DE69129876T2 - Halbleiterbauelement mit laserschmelzbarer Sicherung - Google Patents

Halbleiterbauelement mit laserschmelzbarer Sicherung

Info

Publication number
DE69129876T2
DE69129876T2 DE69129876T DE69129876T DE69129876T2 DE 69129876 T2 DE69129876 T2 DE 69129876T2 DE 69129876 T DE69129876 T DE 69129876T DE 69129876 T DE69129876 T DE 69129876T DE 69129876 T2 DE69129876 T2 DE 69129876T2
Authority
DE
Germany
Prior art keywords
semiconductor component
fusible fuse
laser fusible
laser
fuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69129876T
Other languages
English (en)
Other versions
DE69129876D1 (de
Inventor
Yoshio Usuda
Hiroaki Itaba
Jumpei Kumagai
Seiji Kaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69129876D1 publication Critical patent/DE69129876D1/de
Publication of DE69129876T2 publication Critical patent/DE69129876T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE69129876T 1990-05-08 1991-05-08 Halbleiterbauelement mit laserschmelzbarer Sicherung Expired - Lifetime DE69129876T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2116837A JP2656368B2 (ja) 1990-05-08 1990-05-08 ヒューズの切断方法

Publications (2)

Publication Number Publication Date
DE69129876D1 DE69129876D1 (de) 1998-09-03
DE69129876T2 true DE69129876T2 (de) 1999-01-14

Family

ID=14696856

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69129876T Expired - Lifetime DE69129876T2 (de) 1990-05-08 1991-05-08 Halbleiterbauelement mit laserschmelzbarer Sicherung

Country Status (5)

Country Link
US (1) US5321300A (de)
EP (1) EP0456208B1 (de)
JP (1) JP2656368B2 (de)
KR (1) KR940001888B1 (de)
DE (1) DE69129876T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3256626B2 (ja) * 1994-05-15 2002-02-12 株式会社東芝 半導体装置
US5608257A (en) * 1995-06-07 1997-03-04 International Business Machines Corporation Fuse element for effective laser blow in an integrated circuit device
US5760674A (en) * 1995-11-28 1998-06-02 International Business Machines Corporation Fusible links with improved interconnect structure
JPH09213804A (ja) * 1996-01-29 1997-08-15 Mitsubishi Electric Corp ヒューズ層を有する半導体装置
US5652175A (en) * 1996-07-19 1997-07-29 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing a fuse structure
EP0887858A3 (de) * 1997-06-26 1999-02-03 Siemens Aktiengesellschaft Schutzschicht für laserdurchbrennbare Sicherungen in Halbleitervorrichtungen
CN1214549A (zh) * 1997-09-12 1999-04-21 西门子公司 改进的激光熔丝连接及其制造方法
JP3466929B2 (ja) 1998-10-05 2003-11-17 株式会社東芝 半導体装置
US6121074A (en) * 1998-11-05 2000-09-19 Siemens Aktiengesellschaft Fuse layout for improved fuse blow process window
JP2000208635A (ja) * 1999-01-19 2000-07-28 Mitsubishi Electric Corp 半導体装置
JP4190084B2 (ja) * 1999-04-22 2008-12-03 東芝マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
US6225652B1 (en) * 1999-08-02 2001-05-01 Clear Logic, Inc. Vertical laser fuse structure allowing increased packing density
JP2001244338A (ja) * 2000-02-25 2001-09-07 Toshiba Corp 半導体集積回路装置、半導体集積回路実装基板装置および半導体集積回路装置の入力保護機能解除方法
US6420216B1 (en) * 2000-03-14 2002-07-16 International Business Machines Corporation Fuse processing using dielectric planarization pillars
DE10026926C2 (de) * 2000-05-30 2002-06-20 Infineon Technologies Ag Halbleiteranordnung mit optischer Fuse
US6566730B1 (en) * 2000-11-27 2003-05-20 Lsi Logic Corporation Laser-breakable fuse link with alignment and break point promotion structures
US6873027B2 (en) 2001-10-26 2005-03-29 International Business Machines Corporation Encapsulated energy-dissipative fuse for integrated circuits and method of making the same
TW510019B (en) * 2001-11-19 2002-11-11 Nanya Technology Corp Fuse structure
US6737345B1 (en) * 2002-09-10 2004-05-18 Taiwan Semiconductor Manufacturing Company Scheme to define laser fuse in dual damascene CU process
KR100714483B1 (ko) * 2005-07-18 2007-05-04 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법
KR101043841B1 (ko) * 2008-10-14 2011-06-22 주식회사 하이닉스반도체 반도체 메모리 장치의 퓨즈
JP5720388B2 (ja) * 2011-04-12 2015-05-20 ミツミ電機株式会社 操作入力装置
JP6335184B2 (ja) * 2014-11-27 2018-05-30 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584819B2 (ja) * 1975-08-28 1983-01-27 株式会社東芝 ハンドウタイソウチ
JPS58170A (ja) * 1981-06-24 1983-01-05 Mitsubishi Electric Corp 半導体装置
JPS5948543B2 (ja) * 1981-10-13 1984-11-27 株式会社東芝 半導体装置
JPS6151966A (ja) * 1984-08-22 1986-03-14 Mitsubishi Electric Corp 半導体記憶装置
JPS61230336A (ja) * 1985-04-05 1986-10-14 Nec Ic Microcomput Syst Ltd 半導体集積回路装置
JPS62162344A (ja) * 1986-01-10 1987-07-18 Sanyo Electric Co Ltd 半導体装置
JPS633432A (ja) * 1986-06-24 1988-01-08 Nec Corp 半導体装置
US4826785A (en) * 1987-01-27 1989-05-02 Inmos Corporation Metallic fuse with optically absorptive layer
US4935801A (en) * 1987-01-27 1990-06-19 Inmos Corporation Metallic fuse with optically absorptive layer

Also Published As

Publication number Publication date
JPH0414245A (ja) 1992-01-20
KR910020879A (ko) 1991-12-20
JP2656368B2 (ja) 1997-09-24
EP0456208A1 (de) 1991-11-13
DE69129876D1 (de) 1998-09-03
KR940001888B1 (ko) 1994-03-10
EP0456208B1 (de) 1998-07-29
US5321300A (en) 1994-06-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition