NL8901344A - Geintegreerde geheugenschakeling met een leesversterker. - Google Patents

Geintegreerde geheugenschakeling met een leesversterker. Download PDF

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Publication number
NL8901344A
NL8901344A NL8901344A NL8901344A NL8901344A NL 8901344 A NL8901344 A NL 8901344A NL 8901344 A NL8901344 A NL 8901344A NL 8901344 A NL8901344 A NL 8901344A NL 8901344 A NL8901344 A NL 8901344A
Authority
NL
Netherlands
Prior art keywords
transistors
memory circuit
transistor
selection
field effect
Prior art date
Application number
NL8901344A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8901344A priority Critical patent/NL8901344A/nl
Priority to DE69021775T priority patent/DE69021775T2/de
Priority to EP90201307A priority patent/EP0400724B1/de
Priority to KR1019900007583A priority patent/KR0185386B1/ko
Priority to JP2137289A priority patent/JPH0319197A/ja
Publication of NL8901344A publication Critical patent/NL8901344A/nl
Priority to US07/927,781 priority patent/US5241504A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
NL8901344A 1989-05-29 1989-05-29 Geintegreerde geheugenschakeling met een leesversterker. NL8901344A (nl)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL8901344A NL8901344A (nl) 1989-05-29 1989-05-29 Geintegreerde geheugenschakeling met een leesversterker.
DE69021775T DE69021775T2 (de) 1989-05-29 1990-05-23 Integrierte Speicherschaltung mit einem Leseverstärker.
EP90201307A EP0400724B1 (de) 1989-05-29 1990-05-23 Integrierte Speicherschaltung mit einem Leseverstärker
KR1019900007583A KR0185386B1 (ko) 1989-05-29 1990-05-25 센스 증폭기를 구비한 집적 메모리
JP2137289A JPH0319197A (ja) 1989-05-29 1990-05-29 集積電界効果トランジスタメモリ
US07/927,781 US5241504A (en) 1989-05-29 1992-08-10 Integrated memory comprising a sense amplifier

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8901344 1989-05-29
NL8901344A NL8901344A (nl) 1989-05-29 1989-05-29 Geintegreerde geheugenschakeling met een leesversterker.

Publications (1)

Publication Number Publication Date
NL8901344A true NL8901344A (nl) 1990-12-17

Family

ID=19854728

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8901344A NL8901344A (nl) 1989-05-29 1989-05-29 Geintegreerde geheugenschakeling met een leesversterker.

Country Status (5)

Country Link
EP (1) EP0400724B1 (de)
JP (1) JPH0319197A (de)
KR (1) KR0185386B1 (de)
DE (1) DE69021775T2 (de)
NL (1) NL8901344A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0700049A1 (de) * 1994-08-31 1996-03-06 STMicroelectronics S.r.l. Leseschaltung für Speicherzellen
US5585747A (en) * 1994-10-11 1996-12-17 Townsend & Townsend & Crew Llp High speed low power sense amplifier
GB2328538B (en) * 1994-10-11 1999-04-14 Townsend & Townsend & Crew Llp Sense amplifier

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4069475A (en) * 1976-04-15 1978-01-17 National Semiconductor Corporation MOS Dynamic random access memory having an improved sense and restore circuit
US4123799A (en) * 1977-09-19 1978-10-31 Motorola, Inc. High speed IFGET sense amplifier/latch
JPS6032912B2 (ja) * 1979-09-13 1985-07-31 株式会社東芝 Ｃｍｏｓセンスアンプ回路

Also Published As

Publication number Publication date
EP0400724A1 (de) 1990-12-05
DE69021775D1 (de) 1995-09-28
JPH0319197A (ja) 1991-01-28
KR900019042A (ko) 1990-12-22
KR0185386B1 (ko) 1999-04-15
DE69021775T2 (de) 1996-05-15
EP0400724B1 (de) 1995-08-23

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
BV The patent application has lapsed