DE69401112T2 - Herstellungsverfahren fuer ein verbessertes tantalpulver und daraus hergestellte elektrode mit hoher kapazitaet und geringem leckstrom - Google Patents

Herstellungsverfahren fuer ein verbessertes tantalpulver und daraus hergestellte elektrode mit hoher kapazitaet und geringem leckstrom

Info

Publication number
DE69401112T2
DE69401112T2 DE69401112T DE69401112T DE69401112T2 DE 69401112 T2 DE69401112 T2 DE 69401112T2 DE 69401112 T DE69401112 T DE 69401112T DE 69401112 T DE69401112 T DE 69401112T DE 69401112 T2 DE69401112 T2 DE 69401112T2
Authority
DE
Germany
Prior art keywords
manufacturing
leakage current
high capacity
electrode made
low leakage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69401112T
Other languages
English (en)
Other versions
DE69401112D1 (de
Inventor
Hongju Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Corp
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of DE69401112D1 publication Critical patent/DE69401112D1/de
Application granted granted Critical
Publication of DE69401112T2 publication Critical patent/DE69401112T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE69401112T 1993-04-26 1994-04-15 Herstellungsverfahren fuer ein verbessertes tantalpulver und daraus hergestellte elektrode mit hoher kapazitaet und geringem leckstrom Expired - Lifetime DE69401112T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/052,876 US5448447A (en) 1993-04-26 1993-04-26 Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom
PCT/US1994/004207 WO1994025971A1 (en) 1993-04-26 1994-04-15 A process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom

Publications (2)

Publication Number Publication Date
DE69401112D1 DE69401112D1 (de) 1997-01-23
DE69401112T2 true DE69401112T2 (de) 1997-04-03

Family

ID=21980485

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69401112T Expired - Lifetime DE69401112T2 (de) 1993-04-26 1994-04-15 Herstellungsverfahren fuer ein verbessertes tantalpulver und daraus hergestellte elektrode mit hoher kapazitaet und geringem leckstrom

Country Status (15)

Country Link
US (1) US5448447A (de)
EP (1) EP0647349B1 (de)
JP (1) JP3174341B2 (de)
KR (1) KR100293304B1 (de)
CN (2) CN1143333C (de)
AT (1) ATE146299T1 (de)
AU (1) AU6706194A (de)
CZ (2) CZ293364B6 (de)
DE (1) DE69401112T2 (de)
HK (1) HK59697A (de)
RU (1) RU2154871C2 (de)
SG (1) SG52629A1 (de)
TW (1) TW439076B (de)
UA (1) UA41325C2 (de)
WO (1) WO1994025971A1 (de)

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US20030061907A1 (en) * 1994-08-01 2003-04-03 Kroftt-Brakston International, Inc. Gel of elemental material or alloy and liquid metal and salt
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US6165623A (en) 1996-11-07 2000-12-26 Cabot Corporation Niobium powders and niobium electrolytic capacitors
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AU6495398A (en) 1997-02-19 1998-09-09 H.C. Starck Gmbh & Co. Kg Tantalum powder, method for producing same powder and sintered anodes obtained from it
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US6051044A (en) 1998-05-04 2000-04-18 Cabot Corporation Nitrided niobium powders and niobium electrolytic capacitors
AU757790B2 (en) * 1998-05-06 2003-03-06 H.C. Starck Tantalum and Niobium GmbH Metal powders produced by the reduction of the oxides with gaseous magnesium
JP3196832B2 (ja) 1998-05-15 2001-08-06 日本電気株式会社 固体電解コンデンサ及びその製造方法
US6576038B1 (en) * 1998-05-22 2003-06-10 Cabot Corporation Method to agglomerate metal particles and metal particles having improved properties
DE69938056T2 (de) 1998-08-05 2009-01-15 Showa Denko K.K. Niob-sinter für kondensator und verfahren zu seiner herstellung
US6462934B2 (en) 1998-09-16 2002-10-08 Cabot Corporation Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides
US6416730B1 (en) 1998-09-16 2002-07-09 Cabot Corporation Methods to partially reduce a niobium metal oxide oxygen reduced niobium oxides
US6322912B1 (en) 1998-09-16 2001-11-27 Cabot Corporation Electrolytic capacitor anode of valve metal oxide
US6391275B1 (en) 1998-09-16 2002-05-21 Cabot Corporation Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides
ATE343844T1 (de) 1998-12-15 2006-11-15 Showa Denko Kk Niobkondensator und verfahren zu dessen herstellung
US6515846B1 (en) * 1999-02-08 2003-02-04 H.C. Starck, Inc. Capacitor substrates made of refractory metal nitrides
TW460883B (en) * 1999-02-16 2001-10-21 Showa Denko Kk Niobium powder, niobium sintered body, capacitor comprised of the sintered body, and method for manufacturing the capacitor
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RU2243856C2 (ru) 1999-03-19 2005-01-10 Кабот Корпорейшн Получение порошков ниобия и других металлов размалыванием
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US6375704B1 (en) * 1999-05-12 2002-04-23 Cabot Corporation High capacitance niobium powders and electrolytic capacitor anodes
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US6960237B2 (en) 1999-07-15 2005-11-01 Showa Denko Kabushiki Kaisha Niobium powder, sintered body thereof and capacitor using the same
US6660057B1 (en) 1999-10-01 2003-12-09 Showa Denko K.K. Powder composition for capacitor, sintered body using the composition and capacitor using the sintered body
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US6423110B1 (en) 1999-12-08 2002-07-23 Showa Denko K.K. Powder composition for capacitor and sintered body using the composition, and capacitor using the sintered body
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JP4261105B2 (ja) * 2000-03-01 2009-04-30 キャボット コーポレイション 窒化バルブ金属およびその製造方法
US6576099B2 (en) 2000-03-23 2003-06-10 Cabot Corporation Oxygen reduced niobium oxides
US6540810B2 (en) 2000-04-21 2003-04-01 Showa Denko Kabushiki Kaisha Niobium powder for capacitor, sintered body using the powder and capacitor using the same
ATE388779T1 (de) * 2000-04-24 2008-03-15 Showa Denko Kk Niobpulver, dessen sintermasse und kondensator
DE10030387A1 (de) * 2000-06-21 2002-01-03 Starck H C Gmbh Co Kg Kondensatorpulver
US6652619B2 (en) * 2000-08-10 2003-11-25 Showa Denko K.K. Niobium powder, sintered body thereof, and capacitor using the same
EP1324359B2 (de) † 2000-08-10 2017-10-04 Showa Denko K.K. Niobpuder, sinter davon und kondensator damit
JP2002093666A (ja) * 2000-09-20 2002-03-29 Showa Denko Kk ニオブ粉、それを用いた焼結体及びそれを用いたコンデンサ
US6554884B1 (en) * 2000-10-24 2003-04-29 H.C. Starck, Inc. Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates
JP2004513514A (ja) 2000-11-06 2004-04-30 キャボット　コーポレイション 酸素を低減した改質バルブ金属酸化物
US6755884B2 (en) * 2000-11-30 2004-06-29 Showa Denko K.K. Niobium powder for capacitor, sintered body thereof and capacitor using the sintered body
US6447570B1 (en) * 2000-11-30 2002-09-10 Vishay Sprague, Inc. Sintered Tantalum and Niobium capacitor pellets doped with Nitrogen, and method of making the same
KR100812689B1 (ko) * 2000-12-01 2008-03-13 쇼와 덴코 가부시키가이샤 커패시터용 니오브 분말, 그 소결체 및 소결체를 이용한커패시터
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JP4187953B2 (ja) 2001-08-15 2008-11-26 キャボットスーパーメタル株式会社 窒素含有金属粉末の製造方法
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CN101579743B (zh) * 2003-06-10 2014-11-26 卡伯特公司 钽粉及其制造方法
ATE554490T1 (de) * 2003-11-10 2012-05-15 Showa Denko Kk Niobpulver für einen kondensator, niob- gesinterter körper und kondensator
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JP6761899B2 (ja) 2016-09-01 2020-09-30 コンポジット マテリアルズ テクノロジー インコーポレイテッドＣｏｍｐｏｓｉｔｅ Ｍａｔｅｒｉａｌｓ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． ＬＩＢ陰極のためのバルブ金属基板上のナノスケール／ナノ構造のＳｉの被覆
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Also Published As

Publication number Publication date
JPH07508618A (ja) 1995-09-21
DE69401112D1 (de) 1997-01-23
WO1994025971A1 (en) 1994-11-10
HK59697A (en) 1997-05-16
ATE146299T1 (de) 1996-12-15
JP3174341B2 (ja) 2001-06-11
KR100293304B1 (ko) 2001-10-24
UA41325C2 (uk) 2001-09-17
US5448447A (en) 1995-09-05
SG52629A1 (en) 1998-09-28
CN1046878C (zh) 1999-12-01
CN1143333C (zh) 2004-03-24
TW439076B (en) 2001-06-07
RU94046324A (ru) 1996-10-27
AU6706194A (en) 1994-11-21
CZ293364B6 (cs) 2004-04-14
EP0647349A1 (de) 1995-04-12
CZ315994A3 (en) 1995-12-13
CN1236177A (zh) 1999-11-24
CN1108036A (zh) 1995-09-06
EP0647349B1 (de) 1996-12-11
CZ292006B6 (cs) 2003-07-16
RU2154871C2 (ru) 2000-08-20

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