DE69021775T2 - Integrierte Speicherschaltung mit einem Leseverstärker. - Google Patents

Integrierte Speicherschaltung mit einem Leseverstärker.

Info

Publication number
DE69021775T2
DE69021775T2 DE69021775T DE69021775T DE69021775T2 DE 69021775 T2 DE69021775 T2 DE 69021775T2 DE 69021775 T DE69021775 T DE 69021775T DE 69021775 T DE69021775 T DE 69021775T DE 69021775 T2 DE69021775 T2 DE 69021775T2
Authority
DE
Germany
Prior art keywords
sense amplifier
memory circuit
integrated memory
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69021775T
Other languages
English (en)
Other versions
DE69021775D1 (de
Inventor
Evert Seevinck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69021775D1 publication Critical patent/DE69021775D1/de
Publication of DE69021775T2 publication Critical patent/DE69021775T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
DE69021775T 1989-05-29 1990-05-23 Integrierte Speicherschaltung mit einem Leseverstärker. Expired - Lifetime DE69021775T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8901344A NL8901344A (nl) 1989-05-29 1989-05-29 Geintegreerde geheugenschakeling met een leesversterker.

Publications (2)

Publication Number Publication Date
DE69021775D1 DE69021775D1 (de) 1995-09-28
DE69021775T2 true DE69021775T2 (de) 1996-05-15

Family

ID=19854728

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69021775T Expired - Lifetime DE69021775T2 (de) 1989-05-29 1990-05-23 Integrierte Speicherschaltung mit einem Leseverstärker.

Country Status (5)

Country Link
EP (1) EP0400724B1 (de)
JP (1) JPH0319197A (de)
KR (1) KR0185386B1 (de)
DE (1) DE69021775T2 (de)
NL (1) NL8901344A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0700049A1 (de) * 1994-08-31 1996-03-06 STMicroelectronics S.r.l. Leseschaltung für Speicherzellen
US5585747A (en) * 1994-10-11 1996-12-17 Townsend & Townsend & Crew Llp High speed low power sense amplifier
GB2328538B (en) * 1994-10-11 1999-04-14 Townsend & Townsend & Crew Llp Sense amplifier

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4069475A (en) * 1976-04-15 1978-01-17 National Semiconductor Corporation MOS Dynamic random access memory having an improved sense and restore circuit
US4123799A (en) * 1977-09-19 1978-10-31 Motorola, Inc. High speed IFGET sense amplifier/latch
JPS6032912B2 (ja) * 1979-09-13 1985-07-31 株式会社東芝 Ｃｍｏｓセンスアンプ回路

Also Published As

Publication number Publication date
DE69021775D1 (de) 1995-09-28
EP0400724A1 (de) 1990-12-05
JPH0319197A (ja) 1991-01-28
EP0400724B1 (de) 1995-08-23
KR900019042A (ko) 1990-12-22
KR0185386B1 (ko) 1999-04-15
NL8901344A (nl) 1990-12-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN