DE69004581D1 - Plastikumhüllte Hybrid-Halbleiteranordnung. - Google Patents

Plastikumhüllte Hybrid-Halbleiteranordnung.

Info

Publication number
DE69004581D1
DE69004581D1 DE90100516T DE69004581T DE69004581D1 DE 69004581 D1 DE69004581 D1 DE 69004581D1 DE 90100516 T DE90100516 T DE 90100516T DE 69004581 T DE69004581 T DE 69004581T DE 69004581 D1 DE69004581 D1 DE 69004581D1
Authority
DE
Germany
Prior art keywords
plastic
semiconductor device
hybrid semiconductor
coated hybrid
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90100516T
Other languages
English (en)
Other versions
DE69004581T2 (de
Inventor
Shigeki C O Intellectual Sako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69004581D1 publication Critical patent/DE69004581D1/de
Application granted granted Critical
Publication of DE69004581T2 publication Critical patent/DE69004581T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
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    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49575Assemblies of semiconductor devices on lead frames
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Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
DE90100516T 1989-01-11 1990-01-11 Plastikumhüllte Hybrid-Halbleiteranordnung. Expired - Fee Related DE69004581T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP894051A JPH02184054A (ja) 1989-01-11 1989-01-11 ハイブリッド型樹脂封止半導体装置

Publications (2)

Publication Number Publication Date
DE69004581D1 true DE69004581D1 (de) 1993-12-23
DE69004581T2 DE69004581T2 (de) 1994-04-28

Family

ID=11574103

Family Applications (1)

Application Number Title Priority Date Filing Date
DE90100516T Expired - Fee Related DE69004581T2 (de) 1989-01-11 1990-01-11 Plastikumhüllte Hybrid-Halbleiteranordnung.

Country Status (5)

Country Link
US (1) US4984065A (de)
EP (1) EP0378209B1 (de)
JP (1) JPH02184054A (de)
KR (1) KR930004244B1 (de)
DE (1) DE69004581T2 (de)

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JPH02201948A (ja) * 1989-01-30 1990-08-10 Toshiba Corp 半導体装置パッケージ
JPH0724270B2 (ja) * 1989-12-14 1995-03-15 株式会社東芝 半導体装置及びその製造方法
JP2528991B2 (ja) * 1990-02-28 1996-08-28 株式会社日立製作所 樹脂封止型半導体装置及びリ―ドフレ―ム
US5049973A (en) * 1990-06-26 1991-09-17 Harris Semiconductor Patents, Inc. Heat sink and multi mount pad lead frame package and method for electrically isolating semiconductor die(s)
JP3074736B2 (ja) * 1990-12-28 2000-08-07 富士電機株式会社 半導体装置
AU657774B2 (en) * 1991-08-08 1995-03-23 Sumitomo Electric Industries, Ltd. Semiconductor chip module and method for manufacturing the same
JP2960283B2 (ja) * 1993-06-14 1999-10-06 株式会社東芝 樹脂封止型半導体装置の製造方法と、この製造方法に用いられる複数の半導体素子を載置するためのリードフレームと、この製造方法によって製造される樹脂封止型半導体装置
JP2938344B2 (ja) * 1994-05-15 1999-08-23 株式会社東芝 半導体装置
US5633785A (en) * 1994-12-30 1997-05-27 University Of Southern California Integrated circuit component package with integral passive component
US5886414A (en) * 1996-09-20 1999-03-23 Integrated Device Technology, Inc. Removal of extended bond pads using intermetallics
EP0903780A3 (de) * 1997-09-19 1999-08-25 Texas Instruments Incorporated Verfahren und Vorrichtung für drahtgebondete Verpackung für integrierte Schaltung
US6169331B1 (en) 1998-08-28 2001-01-02 Micron Technology, Inc. Apparatus for electrically coupling bond pads of a microelectronic device
SG109436A1 (en) * 2000-12-07 2005-03-30 Fung Leng Chen Leaded mcm package and method therefor
SG109435A1 (en) * 2000-12-07 2005-03-30 Chuen Khiang Wang Leaded mcm package and method therefor
JP5132070B2 (ja) * 2006-03-31 2013-01-30 オンセミコンダクター・トレーディング・リミテッド 回路装置およびその製造方法
JP5062283B2 (ja) * 2009-04-30 2012-10-31 日亜化学工業株式会社 半導体装置及びその製造方法
US20110042793A1 (en) * 2009-08-21 2011-02-24 Freescale Semiconductor, Inc Lead frame assembly for a semiconductor package
US20120286409A1 (en) * 2011-05-10 2012-11-15 Jitesh Shah Utilizing a jumper chip in packages with long bonding wires

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US4200880A (en) * 1978-03-28 1980-04-29 Microwave Semiconductor Corp. Microwave transistor with distributed output shunt tuning
JPS55107252A (en) * 1979-02-09 1980-08-16 Nec Corp Manufacture of semiconductor device
JPS58213456A (ja) * 1982-06-04 1983-12-12 Nec Corp 半導体装置
NL8202470A (nl) * 1982-06-18 1984-01-16 Philips Nv Hoogfrequentschakelinrichting en halfgeleiderinrichting voor toepassing in een dergelijke inrichting.
JPS61105851A (ja) * 1984-10-30 1986-05-23 Toshiba Corp ワイヤボンデイング方法
JPS61189652A (ja) * 1985-02-19 1986-08-23 Toshiba Corp 半導体装置
JPS6276661A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 樹脂封止型半導体装置
JPS62190734A (ja) * 1986-02-17 1987-08-20 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH0666354B2 (ja) * 1986-07-29 1994-08-24 日本電気株式会社 半導体装置
JPS63114152A (ja) * 1986-10-30 1988-05-19 Nec Corp 混成集積回路
JPS63141328A (ja) * 1986-12-03 1988-06-13 Mitsubishi Electric Corp 高周波高出力トランジスタ
JPS63250164A (ja) * 1987-04-07 1988-10-18 Denki Kagaku Kogyo Kk ハイパワ−用混成集積回路基板とその集積回路

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Publication number Publication date
EP0378209A3 (de) 1991-04-10
JPH02184054A (ja) 1990-07-18
EP0378209B1 (de) 1993-11-18
KR930004244B1 (ko) 1993-05-22
DE69004581T2 (de) 1994-04-28
US4984065A (en) 1991-01-08
EP0378209A2 (de) 1990-07-18

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