DE69217427D1 - Bipolartransistor mit isoliertem Gate mit einer hohen Durchbruchspannung - Google Patents
Bipolartransistor mit isoliertem Gate mit einer hohen DurchbruchspannungInfo
- Publication number
- DE69217427D1 DE69217427D1 DE69217427T DE69217427T DE69217427D1 DE 69217427 D1 DE69217427 D1 DE 69217427D1 DE 69217427 T DE69217427 T DE 69217427T DE 69217427 T DE69217427 T DE 69217427T DE 69217427 D1 DE69217427 D1 DE 69217427D1
- Authority
- DE
- Germany
- Prior art keywords
- bipolar transistor
- breakdown voltage
- insulated gate
- gate bipolar
- high breakdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015556 catabolic process Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3225382A JPH0548111A (ja) | 1991-08-12 | 1991-08-12 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69217427D1 true DE69217427D1 (de) | 1997-03-27 |
DE69217427T2 DE69217427T2 (de) | 1997-06-19 |
Family
ID=16828483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69217427T Expired - Lifetime DE69217427T2 (de) | 1991-08-12 | 1992-08-12 | Bipolartransistor mit isoliertem Gate mit einer hohen Durchbruchspannung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5331184A (de) |
EP (1) | EP0528349B1 (de) |
JP (1) | JPH0548111A (de) |
KR (1) | KR950014279B1 (de) |
DE (1) | DE69217427T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4313170A1 (de) * | 1993-04-22 | 1994-10-27 | Abb Management Ag | Leistungshalbleiterbauelement |
DE4427988A1 (de) * | 1994-08-08 | 1996-02-15 | Abb Management Ag | MOS gesteuertes Leistungshalbleiterbauelement für hohe Spannungen |
KR970054363A (ko) * | 1995-12-30 | 1997-07-31 | 김광호 | 다이오드를 내장한 절연게이트 바이폴라 트랜지스터 및 그 제조방법 |
JP3488772B2 (ja) * | 1996-01-16 | 2004-01-19 | 三菱電機株式会社 | 半導体装置 |
JP3352592B2 (ja) * | 1996-05-16 | 2002-12-03 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
WO1997047044A1 (en) * | 1996-06-06 | 1997-12-11 | The Board Of Trustees Of The University Of Illinois | Insulated gate bipolar transistor with reduced losses |
US8314002B2 (en) * | 2000-05-05 | 2012-11-20 | International Rectifier Corporation | Semiconductor device having increased switching speed |
JP3727827B2 (ja) * | 2000-05-15 | 2005-12-21 | 株式会社東芝 | 半導体装置 |
JP4657578B2 (ja) * | 2001-02-02 | 2011-03-23 | 三菱電機株式会社 | 絶縁ゲート型バイポーラトランジスタ、半導体装置、絶縁ゲート型バイポーラトランジスタの製造方法、および半導体装置の製造方法 |
DE10117483A1 (de) * | 2001-04-07 | 2002-10-17 | Bosch Gmbh Robert | Halbleiterleistungsbauelement und entsprechendes Herstellungsverfahren |
JP2006210606A (ja) * | 2005-01-27 | 2006-08-10 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
EP1691413A1 (de) * | 2005-02-11 | 2006-08-16 | Axalto SA | Falschungssichere elektronische Komponente |
JP2007166125A (ja) * | 2005-12-12 | 2007-06-28 | Megachips Lsi Solutions Inc | 記憶システム |
DE102006001252B4 (de) * | 2006-01-10 | 2012-01-26 | Infineon Technologies Ag | Bipolares Leistungshalbleiterbauelement mit einem p-Emitter und höher dotierten Zonen in dem p-Emitter und Herstellungsverfahren |
JP2009004668A (ja) * | 2007-06-25 | 2009-01-08 | Toshiba Corp | 半導体装置 |
IT1402879B1 (it) | 2010-11-19 | 2013-09-27 | St Microelectronics Srl | Dispositivo igbt con regioni di emettitore sepolte |
CN103151251B (zh) * | 2011-12-07 | 2016-06-01 | 无锡华润华晶微电子有限公司 | 沟槽型绝缘栅双极型晶体管及其制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE8107136L (sv) * | 1980-12-02 | 1982-06-03 | Gen Electric | Styrelektrodforsedd likriktaranordning |
US4782379A (en) * | 1981-11-23 | 1988-11-01 | General Electric Company | Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device |
JPS60189260A (ja) * | 1984-03-09 | 1985-09-26 | Toshiba Corp | 逆阻止型ゲートターンオフサイリスタ |
JPS6445173A (en) * | 1987-08-13 | 1989-02-17 | Fuji Electric Co Ltd | Conductive modulation type mosfet |
JPH07107935B2 (ja) * | 1988-02-04 | 1995-11-15 | 株式会社東芝 | 半導体装置 |
JPH0648729B2 (ja) * | 1988-02-24 | 1994-06-22 | シーメンス、アクチエンゲゼルシシヤフト | 電界効果制御可能のバイポーラ・トランジスタ |
DE3939324A1 (de) * | 1989-11-28 | 1991-05-29 | Eupec Gmbh & Co Kg | Leistungs-halbleiterbauelement mit emitterkurzschluessen |
JPH03171777A (ja) * | 1989-11-30 | 1991-07-25 | Toshiba Corp | 半導体装置 |
JP2663679B2 (ja) * | 1990-04-20 | 1997-10-15 | 富士電機株式会社 | 伝導度変調型mosfet |
DE4123414A1 (de) * | 1991-07-15 | 1993-01-21 | Siemens Ag | Leistungs-halbleiterbauelement und verfahren zu dessen herstellung |
-
1991
- 1991-08-12 JP JP3225382A patent/JPH0548111A/ja active Pending
-
1992
- 1992-08-11 US US07/928,066 patent/US5331184A/en not_active Expired - Lifetime
- 1992-08-11 KR KR1019920014384A patent/KR950014279B1/ko not_active IP Right Cessation
- 1992-08-12 EP EP92113743A patent/EP0528349B1/de not_active Expired - Lifetime
- 1992-08-12 DE DE69217427T patent/DE69217427T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5331184A (en) | 1994-07-19 |
DE69217427T2 (de) | 1997-06-19 |
KR950014279B1 (ko) | 1995-11-24 |
JPH0548111A (ja) | 1993-02-26 |
EP0528349B1 (de) | 1997-02-12 |
KR930005259A (ko) | 1993-03-23 |
EP0528349A1 (de) | 1993-02-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
R071 | Expiry of right |
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