JPS5414173A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5414173A
JPS5414173A JP8023777A JP8023777A JPS5414173A JP S5414173 A JPS5414173 A JP S5414173A JP 8023777 A JP8023777 A JP 8023777A JP 8023777 A JP8023777 A JP 8023777A JP S5414173 A JPS5414173 A JP S5414173A
Authority
JP
Japan
Prior art keywords
semiconductor device
protect
providing
increase
different type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8023777A
Other languages
Japanese (ja)
Inventor
Yasutaka Nakasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP8023777A priority Critical patent/JPS5414173A/en
Publication of JPS5414173A publication Critical patent/JPS5414173A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To increase the insulation protective film and to protect the protective device, by providing a diffusion layer of different type close to the clamp diode and the resistive layer.
JP8023777A 1977-07-04 1977-07-04 Semiconductor device Pending JPS5414173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8023777A JPS5414173A (en) 1977-07-04 1977-07-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8023777A JPS5414173A (en) 1977-07-04 1977-07-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5414173A true JPS5414173A (en) 1979-02-02

Family

ID=13712718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8023777A Pending JPS5414173A (en) 1977-07-04 1977-07-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5414173A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949109A (en) * 1990-11-30 1999-09-07 Kabushiki Kaisha Toshiba Semiconductor device having input protection circuit
JP2014170919A (en) * 2013-02-06 2014-09-18 Seiko Instruments Inc Semiconductor device with esd protection circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949109A (en) * 1990-11-30 1999-09-07 Kabushiki Kaisha Toshiba Semiconductor device having input protection circuit
JP2014170919A (en) * 2013-02-06 2014-09-18 Seiko Instruments Inc Semiconductor device with esd protection circuit

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