DE69329220D1 - Zeilenredundanzschaltung eines Halbleiterspeichersgeräts - Google Patents

Zeilenredundanzschaltung eines Halbleiterspeichersgeräts

Info

Publication number
DE69329220D1
DE69329220D1 DE69329220T DE69329220T DE69329220D1 DE 69329220 D1 DE69329220 D1 DE 69329220D1 DE 69329220 T DE69329220 T DE 69329220T DE 69329220 T DE69329220 T DE 69329220T DE 69329220 D1 DE69329220 D1 DE 69329220D1
Authority
DE
Germany
Prior art keywords
spare
array
submemory
word lines
submemory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69329220T
Other languages
English (en)
Other versions
DE69329220T2 (de
Inventor
Seung-Cheol Oh
Moon-Gone Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE69329220D1 publication Critical patent/DE69329220D1/de
Application granted granted Critical
Publication of DE69329220T2 publication Critical patent/DE69329220T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
DE69329220T 1992-07-13 1993-04-27 Zeilenredundanzschaltung eines Halbleiterspeichersgeräts Expired - Lifetime DE69329220T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920012437A KR960002777B1 (ko) 1992-07-13 1992-07-13 반도체 메모리 장치의 로우 리던던시 장치

Publications (2)

Publication Number Publication Date
DE69329220D1 true DE69329220D1 (de) 2000-09-21
DE69329220T2 DE69329220T2 (de) 2000-12-28

Family

ID=19336231

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69329220T Expired - Lifetime DE69329220T2 (de) 1992-07-13 1993-04-27 Zeilenredundanzschaltung eines Halbleiterspeichersgeräts

Country Status (6)

Country Link
US (1) US5355339A (de)
EP (1) EP0578935B1 (de)
JP (1) JPH07272496A (de)
KR (1) KR960002777B1 (de)
DE (1) DE69329220T2 (de)
TW (1) TW225618B (de)

Families Citing this family (36)

