NL8901400A - Halfgeleiderinrichting met een stralingsgevoelig element. - Google Patents
Halfgeleiderinrichting met een stralingsgevoelig element. Download PDFInfo
- Publication number
- NL8901400A NL8901400A NL8901400A NL8901400A NL8901400A NL 8901400 A NL8901400 A NL 8901400A NL 8901400 A NL8901400 A NL 8901400A NL 8901400 A NL8901400 A NL 8901400A NL 8901400 A NL8901400 A NL 8901400A
- Authority
- NL
- Netherlands
- Prior art keywords
- radiation
- sensitive
- sub
- areas
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 58
- 230000005855 radiation Effects 0.000 claims description 110
- 230000003287 optical effect Effects 0.000 claims description 21
- 230000007704 transition Effects 0.000 claims description 11
- 239000004020 conductor Substances 0.000 description 12
- 230000003071 parasitic effect Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000003321 amplification Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004883 computer application Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- -1 for example Chemical class 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/13—Optical detectors therefor
- G11B7/131—Arrangement of detectors in a multiple array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Optical Head (AREA)
- Automatic Focus Adjustment (AREA)
- Optical Recording Or Reproduction (AREA)
- Semiconductor Memories (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8901400A NL8901400A (nl) | 1989-06-02 | 1989-06-02 | Halfgeleiderinrichting met een stralingsgevoelig element. |
| DE69022481T DE69022481T2 (de) | 1989-06-02 | 1990-05-29 | Halbleiteranordnung mit einem strahlungsempfindlichen Element. |
| EP90201367A EP0400753B1 (de) | 1989-06-02 | 1990-05-29 | Halbleiteranordnung mit einem strahlungsempfindlichen Element |
| CN90103228A CN1021678C (zh) | 1989-06-02 | 1990-05-30 | 含有辐射敏感元件的半导体器件 |
| KR1019900007834A KR100197772B1 (ko) | 1989-06-02 | 1990-05-30 | 트랜지스터 및 감광 영역을 포함하는 감광 소자가 반도체 몸체부에 제공된 반도체 장치 |
| JP2141692A JP2961168B2 (ja) | 1989-06-02 | 1990-06-01 | 半導体デバイス |
| US07/744,678 US5105249A (en) | 1989-06-02 | 1991-08-09 | Radiation-sensitive semiconductor device having a transistor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8901400A NL8901400A (nl) | 1989-06-02 | 1989-06-02 | Halfgeleiderinrichting met een stralingsgevoelig element. |
| NL8901400 | 1989-06-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8901400A true NL8901400A (nl) | 1991-01-02 |
Family
ID=19854766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8901400A NL8901400A (nl) | 1989-06-02 | 1989-06-02 | Halfgeleiderinrichting met een stralingsgevoelig element. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5105249A (de) |
| EP (1) | EP0400753B1 (de) |
| JP (1) | JP2961168B2 (de) |
| KR (1) | KR100197772B1 (de) |
| CN (1) | CN1021678C (de) |
| DE (1) | DE69022481T2 (de) |
| NL (1) | NL8901400A (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4413481C2 (de) * | 1994-04-19 | 1999-12-16 | Vishay Semiconductor Gmbh | Optoelektronisches Bauelement |
| JPH0818093A (ja) * | 1994-06-30 | 1996-01-19 | Sony Corp | 半導体受光素子及び半導体装置並びにそれらの作製方法 |
| JP3372413B2 (ja) * | 1995-12-04 | 2003-02-04 | シャープ株式会社 | 光ピックアップ装置及び光記録再生装置 |
| JP3681236B2 (ja) * | 1996-10-28 | 2005-08-10 | 沖電気工業株式会社 | 半導体装置 |
| WO2000022677A1 (en) * | 1998-10-09 | 2000-04-20 | Polaroid Corporation | Method for improving the yield of an image sensor |
| NL1014504C2 (nl) * | 2000-02-25 | 2001-08-28 | Stichting Tech Wetenschapp | Positiegevoelige detector. |
| SE519103C2 (sv) * | 2000-06-02 | 2003-01-14 | Sitek Electro Optics Ab | Strålningspositionsdetektor |
| JP3712637B2 (ja) * | 2000-08-11 | 2005-11-02 | シャープ株式会社 | 液晶表示装置およびその欠陥修正方法 |
| DE102006013461B3 (de) | 2006-03-23 | 2007-11-15 | Prüftechnik Dieter Busch AG | Photodetektoranordnung, Messanordnung mit einer Photodetektoranordnung und Verfahren zum Betrieb einer Messanordnung |
| DE102006013460B3 (de) | 2006-03-23 | 2007-11-08 | Prüftechnik Dieter Busch AG | Photodetektoranordnung, Messanordnung mit einer Photodetektoranordnung und Verfahren zum Betrieb einer Messanordnung |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3693029A (en) * | 1970-06-26 | 1972-09-19 | Francis J Niven Jr | Electrical compensation circuit utilizing two transistors connected in parallel |
| US3925879A (en) * | 1974-09-11 | 1975-12-16 | Sensor Technology Inc | Process of fabricating photosensitive Darlington device |
| US4137428A (en) * | 1977-10-27 | 1979-01-30 | Bell Telephone Laboratories, Incorporated | Optically actuated bidirectional semiconductor switch |
| JPS5658261A (en) * | 1979-10-18 | 1981-05-21 | Toshiba Corp | Semiconductor device |
| NL187374C (nl) * | 1981-07-10 | 1991-09-02 | Philips Nv | Inrichting voor het detecteren van straling. |
| JPS5892263A (ja) * | 1981-11-28 | 1983-06-01 | Fuji Electric Co Ltd | ダ−リントントランジスタ |
| JPS59193322A (ja) * | 1983-04-18 | 1984-11-01 | Canon Inc | 光電変換素子 |
| JPS6081660U (ja) * | 1983-11-10 | 1985-06-06 | 富士電機株式会社 | ダ−リントントランジスタ |
| JPS6283776A (ja) * | 1985-10-07 | 1987-04-17 | Minolta Camera Co Ltd | 現像器の支持機構 |
| NL8601719A (nl) * | 1986-07-02 | 1988-02-01 | Philips Nv | Electronisch instelbare positiegevoelige stralingsdetector, focusfoutdetectiestelsel voorzien van een dergelijke stralingsdetector, en optische lees- en/of schrijfinrichting voorzien van een dergelijk focusfoutdetectiestelsel. |
| JPS63118782A (ja) * | 1986-11-07 | 1988-05-23 | Konica Corp | 磁気ブラシ式クリ−ニング装置 |
| GB2201543A (en) * | 1987-02-25 | 1988-09-01 | Philips Electronic Associated | A photosensitive device |
| JPS63299583A (ja) * | 1987-05-29 | 1988-12-07 | Nec Corp | 光学的記録再生装置 |
-
1989
- 1989-06-02 NL NL8901400A patent/NL8901400A/nl not_active Application Discontinuation
-
1990
- 1990-05-29 DE DE69022481T patent/DE69022481T2/de not_active Expired - Fee Related
- 1990-05-29 EP EP90201367A patent/EP0400753B1/de not_active Expired - Lifetime
- 1990-05-30 CN CN90103228A patent/CN1021678C/zh not_active Expired - Fee Related
- 1990-05-30 KR KR1019900007834A patent/KR100197772B1/ko not_active IP Right Cessation
- 1990-06-01 JP JP2141692A patent/JP2961168B2/ja not_active Expired - Fee Related
-
1991
- 1991-08-09 US US07/744,678 patent/US5105249A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0400753A1 (de) | 1990-12-05 |
| JPH0329377A (ja) | 1991-02-07 |
| KR910001516A (ko) | 1991-01-31 |
| CN1048632A (zh) | 1991-01-16 |
| DE69022481D1 (de) | 1995-10-26 |
| US5105249A (en) | 1992-04-14 |
| KR100197772B1 (ko) | 1999-06-15 |
| DE69022481T2 (de) | 1996-05-02 |
| CN1021678C (zh) | 1993-07-21 |
| JP2961168B2 (ja) | 1999-10-12 |
| EP0400753B1 (de) | 1995-09-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |