DE68924841T2 - Optoelektronische Vorrichtung mit grossem Energiebandabstand und Herstellungsverfahren. - Google Patents

Optoelektronische Vorrichtung mit grossem Energiebandabstand und Herstellungsverfahren.

Info

Publication number
DE68924841T2
DE68924841T2 DE68924841T DE68924841T DE68924841T2 DE 68924841 T2 DE68924841 T2 DE 68924841T2 DE 68924841 T DE68924841 T DE 68924841T DE 68924841 T DE68924841 T DE 68924841T DE 68924841 T2 DE68924841 T2 DE 68924841T2
Authority
DE
Germany
Prior art keywords
manufacturing process
band gap
optoelectronic device
energy band
large energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68924841T
Other languages
English (en)
Other versions
DE68924841D1 (de
Inventor
Chih-Ping Kuo
Robert M Fletcher
Timothy D Osentowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds LLC
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of DE68924841D1 publication Critical patent/DE68924841D1/de
Publication of DE68924841T2 publication Critical patent/DE68924841T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
DE68924841T 1989-01-19 1989-12-18 Optoelektronische Vorrichtung mit grossem Energiebandabstand und Herstellungsverfahren. Expired - Lifetime DE68924841T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/300,003 US5060028A (en) 1989-01-19 1989-01-19 High band-gap opto-electronic device

Publications (2)

Publication Number Publication Date
DE68924841D1 DE68924841D1 (de) 1995-12-21
DE68924841T2 true DE68924841T2 (de) 1996-05-02

Family

ID=23157248

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68924841T Expired - Lifetime DE68924841T2 (de) 1989-01-19 1989-12-18 Optoelektronische Vorrichtung mit grossem Energiebandabstand und Herstellungsverfahren.

Country Status (4)

Country Link
US (1) US5060028A (de)
EP (1) EP0378919B1 (de)
JP (1) JP3143662B2 (de)
DE (1) DE68924841T2 (de)

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Publication number Priority date Publication date Assignee Title
US5235194A (en) * 1989-09-28 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor light-emitting device with InGaAlP
DE4011145A1 (de) * 1990-04-06 1991-10-10 Telefunken Electronic Gmbh Lumineszenz-halbleiterelement
DE4031290C2 (de) * 1990-10-04 1994-09-08 Telefunken Microelectron Halbleiteranordnung, insbesondere Infrarotdiode und Verfahren zum Herstellen
US5126803A (en) * 1991-03-11 1992-06-30 The Boeing Company Broadband quantum well LED
US5262657A (en) * 1992-01-24 1993-11-16 The United States Of America As Represented By The Secretary Of The Army Optically activated wafer-scale pulser with AlGaAs epitaxial layer
US5365541A (en) * 1992-01-29 1994-11-15 Trw Inc. Mirror with photonic band structure
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5576559A (en) * 1994-11-01 1996-11-19 Intevac, Inc. Heterojunction electron transfer device
US5770868A (en) * 1995-11-08 1998-06-23 Martin Marietta Corporation GaAs substrate with compositionally graded AlGaAsSb buffer for fabrication of high-indium fets
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
US6232138B1 (en) * 1997-12-01 2001-05-15 Massachusetts Institute Of Technology Relaxed InxGa(1-x)as buffers
US6888175B1 (en) 1998-05-29 2005-05-03 Massachusetts Institute Of Technology Compound semiconductor structure with lattice and polarity matched heteroepitaxial layers
US20010020703A1 (en) 1998-07-24 2001-09-13 Nathan F. Gardner Algainp light emitting devices with thin active layers
JP2000068554A (ja) 1998-08-21 2000-03-03 Sharp Corp 半導体発光素子
WO2001052373A2 (de) * 2000-01-13 2001-07-19 Infineon Technologies Ag Halbleiterlaserstruktur
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US20040204645A1 (en) * 2003-04-10 2004-10-14 Vahid Saadat Scope position and orientation feedback device
US7474681B2 (en) * 2005-05-13 2009-01-06 Industrial Technology Research Institute Alternating current light-emitting device
EP1883119B1 (de) 2006-07-27 2015-11-04 OSRAM Opto Semiconductors GmbH Halbleiter-Schichtstruktur mit Übergitter
EP1883141B1 (de) 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
DE102006046237A1 (de) * 2006-07-27 2008-01-31 Osram Opto Semiconductors Gmbh Halbleiter-Schichtstruktur mit Übergitter
EP1883140B1 (de) 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten
WO2015170848A1 (ko) 2014-05-08 2015-11-12 엘지이노텍 주식회사 발광소자

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1385634A (en) * 1973-08-21 1975-02-26 Standard Telephones Cables Ltd Gaa1as lasers
US4016586A (en) * 1974-03-27 1977-04-05 Innotech Corporation Photovoltaic heterojunction device employing a wide bandgap material as an active layer
US3963539A (en) * 1974-12-17 1976-06-15 International Business Machines Corporation Two stage heteroepitaxial deposition process for GaAsP/Si LED's
US3995303A (en) * 1975-06-05 1976-11-30 Bell Telephone Laboratories, Incorporated Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector
US4053920A (en) * 1975-11-10 1977-10-11 The United States Of America As Represented By The Secretary Of The Army Step graded photocathode
JPS54146984A (en) * 1978-05-10 1979-11-16 Matsushita Electric Ind Co Ltd Luminous element
JPS6038036B2 (ja) * 1979-04-23 1985-08-29 松下電器産業株式会社 電場発光素子
JPS5771191A (en) * 1980-10-21 1982-05-01 Fujitsu Ltd Photosemiconductor element
US4383259A (en) * 1980-11-24 1983-05-10 World Navigation Electronics Inc. Marine navigational aid
US4476477A (en) * 1982-02-23 1984-10-09 At&T Bell Laboratories Graded bandgap multilayer avalanche photodetector with energy step backs
US4512022A (en) * 1982-07-13 1985-04-16 At&T Bell Laboratories Semiconductor laser having graded index waveguide
US4607272A (en) * 1983-10-06 1986-08-19 The United States Of America As Represented By The United States Department Of Energy Electro-optical SLS devices for operating at new wavelength ranges
US4558336A (en) * 1984-03-02 1985-12-10 The United States Of America As Represented By The Secretary Of The Army MBE Growth technique for matching superlattices grown on GaAs substrates
JPS60214524A (ja) * 1984-04-10 1985-10-26 Shin Etsu Handotai Co Ltd 燐化砒化ガリウムエピタキシヤル膜の成長方法
JPH0650723B2 (ja) * 1984-10-17 1994-06-29 日本電気株式会社 エピタキシヤル成長方法
JPS6218082A (ja) * 1985-07-16 1987-01-27 Sharp Corp 半導体レ−ザ素子
JPH0821748B2 (ja) * 1985-09-04 1996-03-04 株式会社日立製作所 半導体レ−ザ装置
JPH0732285B2 (ja) * 1986-02-28 1995-04-10 株式会社東芝 半導体レ−ザ装置
JPS63208296A (ja) * 1987-02-24 1988-08-29 Sharp Corp 半導体装置

Also Published As

Publication number Publication date
EP0378919B1 (de) 1995-11-15
JP3143662B2 (ja) 2001-03-07
EP0378919A2 (de) 1990-07-25
JPH02234477A (ja) 1990-09-17
EP0378919A3 (de) 1991-07-31
DE68924841D1 (de) 1995-12-21
US5060028A (en) 1991-10-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA

8327 Change in the person/name/address of the patent owner

Owner name: LUMILEDS LIGHTING, U.S., LLC, SAN JOSE, CALIF., US

8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY,LLC, SAN JOS, US