IT9067073A0 - Dispositivo laser a semiconduttore e procedimento per la produzione dello stesso. - Google Patents
Dispositivo laser a semiconduttore e procedimento per la produzione dello stesso.Info
- Publication number
- IT9067073A0 IT9067073A0 IT9067073A IT6707390A IT9067073A0 IT 9067073 A0 IT9067073 A0 IT 9067073A0 IT 9067073 A IT9067073 A IT 9067073A IT 6707390 A IT6707390 A IT 6707390A IT 9067073 A0 IT9067073 A0 IT 9067073A0
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- production
- semiconductor laser
- laser device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0021—Degradation or life time measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1024452A JP2686306B2 (ja) | 1989-02-01 | 1989-02-01 | 半導体レーザ装置とその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
IT9067073A0 true IT9067073A0 (it) | 1990-01-31 |
IT9067073A1 IT9067073A1 (it) | 1990-08-02 |
IT1240232B IT1240232B (it) | 1993-11-27 |
Family
ID=12138551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT67073A IT1240232B (it) | 1989-02-01 | 1990-01-31 | Dispositivo laser a semiconduttore e procedimento per la produzione dello stesso. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5018158A (it) |
JP (1) | JP2686306B2 (it) |
IT (1) | IT1240232B (it) |
NL (1) | NL9000255A (it) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0629621A (ja) * | 1992-07-09 | 1994-02-04 | Mitsubishi Electric Corp | 半導体レーザ装置 |
US5523256A (en) * | 1993-07-21 | 1996-06-04 | Matsushita Electric Industrial Co., Ltd. | Method for producing a semiconductor laser |
JPH07226566A (ja) * | 1994-02-10 | 1995-08-22 | Nec Corp | 量子井戸半導体レーザおよびその製造方法 |
JP3950604B2 (ja) * | 1999-12-28 | 2007-08-01 | 日本オプネクスト株式会社 | 半導体レーザ装置、半導体レーザアレー装置及び光伝送装置 |
US6977953B2 (en) * | 2001-07-27 | 2005-12-20 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device and method of fabricating the same |
JP2004119817A (ja) * | 2002-09-27 | 2004-04-15 | Sharp Corp | 半導体レーザ素子およびその製造方法 |
JP4502867B2 (ja) * | 2005-04-12 | 2010-07-14 | パナソニック株式会社 | 半導体レーザ装置および半導体レーザ装置の製造方法 |
JP2008091713A (ja) * | 2006-10-03 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 二波長半導体レーザ装置 |
US11079118B2 (en) | 2016-04-12 | 2021-08-03 | Whirlpool Corporation | Combination microwave and hood system |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54154984A (en) * | 1978-05-12 | 1979-12-06 | Nec Corp | Semiconductor laser device and its manufacture |
US4371966A (en) * | 1980-11-06 | 1983-02-01 | Xerox Corporation | Heterostructure lasers with combination active strip and passive waveguide strip |
JPS60101989A (ja) * | 1983-11-08 | 1985-06-06 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レ−ザ及びその製造方法 |
JPS6356979A (ja) * | 1986-08-27 | 1988-03-11 | Fujitsu Ltd | 半導体レーザ |
JPH0648742B2 (ja) * | 1987-02-09 | 1994-06-22 | 日本電気株式会社 | 半導体レ−ザの製造方法 |
JPH0648743B2 (ja) * | 1987-02-18 | 1994-06-22 | 三菱電機株式会社 | 半導体レ−ザ装置の製造方法 |
JPS649682A (en) * | 1987-07-01 | 1989-01-12 | Nec Corp | Distributed feedback semiconductor laser |
JPH01235397A (ja) * | 1988-03-16 | 1989-09-20 | Mitsubishi Electric Corp | 半導体レーザ |
GB2222307B (en) * | 1988-07-22 | 1992-04-01 | Mitsubishi Electric Corp | Semiconductor laser |
US4961197A (en) * | 1988-09-07 | 1990-10-02 | Hitachi, Ltd. | Semiconductor laser device |
-
1989
- 1989-02-01 JP JP1024452A patent/JP2686306B2/ja not_active Expired - Lifetime
-
1990
- 1990-01-30 US US07/472,290 patent/US5018158A/en not_active Expired - Fee Related
- 1990-01-31 IT IT67073A patent/IT1240232B/it active IP Right Grant
- 1990-02-01 NL NL9000255A patent/NL9000255A/nl not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPH02203585A (ja) | 1990-08-13 |
US5018158A (en) | 1991-05-21 |
IT9067073A1 (it) | 1990-08-02 |
NL9000255A (nl) | 1990-09-03 |
IT1240232B (it) | 1993-11-27 |
JP2686306B2 (ja) | 1997-12-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19960129 |