및 레시피 최적화 기법

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Publication number Priority date Publication date Assignee Title
JPS57190384A (en) * 1981-05-20 1982-11-22 Toshiba Corp Wavelength sweeping laser
JPS60236274A (ja) * 1984-05-10 1985-11-25 Sharp Corp 半導体レ−ザ素子
JPS60242686A (ja) * 1984-05-17 1985-12-02 Nec Corp 半導体レ−ザアレイ
JPS61168985A (ja) * 1985-01-22 1986-07-30 Nec Corp 半導体レ−ザ素子
JPS6242592A (ja) * 1985-08-20 1987-02-24 Matsushita Electric Ind Co Ltd 半導体レ−ザアレイ装置およびその製造方法
JPH084176B2 (ja) * 1987-03-18 1996-01-17 松下電器産業株式会社 半導体レ−ザ装置の製造方法
JPS6453488A (en) * 1987-08-24 1989-03-01 Mitsubishi Electric Corp Manufacture of light emitting semiconductor device
JPH01243490A (ja) * 1988-03-25 1989-09-28 Hitachi Ltd 半導体結晶の製造方法及び２ビームアレイ半導体レーザ装置
JPH01260878A (ja) * 1988-04-12 1989-10-18 Mitsubishi Electric Corp 多点発光型半導体レーザ
JPH01273378A (ja) * 1988-04-26 1989-11-01 Sharp Corp 半導体レーザ装置
JPH0828551B2 (ja) * 1988-05-07 1996-03-21 三菱電機株式会社 アレイレーザ
JPH02122584A (ja) * 1988-10-31 1990-05-10 Nec Corp 半導体レーザアレイ及び光ディスク装置
US5033053A (en) * 1989-03-30 1991-07-16 Canon Kabushiki Kaisha Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same
JP2545994B2 (ja) * 1989-08-31 1996-10-23 日本電気株式会社 半導体光装置

Also Published As

Publication number Publication date
US5805630A (en) 1998-09-08
KR960016031A (ko) 1996-05-22
JPH0758418A (ja) 1995-03-03
EP0634823A1 (de) 1995-01-18
EP0634823B1 (de) 1997-12-17
DE69407354D1 (de) 1998-01-29
BE1007282A3 (nl) 1995-05-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: UNIPHASE OPTO HOLDINGS INC., SAN JOSE, CALIF., US

8328 Change in the person/name/address of the agent

Free format text: E. TERGAU UND KOLLEGEN, 90482 NUERNBERG

8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US

8339 Ceased/non-payment of the annual fee