DE69021273D1 - Integrierte Speicherschaltung mit einem Leseverstärker. - Google Patents

Integrierte Speicherschaltung mit einem Leseverstärker.

Info

Publication number
DE69021273D1
DE69021273D1 DE69021273T DE69021273T DE69021273D1 DE 69021273 D1 DE69021273 D1 DE 69021273D1 DE 69021273 T DE69021273 T DE 69021273T DE 69021273 T DE69021273 T DE 69021273T DE 69021273 D1 DE69021273 D1 DE 69021273D1
Authority
DE
Germany
Prior art keywords
sense amplifier
memory circuit
integrated memory
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69021273T
Other languages
English (en)
Other versions
DE69021273T2 (de
Inventor
Evert Seevinck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69021273D1 publication Critical patent/DE69021273D1/de
Publication of DE69021273T2 publication Critical patent/DE69021273T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065Differential amplifiers of latching type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
DE69021273T 1989-05-31 1990-05-25 Integrierte Speicherschaltung mit einem Leseverstärker. Expired - Lifetime DE69021273T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8901376A NL8901376A (nl) 1989-05-31 1989-05-31 Geintegreerde geheugenschakeling met een leesversterker.

Publications (2)

Publication Number Publication Date
DE69021273D1 true DE69021273D1 (de) 1995-09-07
DE69021273T2 DE69021273T2 (de) 1996-04-04

Family

ID=19854753

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69021273T Expired - Lifetime DE69021273T2 (de) 1989-05-31 1990-05-25 Integrierte Speicherschaltung mit einem Leseverstärker.

Country Status (11)

Country Link
EP (1) EP0400728B1 (de)
JP (1) JP2760634B2 (de)
KR (1) KR0155374B1 (de)
CN (1) CN1019614B (de)
CA (1) CA2017607C (de)
DE (1) DE69021273T2 (de)
ES (1) ES2077630T3 (de)
FI (1) FI902648A0 (de)
HK (1) HK61896A (de)
IE (1) IE71667B1 (de)
NL (1) NL8901376A (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2531226Y2 (ja) * 1992-11-26 1997-04-02 喜和 石渡 紙幣の収納機構
EP0747903B1 (de) * 1995-04-28 2002-04-10 STMicroelectronics S.r.l. Leseschaltung für Speicherzellen mit niedriger Versorgungsspannung
JPH10133908A (ja) * 1996-10-29 1998-05-22 Mitsubishi Electric Corp マイクロプロセッサ
US6754119B2 (en) * 2001-07-26 2004-06-22 Samsung Electronics Co., Ltd. Sense amplifier for memory device
KR100408420B1 (ko) * 2002-01-09 2003-12-03 삼성전자주식회사 감지증폭기의 센싱속도를 향상시킬 수 있는 반도체메모리장치의 감지증폭기 구동회로
CN1326148C (zh) * 2002-08-14 2007-07-11 力旺电子股份有限公司 利用栅极互耦驱动的负载晶体管读取数据的快速存储器
JP4351178B2 (ja) * 2005-02-25 2009-10-28 寛治 大塚 半導体記憶装置
JP2007133987A (ja) * 2005-11-11 2007-05-31 Toshiba Corp 半導体記憶装置および半導体記憶装置の駆動方法
KR100897252B1 (ko) 2006-06-30 2009-05-14 주식회사 하이닉스반도체 반도체 메모리 장치
CN101399018B (zh) * 2007-09-26 2011-09-14 中华映管股份有限公司 信号控制电路及方法、液晶显示器及其时序控制器
GB2510828B (en) * 2013-02-13 2015-06-03 Surecore Ltd Single wordline low-power SRAM cells

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039861A (en) * 1976-02-09 1977-08-02 International Business Machines Corporation Cross-coupled charge transfer sense amplifier circuits

Also Published As

Publication number Publication date
IE71667B1 (en) 1997-02-26
KR0155374B1 (ko) 1998-12-01
JPH0319198A (ja) 1991-01-28
NL8901376A (nl) 1990-12-17
IE901910L (en) 1990-11-30
CA2017607A1 (en) 1990-11-30
CN1019614B (zh) 1992-12-23
FI902648A0 (fi) 1990-05-28
CA2017607C (en) 2001-07-24
EP0400728A1 (de) 1990-12-05
HK61896A (en) 1996-04-19
DE69021273T2 (de) 1996-04-04
CN1048282A (zh) 1991-01-02
KR900019043A (ko) 1990-12-22
ES2077630T3 (es) 1995-12-01
JP2760634B2 (ja) 1998-06-04
EP0400728B1 (de) 1995-08-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN