DE68921547D1 - Herstellungsverfahren für eine Maske für lithographische Strukturierung. - Google Patents

Herstellungsverfahren für eine Maske für lithographische Strukturierung.

Info

Publication number
DE68921547D1
DE68921547D1 DE68921547T DE68921547T DE68921547D1 DE 68921547 D1 DE68921547 D1 DE 68921547D1 DE 68921547 T DE68921547 T DE 68921547T DE 68921547 T DE68921547 T DE 68921547T DE 68921547 D1 DE68921547 D1 DE 68921547D1
Authority
DE
Germany
Prior art keywords
mask
manufacturing process
lithographic structuring
structuring
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68921547T
Other languages
English (en)
Other versions
DE68921547T2 (de
Inventor
Kiichi Sakamoto
Hiroshi Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE68921547D1 publication Critical patent/DE68921547D1/de
Application granted granted Critical
Publication of DE68921547T2 publication Critical patent/DE68921547T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE68921547T 1988-11-07 1989-10-27 Herstellungsverfahren für eine Maske für lithographische Strukturierung. Expired - Fee Related DE68921547T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28067188A JP2725319B2 (ja) 1988-11-07 1988-11-07 荷電粒子線マスクの製造方法

Publications (2)

Publication Number Publication Date
DE68921547D1 true DE68921547D1 (de) 1995-04-13
DE68921547T2 DE68921547T2 (de) 1995-07-06

Family

ID=17628308

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68921547T Expired - Fee Related DE68921547T2 (de) 1988-11-07 1989-10-27 Herstellungsverfahren für eine Maske für lithographische Strukturierung.

Country Status (4)

Country Link
EP (1) EP0368089B1 (de)
JP (1) JP2725319B2 (de)
KR (1) KR940002732B1 (de)
DE (1) DE68921547T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234781A (en) * 1988-11-07 1993-08-10 Fujitsu Limited Mask for lithographic patterning and a method of manufacturing the same
FR2681855B1 (fr) * 1991-09-27 1993-12-31 Corning Inc Procede de production de composants en optique integree par echange d'ions utilisant un masque en silicium, et procedes pour la realisation et l'elimination finale dudit masque.
US5326426A (en) * 1991-11-14 1994-07-05 Tam Andrew C Undercut membrane mask for high energy photon patterning
WO2001091167A1 (fr) 2000-05-25 2001-11-29 Toppan Printing Co., Ltd. Substrat pour masque de transfert, masque de transfert et son procede de fabrication
US6372391B1 (en) * 2000-09-25 2002-04-16 The University Of Houston Template mask lithography utilizing structured beam
US7232631B2 (en) 2003-05-08 2007-06-19 Dai Nippon Prinitng Co., Ltd. Mask for charged particle beam exposure, and method of forming the same
WO2023138081A1 (en) * 2022-01-21 2023-07-27 The Hong Kong University Of Science And Technology Corrugated high-resolution shadow masks
CN115747712A (zh) * 2022-08-25 2023-03-07 京东方科技集团股份有限公司 掩膜板及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4022927A (en) * 1975-06-30 1977-05-10 International Business Machines Corporation Methods for forming thick self-supporting masks
JPS5337366U (de) * 1976-09-03 1978-04-01
IT1109829B (it) * 1977-07-05 1985-12-23 Ibm Processo di fabbricazione di cercuiti integrati
DE2922416A1 (de) * 1979-06-01 1980-12-11 Ibm Deutschland Schattenwurfmaske zum strukturieren von oberflaechenbereichen und verfahren zu ihrer herstellung
US4708919A (en) * 1985-08-02 1987-11-24 Micronix Corporation Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure
DE3677005D1 (de) * 1986-05-06 1991-02-21 Ibm Deutschland Maske fuer die ionen-, elektronen- oder roentgenstrahllithographie und verfahren zur ihrer herstellung.
US4897360A (en) * 1987-12-09 1990-01-30 Wisconsin Alumni Research Foundation Polysilicon thin film process

Also Published As

Publication number Publication date
JP2725319B2 (ja) 1998-03-11
KR940002732B1 (en) 1994-03-31
KR900008661A (ko) 1990-06-04
EP0368089A2 (de) 1990-05-16
EP0368089A3 (de) 1991-05-22
JPH02126630A (ja) 1990-05-15
DE68921547T2 (de) 1995-07-06
EP0368089B1 (de) 1995-03-08

Similar Documents

Publication Publication Date Title
DE69113076D1 (de) Herstellungsverfahren für eine Karte.
DE69115062D1 (de) Maske für photolithographische Strukturierung.
DE68928847T2 (de) Fabrikationsverfahren für photonische, integrierte Schaltkreise
DE69009410T2 (de) Herstellungsverfahren eines Druckkopfes.
DE69218344T2 (de) Herstellungsverfahren für eine gedruckte Schaltung
DE69131497T2 (de) Photomaske, die in der Photolithographie benutzt wird und ein Herstellungsverfahren derselben
DE59008438D1 (de) Aktuator für eine kybernetisce Lenkung.
DE69028871D1 (de) Maske, Herstellungsverfahren und Musterherstellung mit einer solchen Maske
DE3762711D1 (de) Maske.
DE69023423T2 (de) Masken-ROM-Herstellungsverfahren.
DE68909128T2 (de) Maske.
DE69132303D1 (de) Maske für Photolithographie
DE3886488D1 (de) Maske.
DE59102388D1 (de) Herstellungsverfahren für eine flachdichtung.
DE68922144D1 (de) Entwicklungsverfahren für vorsensibilisierte Druckplatten.
DE3789986T2 (de) Drei-Schichten-Resistverfahren für Photolithographie mit hohem Auflösungsvermögen.
DE68913324T2 (de) Federaufbau für eine Matrize.
DE69006278D1 (de) Herstellungsverfahren für einen Polyimidfilm.
DE68921547D1 (de) Herstellungsverfahren für eine Maske für lithographische Strukturierung.
DE68919835T2 (de) Drucksatz für eine frankiermaschine, eine briefstempelmaschine oder dergleichen.
DE69010353T2 (de) Aperturmusterdruckplatte für eine Schattenmaske und Herstellungsverfahren dafür.
DE69020023D1 (de) Feinmusterherstellungsverfahren.
KR910008791A (ko) 위상시프터를 갖는 마스크와 그 제조방법 및 그 마스크를 사용한 패턴형성방법
DE69017170D1 (de) Herstellungsverfahren für eine bis(3-Nitrophenoxy)-Verbindung.
DE68920412T2 (de) Schablone für eine Lochstanzmaschine.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee