DE69117077D1 - Verfahren zum Aufwachsen einer Dünnschicht aus Diamant oder c-BN - Google Patents

Verfahren zum Aufwachsen einer Dünnschicht aus Diamant oder c-BN

Info

Publication number
DE69117077D1
DE69117077D1 DE69117077T DE69117077T DE69117077D1 DE 69117077 D1 DE69117077 D1 DE 69117077D1 DE 69117077 T DE69117077 T DE 69117077T DE 69117077 T DE69117077 T DE 69117077T DE 69117077 D1 DE69117077 D1 DE 69117077D1
Authority
DE
Germany
Prior art keywords
diamond
growing
thin layer
thin
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69117077T
Other languages
English (en)
Other versions
DE69117077T2 (de
Inventor
Tsunenobu Kimoto
Tadashi Tomikawa
Nobuhiko Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP41895090A external-priority patent/JP3055181B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69117077D1 publication Critical patent/DE69117077D1/de
Publication of DE69117077T2 publication Critical patent/DE69117077T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69117077T 1990-03-06 1991-03-06 Verfahren zum Aufwachsen einer Dünnschicht aus Diamant oder c-BN Expired - Fee Related DE69117077T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5581990 1990-03-06
JP6776290 1990-03-16
JP41895090A JP3055181B2 (ja) 1990-03-06 1990-12-12 薄膜成長法

Publications (2)

Publication Number Publication Date
DE69117077D1 true DE69117077D1 (de) 1996-03-28
DE69117077T2 DE69117077T2 (de) 1996-06-27

Family

ID=27295717

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69117077T Expired - Fee Related DE69117077T2 (de) 1990-03-06 1991-03-06 Verfahren zum Aufwachsen einer Dünnschicht aus Diamant oder c-BN

Country Status (3)

Country Link
US (1) US5250149A (de)
EP (1) EP0445754B1 (de)
DE (1) DE69117077T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5236545A (en) * 1992-10-05 1993-08-17 The Board Of Governors Of Wayne State University Method for heteroepitaxial diamond film development
JP3104433B2 (ja) * 1992-10-16 2000-10-30 住友電気工業株式会社 ダイヤモンドのエッチング方法
JPH0794303A (ja) * 1993-05-04 1995-04-07 Kobe Steel Ltd 高配向性ダイヤモンド薄膜サーミスタ
US5442199A (en) * 1993-05-14 1995-08-15 Kobe Steel Usa, Inc. Diamond hetero-junction rectifying element
JPH06345592A (ja) * 1993-06-10 1994-12-20 Kobe Steel Ltd ダイヤモンド薄膜の形成方法
US5336368A (en) * 1993-07-08 1994-08-09 General Electric Company Method for depositing conductive metal traces on diamond
JP3334286B2 (ja) * 1993-09-30 2002-10-15 ソニー株式会社 ダイアモンド半導体の製造方法
JP3498363B2 (ja) * 1994-06-13 2004-02-16 住友電気工業株式会社 ダイヤモンドの合成方法
US5587210A (en) * 1994-06-28 1996-12-24 The United States Of America As Represented By The Secretary Of The Navy Growing and releasing diamonds
JP3169114B2 (ja) * 1995-05-29 2001-05-21 信越半導体株式会社 単結晶薄膜の製造方法
US5665435A (en) * 1995-08-31 1997-09-09 University Of Pittsburgh Of The Commonwealth System Of Higher Education Method for fluorination of diamond surfaces
KR100445275B1 (ko) * 1996-05-27 2004-10-14 스미토모덴키고교가부시키가이샤 공구팁및그공구팁을구비한접합공구및그접합공구의제어방법
US6885466B1 (en) * 1999-07-16 2005-04-26 Denso Corporation Method for measuring thickness of oxide film
JP3138705B1 (ja) * 1999-08-31 2001-02-26 工業技術院長 ダイヤモンドｐｎ接合ダイオードおよびその作製方法
US6833027B2 (en) * 2001-09-26 2004-12-21 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing high voltage schottky diamond diodes with low boron doping
GB0130005D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
DE10259174B4 (de) * 2002-12-18 2006-10-12 Robert Bosch Gmbh Verwendung eines tribologisch beanspruchten Bauelements
JP4123496B2 (ja) * 2004-11-25 2008-07-23 独立行政法人物質・材料研究機構 ダイヤモンド紫外光センサー
WO2007015431A1 (ja) * 2005-08-01 2007-02-08 National Institute For Materials Science ダイヤモンド紫外光センサー
JP4066440B2 (ja) * 2006-05-17 2008-03-26 トーヨーエイテック株式会社 ダイヤモンド様薄膜を備えた医療器具及びその製造方法
CN101517759B (zh) * 2006-09-26 2012-07-04 昭和电工株式会社 Ⅲ族氮化物化合物半导体发光元件的制造方法
CN103710748B (zh) * 2013-12-12 2016-04-06 王宏兴 一种单晶金刚石薄膜的生长方法
US9469918B2 (en) 2014-01-24 2016-10-18 Ii-Vi Incorporated Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon
US20170037534A1 (en) * 2015-08-07 2017-02-09 North Carolina State University Direct conversion of h-bn into c-bn and structures for a variety of applications
CN105695949A (zh) * 2016-02-24 2016-06-22 苏州乐晶新材料科技有限公司 一种金刚石涂层刀具退涂的方法
WO2018005619A1 (en) 2016-06-28 2018-01-04 North Carolina State University Synthesis and processing of pure and nv nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications
CN107146756A (zh) * 2017-06-27 2017-09-08 中国科学院微电子研究所 一种金刚石基底场效应晶体管制备方法
CN108538970B (zh) * 2018-03-09 2020-07-07 华灿光电（浙江）有限公司 一种发光二极管的制备方法
DE102018114776A1 (de) * 2018-06-20 2019-12-24 Khs Corpoplast Gmbh Vorrichtung zum Beschichten von Behältern mit einer Barriereschicht und Verfahren zur Heizung eines Behälters

