DE69121845D1 - Halbleiterbauelement mit einer Eingangsschutzschaltung - Google Patents

Halbleiterbauelement mit einer Eingangsschutzschaltung

Info

Publication number
DE69121845D1
DE69121845D1 DE69121845T DE69121845T DE69121845D1 DE 69121845 D1 DE69121845 D1 DE 69121845D1 DE 69121845 T DE69121845 T DE 69121845T DE 69121845 T DE69121845 T DE 69121845T DE 69121845 D1 DE69121845 D1 DE 69121845D1
Authority
DE
Germany
Prior art keywords
protection circuit
semiconductor component
input protection
input
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69121845T
Other languages
English (en)
Other versions
DE69121845T2 (de
Inventor
Mitsuru Shimizu
Syuso Fujii
Kenji Numata
Masaharu Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of DE69121845D1 publication Critical patent/DE69121845D1/de
Application granted granted Critical
Publication of DE69121845T2 publication Critical patent/DE69121845T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69121845T 1990-11-30 1991-11-29 Halbleiterbauelement mit einer Eingangsschutzschaltung Expired - Lifetime DE69121845T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34061790 1990-11-30
JP34061890 1990-11-30

Publications (2)

Publication Number Publication Date
DE69121845D1 true DE69121845D1 (de) 1996-10-10
DE69121845T2 DE69121845T2 (de) 1997-02-06

Family

ID=26576752

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69121845T Expired - Lifetime DE69121845T2 (de) 1990-11-30 1991-11-29 Halbleiterbauelement mit einer Eingangsschutzschaltung

Country Status (4)

Country Link
US (2) US5594265A (de)
EP (1) EP0488340B1 (de)
KR (1) KR960002094B1 (de)
DE (1) DE69121845T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0535536B1 (de) * 1991-09-30 2001-12-05 Texas Instruments Incorporated Durch Verarmung kontrollierte Isolationsstufe
US5485024A (en) * 1993-12-30 1996-01-16 Linear Technology Corporation Electrostatic discharge circuit
JPH07283405A (ja) * 1994-04-13 1995-10-27 Toshiba Corp 半導体装置の保護回路
US5640127A (en) * 1995-11-07 1997-06-17 Tektronix, Inc. Input protection for high bandwidth amplifier
JP2943738B2 (ja) * 1996-11-29 1999-08-30 日本電気株式会社 半導体装置における静電保護回路
KR100214566B1 (ko) * 1997-04-22 1999-08-02 구본준 입력 보호회로
US5896313A (en) 1997-06-02 1999-04-20 Micron Technology, Inc. Vertical bipolar SRAM cell, array and system, and a method of making the cell and the array
KR100481836B1 (ko) * 1997-08-26 2006-05-29 삼성전자주식회사 이오에스 보호소자
US6016067A (en) * 1998-04-06 2000-01-18 Intersil Corporation Sample-and-hold circuit having reduced amplifier offset effects and related methods
US6069502A (en) * 1998-04-06 2000-05-30 Intersil Corporation Sample-and-hold circuit having reduced subthreshold conduction effects and related methods
US6002277A (en) * 1998-04-06 1999-12-14 Intersil Corporation Sample-and-hold circuit having reduced parasitic diode effects and related methods
JP4376348B2 (ja) * 1998-05-18 2009-12-02 パナソニック株式会社 半導体装置
JP3123984B2 (ja) * 1998-07-31 2001-01-15 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置
US6304423B1 (en) * 1999-06-08 2001-10-16 Delphi Technologies, Inc. Input protection circuit for a semiconductor device
DE19944487B4 (de) * 1999-09-16 2005-04-28 Infineon Technologies Ag ESD-Schutzanordnung für eine Halbleitervorrichtung
US6914306B1 (en) * 2000-08-25 2005-07-05 Micron Technology, Inc. Electrostatic discharge protection device
US6455896B1 (en) * 2001-04-25 2002-09-24 Macronix International Co., Ltd. Protection circuit for a memory array
US7808047B1 (en) * 2002-11-14 2010-10-05 Altera Corporation I/O ESD protection device for high performance circuits
US6919603B2 (en) * 2003-04-30 2005-07-19 Texas Instruments Incorporated Efficient protection structure for reverse pin-to-pin electrostatic discharge
KR101024483B1 (ko) * 2004-05-14 2011-03-23 주식회사 하이닉스반도체 정전기 방전 보호 소자
DE102005027368A1 (de) * 2005-06-14 2006-12-28 Atmel Germany Gmbh Halbleiterschutzstruktur für eine elektrostatische Entladung
WO2010095003A1 (en) * 2009-02-23 2010-08-26 Freescale Semiconductor, Inc. Semiconductor device with appraisal circuitry
JP2010214724A (ja) * 2009-03-16 2010-09-30 Alps Electric Co Ltd サーマルヘッド
US10411086B2 (en) * 2014-04-07 2019-09-10 Semiconductor Components Industries, Llc High voltage capacitor and method

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
US4100561A (en) * 1976-05-24 1978-07-11 Rca Corp. Protective circuit for MOS devices
JPS53110382A (en) * 1977-03-08 1978-09-27 Nippon Telegr & Teleph Corp <Ntt> Overvoltage protective circuit for integrated circuit
JPS5414173A (en) * 1977-07-04 1979-02-02 Seiko Epson Corp Semiconductor device
JPS58121663A (ja) * 1982-01-13 1983-07-20 Nec Corp 半導体集積回路装置
JPS58161375A (ja) * 1982-03-19 1983-09-24 Toshiba Corp 絶縁ゲ−ト形電界効果半導体集積回路の入力保護回路
JPH061833B2 (ja) * 1982-11-11 1994-01-05 株式会社東芝 Ｍｏｓ形半導体装置
JPS59111351A (ja) * 1982-12-16 1984-06-27 Seiko Instr & Electronics Ltd 入力保護回路
JP2537161B2 (ja) * 1983-11-17 1996-09-25 株式会社東芝 Ｍｏｓ型半導体装置
US4757363A (en) * 1984-09-14 1988-07-12 Harris Corporation ESD protection network for IGFET circuits with SCR prevention guard rings
JPS62224057A (ja) * 1986-03-26 1987-10-02 Hitachi Micro Comput Eng Ltd 半導体集積回路装置
JPS63137478A (ja) * 1986-11-28 1988-06-09 Ricoh Co Ltd 保護回路をもつ半導体装置の製造方法
JPS63220564A (ja) * 1987-03-09 1988-09-13 Fujitsu Ltd Ｃ−ｍｏｓｌｓｉの保護回路
JPH07105446B2 (ja) * 1988-01-11 1995-11-13 株式会社東芝 Ｍｏｓ型半導体装置の入力保護回路
JPH01286354A (ja) * 1988-05-12 1989-11-17 Mitsubishi Electric Corp 入力保護手段を有する半導体装置
JPH02119262A (ja) * 1988-10-28 1990-05-07 Toshiba Corp 半導体装置
GB8911360D0 (en) * 1989-05-17 1989-07-05 Sarnoff David Res Center Electronic charge protection devices
FR2649830B1 (fr) * 1989-07-13 1994-05-27 Sgs Thomson Microelectronics Structure de circuit integre cmos protege contre les decharges electrostatiques
JP2644342B2 (ja) * 1989-09-01 1997-08-25 東芝マイクロエレクトロニクス株式会社 入力保護回路を備えた半導体装置
JPH05139065A (ja) * 1991-11-19 1993-06-08 Matsushita Electric Ind Co Ltd 印刷用凹版とそれを用いたオフセツト印刷方法

Also Published As

Publication number Publication date
US5594265A (en) 1997-01-14
KR920010888A (ko) 1992-06-27
EP0488340B1 (de) 1996-09-04
KR960002094B1 (ko) 1996-02-10
US5949109A (en) 1999-09-07
DE69121845T2 (de) 1997-02-06
EP0488340A1 (de) 1992-06-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition