DE69022481T2 - Halbleiteranordnung mit einem strahlungsempfindlichen Element. - Google Patents

Halbleiteranordnung mit einem strahlungsempfindlichen Element.

Info

Publication number
DE69022481T2
DE69022481T2 DE69022481T DE69022481T DE69022481T2 DE 69022481 T2 DE69022481 T2 DE 69022481T2 DE 69022481 T DE69022481 T DE 69022481T DE 69022481 T DE69022481 T DE 69022481T DE 69022481 T2 DE69022481 T2 DE 69022481T2
Authority
DE
Germany
Prior art keywords
radiation
sensitive element
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69022481T
Other languages
English (en)
Other versions
DE69022481D1 (de
Inventor
Martinus Petrus Maria Bierhoff
Mil Job Franciscus Petrus Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of DE69022481D1 publication Critical patent/DE69022481D1/de
Application granted granted Critical
Publication of DE69022481T2 publication Critical patent/DE69022481T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/13—Optical detectors therefor
    • G11B7/131—Arrangement of detectors in a multiple array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Optical Head (AREA)
  • Automatic Focus Adjustment (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Semiconductor Memories (AREA)
DE69022481T 1989-06-02 1990-05-29 Halbleiteranordnung mit einem strahlungsempfindlichen Element. Expired - Fee Related DE69022481T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8901400A NL8901400A (nl) 1989-06-02 1989-06-02 Halfgeleiderinrichting met een stralingsgevoelig element.

Publications (2)

Publication Number Publication Date
DE69022481D1 DE69022481D1 (de) 1995-10-26
DE69022481T2 true DE69022481T2 (de) 1996-05-02

Family

ID=19854766

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69022481T Expired - Fee Related DE69022481T2 (de) 1989-06-02 1990-05-29 Halbleiteranordnung mit einem strahlungsempfindlichen Element.

Country Status (7)

Country Link
US (1) US5105249A (de)
EP (1) EP0400753B1 (de)
JP (1) JP2961168B2 (de)
KR (1) KR100197772B1 (de)
CN (1) CN1021678C (de)
DE (1) DE69022481T2 (de)
NL (1) NL8901400A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4413481C2 (de) * 1994-04-19 1999-12-16 Vishay Semiconductor Gmbh Optoelektronisches Bauelement
JPH0818093A (ja) * 1994-06-30 1996-01-19 Sony Corp 半導体受光素子及び半導体装置並びにそれらの作製方法
JP3372413B2 (ja) * 1995-12-04 2003-02-04 シャープ株式会社 光ピックアップ装置及び光記録再生装置
JP3681236B2 (ja) * 1996-10-28 2005-08-10 沖電気工業株式会社 半導体装置
WO2000022677A1 (en) * 1998-10-09 2000-04-20 Polaroid Corporation Method for improving the yield of an image sensor
NL1014504C2 (nl) * 2000-02-25 2001-08-28 Stichting Tech Wetenschapp Positiegevoelige detector.
SE519103C2 (sv) * 2000-06-02 2003-01-14 Sitek Electro Optics Ab Strålningspositionsdetektor
JP3712637B2 (ja) * 2000-08-11 2005-11-02 シャープ株式会社 液晶表示装置およびその欠陥修正方法
DE102006013461B3 (de) 2006-03-23 2007-11-15 Prüftechnik Dieter Busch AG Photodetektoranordnung, Messanordnung mit einer Photodetektoranordnung und Verfahren zum Betrieb einer Messanordnung
DE102006013460B3 (de) 2006-03-23 2007-11-08 Prüftechnik Dieter Busch AG Photodetektoranordnung, Messanordnung mit einer Photodetektoranordnung und Verfahren zum Betrieb einer Messanordnung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3693029A (en) * 1970-06-26 1972-09-19 Francis J Niven Jr Electrical compensation circuit utilizing two transistors connected in parallel
US3925879A (en) * 1974-09-11 1975-12-16 Sensor Technology Inc Process of fabricating photosensitive Darlington device
US4137428A (en) * 1977-10-27 1979-01-30 Bell Telephone Laboratories, Incorporated Optically actuated bidirectional semiconductor switch
JPS5658261A (en) * 1979-10-18 1981-05-21 Toshiba Corp Semiconductor device
NL187374C (nl) * 1981-07-10 1991-09-02 Philips Nv Inrichting voor het detecteren van straling.
JPS5892263A (ja) * 1981-11-28 1983-06-01 Fuji Electric Co Ltd ダ−リントントランジスタ
JPS59193322A (ja) * 1983-04-18 1984-11-01 Canon Inc 光電変換素子
JPS6081660U (ja) * 1983-11-10 1985-06-06 富士電機株式会社 ダ−リントントランジスタ
JPS6283776A (ja) * 1985-10-07 1987-04-17 Minolta Camera Co Ltd 現像器の支持機構
NL8601719A (nl) * 1986-07-02 1988-02-01 Philips Nv Electronisch instelbare positiegevoelige stralingsdetector, focusfoutdetectiestelsel voorzien van een dergelijke stralingsdetector, en optische lees- en/of schrijfinrichting voorzien van een dergelijk focusfoutdetectiestelsel.
JPS63118782A (ja) * 1986-11-07 1988-05-23 Konica Corp 磁気ブラシ式クリ−ニング装置
GB2201543A (en) * 1987-02-25 1988-09-01 Philips Electronic Associated A photosensitive device
JPS63299583A (ja) * 1987-05-29 1988-12-07 Nec Corp 光学的記録再生装置

Also Published As

Publication number Publication date
EP0400753A1 (de) 1990-12-05
JPH0329377A (ja) 1991-02-07
KR910001516A (ko) 1991-01-31
CN1048632A (zh) 1991-01-16
DE69022481D1 (de) 1995-10-26
US5105249A (en) 1992-04-14
KR100197772B1 (ko) 1999-06-15
CN1021678C (zh) 1993-07-21
JP2961168B2 (ja) 1999-10-12
EP0400753B1 (de) 1995-09-20
NL8901400A (nl) 1991-01-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee