DE69121845T2 - Halbleiterbauelement mit einer Eingangsschutzschaltung - Google Patents
Halbleiterbauelement mit einer EingangsschutzschaltungInfo
- Publication number
- DE69121845T2 DE69121845T2 DE69121845T DE69121845T DE69121845T2 DE 69121845 T2 DE69121845 T2 DE 69121845T2 DE 69121845 T DE69121845 T DE 69121845T DE 69121845 T DE69121845 T DE 69121845T DE 69121845 T2 DE69121845 T2 DE 69121845T2
- Authority
- DE
- Germany
- Prior art keywords
- protection circuit
- semiconductor component
- input protection
- input
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34061790 | 1990-11-30 | ||
JP34061890 | 1990-11-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69121845D1 DE69121845D1 (de) | 1996-10-10 |
DE69121845T2 true DE69121845T2 (de) | 1997-02-06 |
Family
ID=26576752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69121845T Expired - Lifetime DE69121845T2 (de) | 1990-11-30 | 1991-11-29 | Halbleiterbauelement mit einer Eingangsschutzschaltung |
Country Status (4)
Country | Link |
---|---|
US (2) | US5594265A (de) |
EP (1) | EP0488340B1 (de) |
KR (1) | KR960002094B1 (de) |
DE (1) | DE69121845T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69232257T2 (de) * | 1991-09-30 | 2002-08-08 | Texas Industries Inc | Durch Verarmung kontrollierte Isolationsstufe |
US5485024A (en) * | 1993-12-30 | 1996-01-16 | Linear Technology Corporation | Electrostatic discharge circuit |
JPH07283405A (ja) * | 1994-04-13 | 1995-10-27 | Toshiba Corp | 半導体装置の保護回路 |
US5640127A (en) * | 1995-11-07 | 1997-06-17 | Tektronix, Inc. | Input protection for high bandwidth amplifier |
JP2943738B2 (ja) * | 1996-11-29 | 1999-08-30 | 日本電気株式会社 | 半導体装置における静電保護回路 |
KR100214566B1 (ko) * | 1997-04-22 | 1999-08-02 | 구본준 | 입력 보호회로 |
US5896313A (en) * | 1997-06-02 | 1999-04-20 | Micron Technology, Inc. | Vertical bipolar SRAM cell, array and system, and a method of making the cell and the array |
KR100481836B1 (ko) * | 1997-08-26 | 2006-05-29 | 삼성전자주식회사 | 이오에스 보호소자 |
US6069502A (en) * | 1998-04-06 | 2000-05-30 | Intersil Corporation | Sample-and-hold circuit having reduced subthreshold conduction effects and related methods |
US6016067A (en) * | 1998-04-06 | 2000-01-18 | Intersil Corporation | Sample-and-hold circuit having reduced amplifier offset effects and related methods |
US6002277A (en) * | 1998-04-06 | 1999-12-14 | Intersil Corporation | Sample-and-hold circuit having reduced parasitic diode effects and related methods |
JP4376348B2 (ja) * | 1998-05-18 | 2009-12-02 | パナソニック株式会社 | 半導体装置 |
JP3123984B2 (ja) * | 1998-07-31 | 2001-01-15 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路装置 |
US6304423B1 (en) * | 1999-06-08 | 2001-10-16 | Delphi Technologies, Inc. | Input protection circuit for a semiconductor device |
DE19944487B4 (de) * | 1999-09-16 | 2005-04-28 | Infineon Technologies Ag | ESD-Schutzanordnung für eine Halbleitervorrichtung |
US6914306B1 (en) * | 2000-08-25 | 2005-07-05 | Micron Technology, Inc. | Electrostatic discharge protection device |
US6455896B1 (en) * | 2001-04-25 | 2002-09-24 | Macronix International Co., Ltd. | Protection circuit for a memory array |
US7808047B1 (en) * | 2002-11-14 | 2010-10-05 | Altera Corporation | I/O ESD protection device for high performance circuits |
US6919603B2 (en) * | 2003-04-30 | 2005-07-19 | Texas Instruments Incorporated | Efficient protection structure for reverse pin-to-pin electrostatic discharge |
