DE69218155D1 - Hochspannung-Dünnfilmtransistor mit einer Drift-Zone mit einem linearen Dopierungsprofil und mit einer Feldplatte - Google Patents
Hochspannung-Dünnfilmtransistor mit einer Drift-Zone mit einem linearen Dopierungsprofil und mit einer FeldplatteInfo
- Publication number
- DE69218155D1 DE69218155D1 DE69218155T DE69218155T DE69218155D1 DE 69218155 D1 DE69218155 D1 DE 69218155D1 DE 69218155 T DE69218155 T DE 69218155T DE 69218155 T DE69218155 T DE 69218155T DE 69218155 D1 DE69218155 D1 DE 69218155D1
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- high voltage
- film transistor
- field plate
- doping profile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/811,554 US5246870A (en) | 1991-02-01 | 1991-12-20 | Method for making an improved high voltage thin film transistor having a linear doping profile |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69218155D1 true DE69218155D1 (de) | 1997-04-17 |
DE69218155T2 DE69218155T2 (de) | 1997-08-21 |
Family
ID=25206872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69218155T Expired - Fee Related DE69218155T2 (de) | 1991-12-20 | 1992-12-15 | Hochspannung-Dünnfilmtransistor mit einer Drift-Zone mit einem linearen Dopierungsprofil und mit einer Feldplatte |
Country Status (4)
Country | Link |
---|---|
US (2) | US5246870A (de) |
EP (1) | EP0549042B1 (de) |
JP (1) | JP3456716B2 (de) |
DE (1) | DE69218155T2 (de) |
Families Citing this family (75)
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US5362979A (en) * | 1991-02-01 | 1994-11-08 | Philips Electronics North America Corporation | SOI transistor with improved source-high performance |
US6975296B1 (en) * | 1991-06-14 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
JP3405364B2 (ja) * | 1993-03-08 | 2003-05-12 | セイコーインスツルメンツ株式会社 | 半導体装置 |
US5378912A (en) * | 1993-11-10 | 1995-01-03 | Philips Electronics North America Corporation | Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region |
US5418391A (en) * | 1994-03-31 | 1995-05-23 | Vlsi Technology, Inc. | Semiconductor-on-insulator integrated circuit with selectively thinned channel region |
US5548147A (en) * | 1994-04-08 | 1996-08-20 | Texas Instruments Incorporated | Extended drain resurf lateral DMOS devices |
US6337232B1 (en) * | 1995-06-07 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region |
US5429981A (en) * | 1994-06-30 | 1995-07-04 | Honeywell Inc. | Method of making linear capacitors for high temperature applications |
JPH08222710A (ja) | 1995-02-17 | 1996-08-30 | Mitsubishi Electric Corp | 半導体装置 |
US5578506A (en) * | 1995-02-27 | 1996-11-26 | Alliedsignal Inc. | Method of fabricating improved lateral Silicon-On-Insulator (SOI) power device |
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TW360982B (en) * | 1996-01-26 | 1999-06-11 | Matsushita Electric Works Ltd | Thin film transistor of silicon-on-insulator type |
US5710451A (en) * | 1996-04-10 | 1998-01-20 | Philips Electronics North America Corporation | High-voltage lateral MOSFET SOI device having a semiconductor linkup region |
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DE19741928C1 (de) * | 1997-09-10 | 1998-09-24 | Siemens Ag | Halbleiterbauelement |
US6160290A (en) * | 1997-11-25 | 2000-12-12 | Texas Instruments Incorporated | Reduced surface field device having an extended field plate and method for forming the same |
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EP0965145B1 (de) * | 1997-12-24 | 2011-09-21 | Nxp B.V. | Hochspannungs-dünnfilmtransistor mit verbesserten einschaltszustand-charakteristiken und verfahren zur herstellung |
US6346451B1 (en) | 1997-12-24 | 2002-02-12 | Philips Electronics North America Corporation | Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode |
KR100257765B1 (ko) * | 1997-12-30 | 2000-06-01 | 김영환 | 기억소자 및 그 제조 방법 |
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US6133591A (en) * | 1998-07-24 | 2000-10-17 | Philips Electronics North America Corporation | Silicon-on-insulator (SOI) hybrid transistor device structure |
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US6621121B2 (en) * | 1998-10-26 | 2003-09-16 | Silicon Semiconductor Corporation | Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes |
US5998833A (en) | 1998-10-26 | 1999-12-07 | North Carolina State University | Power semiconductor devices having improved high frequency switching and breakdown characteristics |
US6028337A (en) * | 1998-11-06 | 2000-02-22 | Philips North America Corporation | Lateral thin-film silicon-on-insulator (SOI) device having lateral depletion means for depleting a portion of drift region |
US6232636B1 (en) | 1998-11-25 | 2001-05-15 | Philips Electronics North America Corporation | Lateral thin-film silicon-on-insulator (SOI) device having multiple doping profile slopes in the drift region |
US6023090A (en) * | 1998-12-07 | 2000-02-08 | Philips Electronics North America, Corporation | Lateral thin-film Silicon-On-Insulator (SOI) device having multiple zones in the drift region |
US5973341A (en) * | 1998-12-14 | 1999-10-26 | Philips Electronics North America Corporation | Lateral thin-film silicon-on-insulator (SOI) JFET device |
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JP3783156B2 (ja) * | 2001-10-17 | 2006-06-07 | 株式会社日立製作所 | 半導体装置 |
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US20130020632A1 (en) * | 2011-07-18 | 2013-01-24 | Disney Donald R | Lateral transistor with capacitively depleted drift region |
CN102646712B (zh) * | 2012-05-04 | 2015-05-06 | 上海先进半导体制造股份有限公司 | 一种ldmos器件及其制造方法 |
CN103915339B (zh) * | 2012-12-31 | 2016-09-07 | 中芯国际集成电路制造(上海)有限公司 | Ldmos及其形成方法 |
EP2757580A1 (de) * | 2013-01-22 | 2014-07-23 | Nxp B.V. | Bipolar-CMOS-DMOS-Prozesse |
US9570437B2 (en) * | 2014-01-09 | 2017-02-14 | Nxp B.V. | Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same |
EP3407385B1 (de) | 2017-05-23 | 2024-03-13 | NXP USA, Inc. | Zum schutz vor elektrostatischer entladung (esd) geeignetes halbleiterbauelement |
US10937872B1 (en) * | 2019-08-07 | 2021-03-02 | Vanguard International Semiconductor Corporation | Semiconductor structures |
CN112382656A (zh) * | 2020-11-13 | 2021-02-19 | 西安微电子技术研究所 | 一种横向扩散mos场效应晶体管及其制备方法 |
WO2023244222A1 (en) * | 2022-06-15 | 2023-12-21 | Power Integrations, Inc. | A double-channel semiconductor device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3845495A (en) * | 1971-09-23 | 1974-10-29 | Signetics Corp | High voltage, high frequency double diffused metal oxide semiconductor device |
JPS5368581A (en) * | 1976-12-01 | 1978-06-19 | Hitachi Ltd | Semiconductor device |
DE2706623A1 (de) * | 1977-02-16 | 1978-08-17 | Siemens Ag | Mis-fet fuer hohe source-drain-spannungen |
US4333225A (en) * | 1978-12-18 | 1982-06-08 | Xerox Corporation | Method of making a circular high voltage field effect transistor |
JPS57126131A (en) * | 1981-01-28 | 1982-08-05 | Toshiba Corp | Manufacture of semiconductor device |
US4373254A (en) * | 1981-04-06 | 1983-02-15 | Rca Corporation | Method of fabricating buried contacts |
FR2527385B1 (fr) * | 1982-04-13 | 1987-05-22 | Suwa Seikosha Kk | Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor |
JP2525630B2 (ja) * | 1987-12-16 | 1996-08-21 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
US4861731A (en) * | 1988-02-02 | 1989-08-29 | General Motors Corporation | Method of fabricating a lateral dual gate thyristor |
JPH0284718A (ja) * | 1988-09-21 | 1990-03-26 | Nec Corp | 半導体膜への不純物導入法 |
US4927772A (en) * | 1989-05-30 | 1990-05-22 | General Electric Company | Method of making high breakdown voltage semiconductor device |
US5113236A (en) * | 1990-12-14 | 1992-05-12 | North American Philips Corporation | Integrated circuit device particularly adapted for high voltage applications |
DE69209678T2 (de) * | 1991-02-01 | 1996-10-10 | Philips Electronics Nv | Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung |
-
1991
- 1991-12-20 US US07/811,554 patent/US5246870A/en not_active Expired - Lifetime
-
1992
- 1992-12-15 DE DE69218155T patent/DE69218155T2/de not_active Expired - Fee Related
- 1992-12-15 EP EP92203924A patent/EP0549042B1/de not_active Expired - Lifetime
- 1992-12-17 JP JP33703692A patent/JP3456716B2/ja not_active Expired - Fee Related
-
1993
- 1993-08-03 US US08/101,164 patent/US5412241A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5412241A (en) | 1995-05-02 |
JP3456716B2 (ja) | 2003-10-14 |
DE69218155T2 (de) | 1997-08-21 |
JPH05259456A (ja) | 1993-10-08 |
US5246870A (en) | 1993-09-21 |
EP0549042A2 (de) | 1993-06-30 |
EP0549042A3 (en) | 1993-10-06 |
EP0549042B1 (de) | 1997-03-12 |
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