DE69516556T2 - Verfahren zum Nitrieren von Tantalpulver - Google Patents

Verfahren zum Nitrieren von Tantalpulver

Info

Publication number
DE69516556T2
DE69516556T2 DE69516556T DE69516556T DE69516556T2 DE 69516556 T2 DE69516556 T2 DE 69516556T2 DE 69516556 T DE69516556 T DE 69516556T DE 69516556 T DE69516556 T DE 69516556T DE 69516556 T2 DE69516556 T2 DE 69516556T2
Authority
DE
Germany
Prior art keywords
tantalum powder
nitriding tantalum
nitriding
powder
tantalum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69516556T
Other languages
English (en)
Other versions
DE69516556D1 (de
Inventor
Terrance B Tripp
Dr Wolf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Materion Newton Inc
Original Assignee
HC Starck Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HC Starck Inc filed Critical HC Starck Inc
Publication of DE69516556D1 publication Critical patent/DE69516556D1/de
Application granted granted Critical
Publication of DE69516556T2 publication Critical patent/DE69516556T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/14—Treatment of metallic powder
    • B22F1/145—Chemical treatment, e.g. passivation or decarburisation
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0068—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/24—Nitriding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/80—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Powder Metallurgy (AREA)
  • Battery Electrode And Active Subsutance (AREA)
DE69516556T 1994-01-26 1995-01-13 Verfahren zum Nitrieren von Tantalpulver Expired - Lifetime DE69516556T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18759894A 1994-01-26 1994-01-26

Publications (2)

Publication Number Publication Date
DE69516556D1 DE69516556D1 (de) 2000-06-08
DE69516556T2 true DE69516556T2 (de) 2000-09-07

Family

ID=22689640

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69516556T Expired - Lifetime DE69516556T2 (de) 1994-01-26 1995-01-13 Verfahren zum Nitrieren von Tantalpulver

Country Status (3)

Country Link
EP (1) EP0665302B1 (de)
JP (1) JP3726256B2 (de)
DE (1) DE69516556T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10195244B4 (de) * 2000-11-30 2006-09-21 Vishay Sprague, Inc. Mit Stickstoff dotierte, gesinterte Tantal- und Niob-Kondensatorpellets und Verfahren zur Herstellung derselben

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ300529B6 (cs) 1997-02-19 2009-06-10 H.C. Starck Gmbh Práškový tantal, zpusob jeho výroby a z nej vyrobené anody a kondezátory
EP1137021B1 (de) * 1998-08-05 2008-01-23 Showa Denko Kabushiki Kaisha Niob-sinter für kondensator und verfahren zu seiner herstellung
US6515846B1 (en) * 1999-02-08 2003-02-04 H.C. Starck, Inc. Capacitor substrates made of refractory metal nitrides
JP4049964B2 (ja) * 2000-02-08 2008-02-20 キャボットスーパーメタル株式会社 窒素含有金属粉末およびその製造方法ならびにそれを用いた多孔質焼結体および固体電解コンデンサー
US6432161B1 (en) 2000-02-08 2002-08-13 Cabot Supermetals K.K. Nitrogen-containing metal powder, production process thereof, and porous sintered body and solid electrolytic capacitor using the metal powder
IL151549A0 (en) 2000-03-01 2003-04-10 Cabot Corp Nitrided valve metals and processes for making the same
BR0110333A (pt) * 2000-04-24 2003-01-07 Showa Denko Kk Pó de nióbio, corpo sinterizado do mesmo e capacitor
JP2002030301A (ja) * 2000-07-12 2002-01-31 Showa Kyabotto Super Metal Kk 窒素含有金属粉末およびその製造方法ならびにそれを用いた多孔質焼結体および固体電解コンデンサ
US6554884B1 (en) * 2000-10-24 2003-04-29 H.C. Starck, Inc. Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates
JP4187953B2 (ja) 2001-08-15 2008-11-26 キャボットスーパーメタル株式会社 窒素含有金属粉末の製造方法
US7067197B2 (en) 2003-01-07 2006-06-27 Cabot Corporation Powder metallurgy sputtering targets and methods of producing same
WO2006062234A1 (ja) * 2004-12-10 2006-06-15 Cabot Supermetals K.K. 金属粉末および多孔質焼結体の製造方法、金属粉末、およびコンデンサ
JP5105879B2 (ja) * 2004-12-10 2012-12-26 キャボットスーパーメタル株式会社 金属粉末および多孔質焼結体の製造方法
CN100528418C (zh) * 2008-01-11 2009-08-19 宁夏东方钽业股份有限公司 含氮均匀的阀金属粉末及其制造方法,阀金属坯块和阀金属烧结体以及电解电容器的阳极
GB0902486D0 (en) 2009-02-13 2009-04-01 Metalysis Ltd A method for producing metal powders
WO2015100519A1 (zh) * 2013-12-30 2015-07-09 宁夏东方钽业股份有限公司 一种高氮含量电容器级钽粉的制备方法及由其制得的钽粉及钽电容器
EP3486338B1 (de) * 2016-07-13 2023-06-21 Ningxia Orient Tantalum Industry Co., Ltd. Plättchenförmiges tantalpulver und verfahren zu dessen herstelleung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE884680A (nl) * 1979-05-29 1981-02-09 Int Standard Electric Corp Werkwijze voor het bekleden van poedervormig materiaal
DE3130392C2 (de) * 1981-07-31 1985-10-17 Hermann C. Starck Berlin, 1000 Berlin Verfahren zur Herstellung reiner agglomerierter Ventilmetallpulver für Elektrolytkondensatoren, deren Verwendung und Verfahren zur Herstellung von Sinteranoden
US4508563A (en) * 1984-03-19 1985-04-02 Sprague Electric Company Reducing the oxygen content of tantalum
US4544403A (en) * 1984-11-30 1985-10-01 Fansteel Inc. High charge, low leakage tantalum powders
US4722756A (en) * 1987-02-27 1988-02-02 Cabot Corp Method for deoxidizing tantalum material
JPH0469914A (ja) * 1990-07-10 1992-03-05 Towa Electron Kk 窒化タンタル固体電解コンデンサの陽極体の製造方法
US5448447A (en) * 1993-04-26 1995-09-05 Cabot Corporation Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10195244B4 (de) * 2000-11-30 2006-09-21 Vishay Sprague, Inc. Mit Stickstoff dotierte, gesinterte Tantal- und Niob-Kondensatorpellets und Verfahren zur Herstellung derselben

Also Published As

Publication number Publication date
JPH08239207A (ja) 1996-09-17
EP0665302A2 (de) 1995-08-02
DE69516556D1 (de) 2000-06-08
EP0665302A3 (de) 1995-10-25
JP3726256B2 (ja) 2005-12-14
EP0665302B1 (de) 2000-05-03

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