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FR2695493B1 (fr) * 1992-09-08 1994-10-07 Thomson Composants Militaires Circuit de mémoire avec redondance.
EP0686979B1 (de) * 1994-06-10 2001-03-07 STMicroelectronics S.r.l. Fehlertolerantes Speichergerät, insbesondere des Typs "flash EEPROM"
US5528539A (en) * 1994-09-29 1996-06-18 Micron Semiconductor, Inc. High speed global row redundancy system
US5544113A (en) * 1994-11-30 1996-08-06 International Business Machines Corporation Random access memory having a flexible array redundancy scheme
KR0174338B1 (ko) * 1994-11-30 1999-04-01 윌리엄 티. 엘리스 간단하게 테스트할 수 있는 구성을 갖는 랜덤 액세스 메모리
US5546349A (en) * 1995-03-13 1996-08-13 Kabushiki Kaisha Toshiba Exchangeable hierarchical data line structure
JP3964491B2 (ja) * 1997-03-25 2007-08-22 株式会社ルネサステクノロジ 半導体記憶装置及び半導体記憶装置の欠陥救済方法
JPH10275493A (ja) * 1997-03-31 1998-10-13 Nec Corp 半導体記憶装置
JP4804503B2 (ja) * 1998-06-09 2011-11-02 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR100333720B1 (ko) * 1998-06-30 2002-06-20 박종섭 강유전체메모리소자의리던던시회로
JP4260247B2 (ja) * 1998-09-02 2009-04-30 富士通マイクロエレクトロニクス株式会社 半導体記憶装置
US6018483A (en) * 1998-12-10 2000-01-25 Siemens Aktiengesellschaft Distributed block redundancy for memory devices
US6208569B1 (en) * 1999-04-06 2001-03-27 Genesis Semiconductor, Inc. Method of and apparatus for sharing redundancy circuits between memory arrays within a semiconductor memory device
JP2000293998A (ja) 1999-04-07 2000-10-20 Nec Corp 半導体記憶装置
KR100322538B1 (ko) * 1999-07-05 2002-03-18 윤종용 래치 셀을 채용하는 리던던시 회로
JP2001243790A (ja) * 2000-03-01 2001-09-07 Mitsubishi Electric Corp 半導体記憶装置
JP4141656B2 (ja) * 2000-06-07 2008-08-27 株式会社東芝 半導体メモリ集積回路および半導体メモリ装置をテストする方法
US6314030B1 (en) 2000-06-14 2001-11-06 Micron Technology, Inc. Semiconductor memory having segmented row repair
KR100390146B1 (ko) * 2001-01-31 2003-07-04 삼성전자주식회사 번-인 테스트 기능을 구비한 반도체 메모리 장치
KR100400307B1 (ko) 2001-05-09 2003-10-01 주식회사 하이닉스반도체 로오 리페어회로를 가진 반도체 메모리 장치
US7159141B2 (en) * 2002-07-01 2007-01-02 Micron Technology, Inc. Repairable block redundancy scheme
JP3862220B2 (ja) * 2002-07-29 2006-12-27 松下電器産業株式会社 半導体記憶装置
US8281142B2 (en) 2005-01-20 2012-10-02 The Invention Science Fund I, Llc Notarizable electronic paper
US7669245B2 (en) 2005-06-08 2010-02-23 Searete, Llc User accessibility to electronic paper
US7856555B2 (en) 2005-01-20 2010-12-21 The Invention Science Fund I, Llc Write accessibility for electronic paper
US7774606B2 (en) 2005-01-20 2010-08-10 The Invention Science Fund I, Inc Write accessibility for electronic paper
US8640259B2 (en) 2005-01-20 2014-01-28 The Invention Science Fund I, Llc Notarizable electronic paper
US7739510B2 (en) 2005-05-12 2010-06-15 The Invention Science Fund I, Inc Alert options for electronic-paper verification
US8063878B2 (en) 2005-01-20 2011-11-22 The Invention Science Fund I, Llc Permanent electronic paper
US7865734B2 (en) 2005-05-12 2011-01-04 The Invention Science Fund I, Llc Write accessibility for electronic paper
JP4516852B2 (ja) 2005-02-04 2010-08-04 Ｎｅｃインフロンティア株式会社 電子機器
JP4524636B2 (ja) * 2005-03-24 2010-08-18 エルピーダメモリ株式会社 半導体記憶装置
KR100809683B1 (ko) * 2005-07-14 2008-03-07 삼성전자주식회사 멀티 로우 어드레스 테스트 시간을 감소시킬 수 있는반도체 메모리 장치 및 멀티 로우 어드레스 테스트 방법.
KR101282967B1 (ko) * 2007-09-21 2013-07-08 삼성전자주식회사 리던던시 메모리 블록을 가지는 반도체 메모리 장치 및그의 셀 어레이 구조
JP5378574B1 (ja) * 2012-06-13 2013-12-25 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
CN113918481A (zh) * 2017-07-30 2022-01-11 纽罗布拉德有限公司 一种存储器芯片

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471472A (en) * 1982-02-05 1984-09-11 Advanced Micro Devices, Inc. Semiconductor memory utilizing an improved redundant circuitry configuration
JPS63124299A (ja) * 1986-11-14 1988-05-27 Hitachi Ltd 半導体記憶装置
DE68928112T2 (de) * 1988-03-18 1997-11-20 Toshiba Kawasaki Kk Masken-rom mit Ersatzspeicherzellen
US4885720A (en) * 1988-04-01 1989-12-05 International Business Machines Corporation Memory device and method implementing wordline redundancy without an access time penalty
JPH0748314B2 (ja) * 1989-02-02 1995-05-24 株式会社東芝 半導体記憶装置
JPH02208897A (ja) * 1989-02-08 1990-08-20 Seiko Epson Corp 半導体記憶装置
KR910005601B1 (ko) * 1989-05-24 1991-07-31 삼성전자주식회사 리던던트 블럭을 가지는 반도체 메모리장치
KR920010347B1 (ko) * 1989-12-30 1992-11-27 삼성전자주식회사 분할된 워드라인을 가지는 메모리장치의 리던던시 구조
EP0465808B1 (de) * 1990-06-19 1998-07-29 Texas Instruments Incorporated Assoziatives DRAM-Redundanzschema mit variabler Satzgrösse

Also Published As

Publication number Publication date
EP0578935A3 (en) 1996-10-16
KR960002777B1 (ko) 1996-02-26
EP0578935B1 (de) 2000-08-16
JPH07272496A (ja) 1995-10-20
DE69329220T2 (de) 2000-12-28
US5355339A (en) 1994-10-11
TW225618B (de) 1994-06-21
EP0578935A2 (de) 1994-01-19

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