DE69028871T2 - Maske, Herstellungsverfahren und Musterherstellung mit einer solchen Maske - Google Patents

Maske, Herstellungsverfahren und Musterherstellung mit einer solchen Maske

Info

Publication number
DE69028871T2
DE69028871T2 DE69028871T DE69028871T DE69028871T2 DE 69028871 T2 DE69028871 T2 DE 69028871T2 DE 69028871 T DE69028871 T DE 69028871T DE 69028871 T DE69028871 T DE 69028871T DE 69028871 T2 DE69028871 T2 DE 69028871T2
Authority
DE
Germany
Prior art keywords
mask
manufacturing process
pattern production
pattern
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69028871T
Other languages
English (en)
Other versions
DE69028871D1 (de
Inventor
Toshiaki Kawabata
Kenji Nakagawa
Seiichiro Yamaguchi
Masao Taguchi
Kazuhiko Sumi
Yuichiro Yanagishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69028871D1 publication Critical patent/DE69028871D1/de
Application granted granted Critical
Publication of DE69028871T2 publication Critical patent/DE69028871T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/467—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof
DE69028871T 1989-04-28 1990-04-26 Maske, Herstellungsverfahren und Musterherstellung mit einer solchen Maske Expired - Fee Related DE69028871T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11167589 1989-04-28
JP20683789 1989-08-11
JP2662390 1990-02-06

Publications (2)

Publication Number Publication Date
DE69028871D1 DE69028871D1 (de) 1996-11-21
DE69028871T2 true DE69028871T2 (de) 1997-02-27

Family

ID=27285482

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69028871T Expired - Fee Related DE69028871T2 (de) 1989-04-28 1990-04-26 Maske, Herstellungsverfahren und Musterherstellung mit einer solchen Maske
DE69033996T Expired - Fee Related DE69033996T2 (de) 1989-04-28 1990-04-26 Maske, Verfahren zur Herstellung der Maske und Verfahren zur Musterherstellung mit einer Maske

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69033996T Expired - Fee Related DE69033996T2 (de) 1989-04-28 1990-04-26 Maske, Verfahren zur Herstellung der Maske und Verfahren zur Musterherstellung mit einer Maske

Country Status (5)

Country Link
US (4) US5489509A (de)
EP (2) EP0653679B1 (de)
JP (1) JP2862183B2 (de)
KR (1) KR940005282B1 (de)
DE (2) DE69028871T2 (de)

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Also Published As

Publication number Publication date
DE69028871D1 (de) 1996-11-21
US5624791A (en) 1997-04-29
EP0653679A2 (de) 1995-05-17
KR900017127A (ko) 1990-11-15
US5786115A (en) 1998-07-28
US5489509A (en) 1996-02-06
EP0395425B1 (de) 1996-10-16
JP2862183B2 (ja) 1999-02-24
KR940005282B1 (ko) 1994-06-15
DE69033996T2 (de) 2002-12-05
DE69033996D1 (de) 2002-09-26
EP0395425A3 (de) 1991-03-13
EP0653679B1 (de) 2002-08-21
JPH03267940A (ja) 1991-11-28
EP0653679A3 (de) 1995-12-13
US5674646A (en) 1997-10-07
EP0395425A2 (de) 1990-10-31

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