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US3501336A (en) * 1967-12-11 1970-03-17 Texas Instruments Inc Method for etching single crystal silicon substrates and depositing silicon thereon
US3714334A (en) * 1971-05-03 1973-01-30 Diamond Squared Ind Inc Process for epitaxial growth of diamonds
JPS5821324A (ja) * 1981-07-30 1983-02-08 Agency Of Ind Science & Technol 水素添加した半導体薄膜成長用金属表面基板の前処理方法
US4486286A (en) * 1982-09-28 1984-12-04 Nerken Research Corp. Method of depositing a carbon film on a substrate and products obtained thereby
JPS59137396A (ja) * 1983-01-25 1984-08-07 Natl Inst For Res In Inorg Mater Ｐ型半導体ダイヤモンドの合成法
JPS60186500A (ja) * 1984-03-06 1985-09-21 Nec Corp 気相からのダイヤモンド合成法
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JPS63121667A (ja) * 1986-11-10 1988-05-25 Semiconductor Energy Lab Co Ltd 薄膜形成装置
JPS63185894A (ja) * 1987-01-28 1988-08-01 Matsushita Electric Ind Co Ltd ダイヤモンド薄膜又はダイヤモンド状薄膜の製造方法
KR900008505B1 (ko) * 1987-02-24 1990-11-24 세미콘덕터 에너지 라보라터리 캄파니 리미티드 탄소 석출을 위한 마이크로파 강화 cvd 방법
JPH0660401B2 (ja) * 1987-08-04 1994-08-10 工業技術院長 シリコン薄膜製造方法
JPH0645455B2 (ja) * 1987-09-30 1994-06-15 岩谷産業株式会社 ホウ素又はその化合物の化学的クリーニング方法
JPH0196099A (ja) * 1987-10-09 1989-04-14 Osaka Diamond Ind Co Ltd 結晶材料表面のクリーニング方法
JPH0668152B2 (ja) * 1988-01-27 1994-08-31 株式会社半導体エネルギー研究所 薄膜形成装置
JPH0288497A (ja) * 1988-06-09 1990-03-28 Toshiba Corp 単結晶ダイヤモンド粒子の製造方法
KR940000906B1 (ko) * 1988-11-21 1994-02-04 가부시키가이샤 도시바 반도체장치의 제조방법

Also Published As

Publication number Publication date
DE69117077T2 (de) 1996-06-27
EP0445754A1 (de) 1991-09-11
EP0445754B1 (de) 1996-02-14
US5250149A (en) 1993-10-05

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Legal Events

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8339 Ceased/non-payment of the annual fee