KR101024483B1 (ko) * | 2004-05-14 | 2011-03-23 | 주식회사 하이닉스반도체 | 정전기 방전 보호 소자 |
DE102005027368A1 (de) * | 2005-06-14 | 2006-12-28 | Atmel Germany Gmbh | Halbleiterschutzstruktur für eine elektrostatische Entladung |
US8853795B2 (en) * | 2009-02-23 | 2014-10-07 | Freescale Semiconductor, Inc. | Semiconductor device with appraisal circuitry |
JP2010214724A (ja) * | 2009-03-16 | 2010-09-30 | Alps Electric Co Ltd | サーマルヘッド |
US10411086B2 (en) | 2014-04-07 | 2019-09-10 | Semiconductor Components Industries, Llc | High voltage capacitor and method |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3787717A (en) * | 1971-12-09 | 1974-01-22 | Ibm | Over voltage protection circuit lateral bipolar transistor with gated collector junction |
US4100561A (en) * | 1976-05-24 | 1978-07-11 | Rca Corp. | Protective circuit for MOS devices |
JPS53110382A (en) * | 1977-03-08 | 1978-09-27 | Nippon Telegr & Teleph Corp <Ntt> | Overvoltage protective circuit for integrated circuit |
JPS5414173A (en) * | 1977-07-04 | 1979-02-02 | Seiko Epson Corp | Semiconductor device |
JPS58121663A (ja) * | 1982-01-13 | 1983-07-20 | Nec Corp | 半導体集積回路装置 |
JPS58161375A (ja) * | 1982-03-19 | 1983-09-24 | Toshiba Corp | 絶縁ゲ−ト形電界効果半導体集積回路の入力保護回路 |
JPH061833B2 (ja) * | 1982-11-11 | 1994-01-05 | 株式会社東芝 | Mos形半導体装置 |
JPS59111351A (ja) * | 1982-12-16 | 1984-06-27 | Seiko Instr & Electronics Ltd | 入力保護回路 |
JP2537161B2 (ja) * | 1983-11-17 | 1996-09-25 | 株式会社東芝 | Mos型半導体装置 |
US4757363A (en) * | 1984-09-14 | 1988-07-12 | Harris Corporation | ESD protection network for IGFET circuits with SCR prevention guard rings |
JPS62224057A (ja) * | 1986-03-26 | 1987-10-02 | Hitachi Micro Comput Eng Ltd | 半導体集積回路装置 |
JPS63137478A (ja) * | 1986-11-28 | 1988-06-09 | Ricoh Co Ltd | 保護回路をもつ半導体装置の製造方法 |
JPS63220564A (ja) * | 1987-03-09 | 1988-09-13 | Fujitsu Ltd | C−moslsiの保護回路 |
JPH07105446B2 (ja) * | 1988-01-11 | 1995-11-13 | 株式会社東芝 | Mos型半導体装置の入力保護回路 |
JPH01286354A (ja) * | 1988-05-12 | 1989-11-17 | Mitsubishi Electric Corp | 入力保護手段を有する半導体装置 |
JPH02119262A (ja) * | 1988-10-28 | 1990-05-07 | Toshiba Corp | 半導体装置 |
GB8911360D0 (en) * | 1989-05-17 | 1989-07-05 | Sarnoff David Res Center | Electronic charge protection devices |
FR2649830B1 (fr) * | 1989-07-13 | 1994-05-27 | Sgs Thomson Microelectronics | Structure de circuit integre cmos protege contre les decharges electrostatiques |
JP2644342B2 (ja) * | 1989-09-01 | 1997-08-25 | 東芝マイクロエレクトロニクス株式会社 | 入力保護回路を備えた半導体装置 |
JPH05139065A (ja) * | 1991-11-19 | 1993-06-08 | Matsushita Electric Ind Co Ltd | 印刷用凹版とそれを用いたオフセツト印刷方法 |
-
1991
- 1991-11-22 KR KR1019910020872A patent/KR960002094B1/ko not_active IP Right Cessation
- 1991-11-27 US US07/799,342 patent/US5594265A/en not_active Expired - Lifetime
- 1991-11-29 EP EP91120467A patent/EP0488340B1/de not_active Expired - Lifetime
- 1991-11-29 DE DE69121845T patent/DE69121845T2/de not_active Expired - Lifetime
-
1997
- 1997-01-30 US US08/790,804 patent/US5949109A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR960002094B1 (ko) | 1996-02-10 |
EP0488340A1 (de) | 1992-06-03 |
EP0488340B1 (de) | 1996-09-04 |
KR920010888A (ko) | 1992-06-27 |
US5949109A (en) | 1999-09-07 |
US5594265A (en) | 1997-01-14 |
DE69121845D1 (de) | 1996-10-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |