DE69219073D1 - Dünnfilm-Transistor mit einer Schutzschicht und Verfahren zur Herstellung - Google Patents

Dünnfilm-Transistor mit einer Schutzschicht und Verfahren zur Herstellung

Info

Publication number
DE69219073D1
DE69219073D1 DE69219073T DE69219073T DE69219073D1 DE 69219073 D1 DE69219073 D1 DE 69219073D1 DE 69219073 T DE69219073 T DE 69219073T DE 69219073 T DE69219073 T DE 69219073T DE 69219073 D1 DE69219073 D1 DE 69219073D1
Authority
DE
Germany
Prior art keywords
manufacture
thin film
protective layer
film transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69219073T
Other languages
English (en)
Other versions
DE69219073T2 (de
Inventor
Makoto Sasaki
Hiromitsu Ishii
Kazuhiro Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP32677691A external-priority patent/JPH05136166A/ja
Priority claimed from JP18280692A external-priority patent/JP3131853B2/ja
Priority claimed from JP18280892A external-priority patent/JPH065625A/ja
Priority claimed from JP18280792A external-priority patent/JPH065624A/ja
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Publication of DE69219073D1 publication Critical patent/DE69219073D1/de
Application granted granted Critical
Publication of DE69219073T2 publication Critical patent/DE69219073T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/911—Differential oxidation and etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
DE69219073T 1991-11-15 1992-11-12 Dünnfilm-Transistor mit einer Schutzschicht und Verfahren zur Herstellung Expired - Fee Related DE69219073T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP32677691A JPH05136166A (ja) 1991-11-15 1991-11-15 薄膜トランジスタの製造方法
JP18280692A JP3131853B2 (ja) 1992-06-18 1992-06-18 薄膜トランジスタの製造方法
JP18280892A JPH065625A (ja) 1992-06-18 1992-06-18 薄膜トランジスタの製造方法
JP18280792A JPH065624A (ja) 1992-06-18 1992-06-18 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
DE69219073D1 true DE69219073D1 (de) 1997-05-22
DE69219073T2 DE69219073T2 (de) 1997-07-24

Family

ID=27475074

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69219073T Expired - Fee Related DE69219073T2 (de) 1991-11-15 1992-11-12 Dünnfilm-Transistor mit einer Schutzschicht und Verfahren zur Herstellung

Country Status (3)

Country Link
US (1) US5427962A (de)
EP (1) EP0542279B1 (de)
DE (1) DE69219073T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08172202A (ja) * 1994-12-20 1996-07-02 Sharp Corp 薄膜トランジスタおよびその製造方法
KR0145900B1 (ko) * 1995-02-11 1998-09-15 김광호 박막 트랜지스터 액정디스플레이 소자 및 그 제조방법
JP3444053B2 (ja) * 1995-10-13 2003-09-08 ソニー株式会社 薄膜半導体装置
US5612235A (en) * 1995-11-01 1997-03-18 Industrial Technology Research Institute Method of making thin film transistor with light-absorbing layer
KR100232677B1 (ko) * 1996-04-09 1999-12-01 구본준 박막 트랜지스터의 제조방법 및 그 방법에 의해 제조되는 박막 트랜지스터의 구조
JP3082671B2 (ja) 1996-06-26 2000-08-28 日本電気株式会社 トランジスタ素子及びその製造方法
KR100196336B1 (en) * 1996-07-27 1999-06-15 Lg Electronics Inc Method of manufacturing thin film transistor
JP3883641B2 (ja) * 1997-03-27 2007-02-21 株式会社半導体エネルギー研究所 コンタクト構造およびアクティブマトリクス型表示装置
JP4663038B2 (ja) * 1997-05-28 2011-03-30 三菱電機株式会社 コンタクトホールの形成方法
US5943559A (en) * 1997-06-23 1999-08-24 Nec Corporation Method for manufacturing liquid crystal display apparatus with drain/source silicide electrodes made by sputtering process
JP4363684B2 (ja) * 1998-09-02 2009-11-11 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ基板およびこれを用いた液晶表示装置
US6355580B1 (en) 1998-09-03 2002-03-12 Micron Technology, Inc. Ion-assisted oxidation methods and the resulting structures
KR100333274B1 (ko) * 1998-11-24 2002-04-24 구본준, 론 위라하디락사 액정표시장치 및 그 제조방법
KR100413668B1 (ko) * 2001-03-29 2003-12-31 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판 제조방법
US20060003485A1 (en) * 2004-06-30 2006-01-05 Hoffman Randy L Devices and methods of making the same
US7390754B2 (en) * 2006-07-20 2008-06-24 United Microelectronics Corp. Method of forming a silicide
JP5245287B2 (ja) * 2007-05-18 2013-07-24 ソニー株式会社 半導体装置の製造方法、薄膜トランジスタ基板の製造方法および表示装置の製造方法
SG165252A1 (en) * 2009-03-25 2010-10-28 Unisantis Electronics Jp Ltd Semiconductor device and production method therefor
JP5032532B2 (ja) * 2009-06-05 2012-09-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006378B2 (ja) * 2009-08-11 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006379B2 (ja) * 2009-09-16 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
TWI562384B (en) * 2015-05-25 2016-12-11 Hon Hai Prec Ind Co Ltd Thin film transistor and method of manufacturing the same
KR102660292B1 (ko) 2016-06-23 2024-04-24 삼성디스플레이 주식회사 박막 트랜지스터 패널 및 그 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4459739A (en) * 1981-05-26 1984-07-17 Northern Telecom Limited Thin film transistors
JPS62213278A (ja) * 1986-03-14 1987-09-19 Oki Electric Ind Co Ltd 薄膜トランジスタの製造方法
JPH07105502B2 (ja) * 1987-07-21 1995-11-13 松下電器産業株式会社 薄膜トランジスタ−の製造方法
JPH01173650A (ja) * 1987-12-26 1989-07-10 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタの製造方法
US5053354A (en) * 1988-05-30 1991-10-01 Seikosha Co., Ltd. Method of fabricating a reverse staggered type silicon thin film transistor
JPH01302865A (ja) * 1988-05-31 1989-12-06 Matsushita Electric Ind Co Ltd 薄膜トランジスターおよびその製造方法
JPH02199842A (ja) * 1989-01-27 1990-08-08 Nec Corp 薄膜電界効果型トランジスタ素子の製造方法
JPH02297969A (ja) * 1989-05-11 1990-12-10 Fujitsu Ltd 薄膜トランジスタとその製造方法

Also Published As

Publication number Publication date
EP0542279A1 (de) 1993-05-19
EP0542279B1 (de) 1997-04-16
US5427962A (en) 1995-06-27
DE69219073T2 (de) 1997-07-24

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee