DE69017396T2 - Lichtemittierende Diode mit einer elektrisch leitenden Fensterschicht. - Google Patents

Lichtemittierende Diode mit einer elektrisch leitenden Fensterschicht.

Info

Publication number
DE69017396T2
DE69017396T2 DE69017396T DE69017396T DE69017396T2 DE 69017396 T2 DE69017396 T2 DE 69017396T2 DE 69017396 T DE69017396 T DE 69017396T DE 69017396 T DE69017396 T DE 69017396T DE 69017396 T2 DE69017396 T2 DE 69017396T2
Authority
DE
Germany
Prior art keywords
light
emitting diode
electrically conductive
window layer
conductive window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69017396T
Other languages
English (en)
Other versions
DE69017396D1 (de
Inventor
Robert M Fletcher
Chihping Kuo
Timothy Osentowski
Virginia M Robbins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds LLC
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23797989&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69017396(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of DE69017396D1 publication Critical patent/DE69017396D1/de
Application granted granted Critical
Publication of DE69017396T2 publication Critical patent/DE69017396T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE69017396T 1989-12-18 1990-11-23 Lichtemittierende Diode mit einer elektrisch leitenden Fensterschicht. Expired - Lifetime DE69017396T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/452,800 US5008718A (en) 1989-12-18 1989-12-18 Light-emitting diode with an electrically conductive window

Publications (2)

Publication Number Publication Date
DE69017396D1 DE69017396D1 (de) 1995-04-06
DE69017396T2 true DE69017396T2 (de) 1995-06-29

Family

ID=23797989

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69017396T Expired - Lifetime DE69017396T2 (de) 1989-12-18 1990-11-23 Lichtemittierende Diode mit einer elektrisch leitenden Fensterschicht.

Country Status (4)

Country Link
US (1) US5008718A (de)
EP (1) EP0434233B1 (de)
DE (1) DE69017396T2 (de)
HK (1) HK169495A (de)

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* Cited by examiner, † Cited by third party
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US5103271A (en) * 1989-09-28 1992-04-07 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method of fabricating the same
US5235194A (en) * 1989-09-28 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor light-emitting device with InGaAlP
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JP3230638B2 (ja) * 1993-02-10 2001-11-19 シャープ株式会社 発光ダイオードの製造方法
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US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
JP2773597B2 (ja) * 1993-03-25 1998-07-09 信越半導体株式会社 半導体発光装置及びその製造方法
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US5800630A (en) * 1993-04-08 1998-09-01 University Of Houston Tandem solar cell with indium phosphide tunnel junction
JP2900754B2 (ja) * 1993-05-31 1999-06-02 信越半導体株式会社 ＡｌＧａＩｎＰ系発光装置
CN1034534C (zh) * 1993-12-07 1997-04-09 黄国欣 窗层结构的发光二极管
GB2284705B (en) * 1993-12-08 1997-06-25 Huang Kuo Hsin Efficient light emitting diodes with modified window layers
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DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
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DE19537543A1 (de) * 1995-10-09 1997-04-10 Telefunken Microelectron Lichtemittierende Diode
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JP3635757B2 (ja) * 1995-12-28 2005-04-06 昭和電工株式会社 ＡｌＧａＩｎＰ発光ダイオード
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JP3807638B2 (ja) * 1997-01-29 2006-08-09 シャープ株式会社 半導体発光素子及びその製造方法
JP3332785B2 (ja) * 1997-02-28 2002-10-07 シャープ株式会社 半導体発光素子およびその製造方法
TW497759U (en) * 1997-03-13 2002-08-01 Rohm Co Ltd Semiconductor light emitting device
US6057562A (en) * 1997-04-18 2000-05-02 Epistar Corp. High efficiency light emitting diode with distributed Bragg reflector
US5917201A (en) * 1997-08-07 1999-06-29 Epistar Co. Light emitting diode with asymmetrical energy band structure
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NL1009453C2 (nl) * 1998-06-19 2001-03-23 Lite On Electronics Voor licht transparante vensterlaag voor een licht-emitterende diode.
US20010020703A1 (en) 1998-07-24 2001-09-13 Nathan F. Gardner Algainp light emitting devices with thin active layers
JP2000068554A (ja) * 1998-08-21 2000-03-03 Sharp Corp 半導体発光素子
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TW437104B (en) * 1999-05-25 2001-05-28 Wang Tien Yang Semiconductor light-emitting device and method for manufacturing the same
US6133589A (en) 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
DE19943406C2 (de) 1999-09-10 2001-07-19 Osram Opto Semiconductors Gmbh Lichtemissionsdiode mit Oberflächenstrukturierung
DE19947030A1 (de) 1999-09-30 2001-04-19 Osram Opto Semiconductors Gmbh Oberflächenstrukturierte Lichtemissionsdiode mit verbesserter Stromeinkopplung
US6287882B1 (en) 1999-10-04 2001-09-11 Visual Photonics Epitaxy Co., Ltd. Light emitting diode with a metal-coated reflective permanent substrate and the method for manufacturing the same
DE10008583A1 (de) 2000-02-24 2001-09-13 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optisch transparenten Substrates und Verfahren zum Herstellen eines lichtemittierenden Halbleiterchips
DE10017336C2 (de) * 2000-04-07 2002-05-16 Vishay Semiconductor Gmbh verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern
DE10017337C2 (de) * 2000-04-07 2002-04-04 Vishay Semiconductor Gmbh Verfahren zum Herstellen lichtaussendender Halbleiterbauelemente
US7547921B2 (en) * 2000-08-08 2009-06-16 Osram Opto Semiconductors Gmbh Semiconductor chip for optoelectronics
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
DE10038671A1 (de) 2000-08-08 2002-02-28 Osram Opto Semiconductors Gmbh Halbleiterchip für die Optoelektronik
DE10039945B4 (de) * 2000-08-16 2006-07-13 Vishay Semiconductor Gmbh Verfahren zum Herstellen einer lichtemittierenden Halbleiteranordnung aus GaAIAs mit Doppelheterostruktur und entsprechende Halbleiteranordnung
US6654172B2 (en) 2000-08-31 2003-11-25 Truck-Lite Co., Inc. Combined stop/turn/tail/clearance lamp using light emitting diode technology
US6525335B1 (en) * 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
US6468824B2 (en) * 2001-03-22 2002-10-22 Uni Light Technology Inc. Method for forming a semiconductor device having a metallic substrate
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
JP2003282937A (ja) * 2002-01-15 2003-10-03 Keyence Corp 光電センサ装置
US6792026B2 (en) * 2002-03-26 2004-09-14 Joseph Reid Henrichs Folded cavity solid-state laser
US6819701B2 (en) * 2002-03-26 2004-11-16 Joseph Reid Henrichs Super-luminescent folded cavity light emitting diode
JP2004153241A (ja) * 2002-10-11 2004-05-27 Sharp Corp 半導体発光素子及びその製造方法
US6929966B2 (en) * 2002-11-29 2005-08-16 Osram Opto Semiconductors Gmbh Method for producing a light-emitting semiconductor component
DE10308322B4 (de) * 2003-01-31 2014-11-06 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektrischen Kontaktbereiches auf einer Halbleiterschicht und Bauelement mit derartigem Kontaktbereich
JP2004235649A (ja) * 2003-01-31 2004-08-19 Osram Opto Semiconductors Gmbh 電気コンタクト領域を備えたモジュールの製造方法および半導体層列および活性ゾーンを有するモジュール
WO2004070851A1 (en) * 2003-02-10 2004-08-19 Showa Denko K.K. Light-emitting diode device and production method thereof
US7528417B2 (en) * 2003-02-10 2009-05-05 Showa Denko K.K. Light-emitting diode device and production method thereof
JP4278437B2 (ja) * 2003-05-27 2009-06-17 シャープ株式会社 発光ダイオード及びその製造方法
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Also Published As

Publication number Publication date
HK169495A (en) 1995-11-10
DE69017396D1 (de) 1995-04-06
US5008718A (en) 1991-04-16
EP0434233B1 (de) 1995-03-01
EP0434233A1 (de) 1991-06-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA

8327 Change in the person/name/address of the patent owner

Owner name: LUMILEDS LIGHTING, U.S., LLC, SAN JOSE, CALIF., US

8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY,LLC, SAN JOS, US