JPH07105477B2
(ja)
*
|
1988-05-28 |
1995-11-13 |
富士通株式会社 |
半導体装置及びその製造方法
|
JPH0831569B2
(ja)
*
|
1990-01-20 |
1996-03-27 |
株式会社東芝 |
半導体記憶装置およびその製造方法
|
FR2658952A1
(fr)
*
|
1990-02-27 |
1991-08-30 |
Thomson Csf |
Procede de realisation de memoires haute densite.
|
US5252845A
(en)
*
|
1990-04-02 |
1993-10-12 |
Electronics And Telecommunications Research Institute |
Trench DRAM cell with vertical transistor
|
JPH0834304B2
(ja)
*
|
1990-09-20 |
1996-03-29 |
富士通株式会社 |
半導体装置およびその製造方法
|
KR920010963A
(ko)
*
|
1990-11-23 |
1992-06-27 |
오가 노리오 |
Soi형 종채널 fet 및 그 제조방법
|
US5466961A
(en)
*
|
1991-04-23 |
1995-11-14 |
Canon Kabushiki Kaisha |
Semiconductor device and method of manufacturing the same
|
JPH0828476B2
(ja)
*
|
1991-06-07 |
1996-03-21 |
富士通株式会社 |
半導体装置及びその製造方法
|
EP0535541B1
(de)
*
|
1991-10-02 |
1996-03-13 |
Siemens Aktiengesellschaft |
Verfahren zur Herstellung einer Grabenstruktur in einem Substrat
|
US5208172A
(en)
*
|
1992-03-02 |
1993-05-04 |
Motorola, Inc. |
Method for forming a raised vertical transistor
|
EP0562352B1
(de)
*
|
1992-03-26 |
1998-02-18 |
Texas Instruments Incorporated |
Hochspannungstruktur mit oxydisolierter Source und RESURF-Drift-Zone in Massivsilizium
|
JP2904635B2
(ja)
*
|
1992-03-30 |
1999-06-14 |
株式会社東芝 |
半導体装置およびその製造方法
|
US5229312A
(en)
*
|
1992-04-13 |
1993-07-20 |
North American Philips Corp. |
Nonvolatile trench memory device and self-aligned method for making such a device
|
JPH0677402A
(ja)
*
|
1992-07-02 |
1994-03-18 |
Natl Semiconductor Corp <Ns> |
半導体デバイス用誘電体構造及びその製造方法
|
KR100244402B1
(ko)
*
|
1992-11-19 |
2000-03-02 |
김영환 |
반도체소자의 트렌치 아이솔레이션 제조방법
|
JP3311070B2
(ja)
*
|
1993-03-15 |
2002-08-05 |
株式会社東芝 |
半導体装置
|
JPH07130871A
(ja)
*
|
1993-06-28 |
1995-05-19 |
Toshiba Corp |
半導体記憶装置
|
KR0141218B1
(ko)
*
|
1993-11-24 |
1998-07-15 |
윤종용 |
고집적 반도체장치의 제조방법
|
US7118988B2
(en)
|
1994-08-15 |
2006-10-10 |
Buerger Jr Walter Richard |
Vertically wired integrated circuit and method of fabrication
|
US5529944A
(en)
*
|
1995-02-02 |
1996-06-25 |
International Business Machines Corporation |
Method of making cross point four square folded bitline trench DRAM cell
|
KR0179823B1
(ko)
*
|
1995-05-13 |
1999-04-15 |
문정환 |
반도체장치의 제조방법
|
US6831322B2
(en)
*
|
1995-06-05 |
2004-12-14 |
Fujitsu Limited |
Semiconductor memory device and method for fabricating the same
|
US6696351B1
(en)
*
|
1995-08-15 |
2004-02-24 |
Sony Corporation |
Semiconductor device having a selectively deposited conductive layer
|
DE19611045C1
(de)
*
|
1996-03-20 |
1997-05-22 |
Siemens Ag |
Durch Feldeffekt steuerbares Halbleiterbauelement
|
US5721448A
(en)
*
|
1996-07-30 |
1998-02-24 |
International Business Machines Corporation |
Integrated circuit chip having isolation trenches composed of a dielectric layer with oxidation catalyst material
|
US5757059A
(en)
*
|
1996-07-30 |
1998-05-26 |
International Business Machines Corporation |
Insulated gate field effect transistor
|
US5990509A
(en)
*
|
1997-01-22 |
1999-11-23 |
International Business Machines Corporation |
2F-square memory cell for gigabit memory applications
|
US6337497B1
(en)
|
1997-05-16 |
2002-01-08 |
International Business Machines Corporation |
Common source transistor capacitor stack
|
US6191470B1
(en)
|
1997-07-08 |
2001-02-20 |
Micron Technology, Inc. |
Semiconductor-on-insulator memory cell with buried word and body lines
|
US6072209A
(en)
|
1997-07-08 |
2000-06-06 |
Micro Technology, Inc. |
Four F2 folded bit line DRAM cell structure having buried bit and word lines
|
US5909618A
(en)
*
|
1997-07-08 |
1999-06-01 |
Micron Technology, Inc. |
Method of making memory cell with vertical transistor and buried word and body lines
|
US5973356A
(en)
*
|
1997-07-08 |
1999-10-26 |
Micron Technology, Inc. |
Ultra high density flash memory
|
US5936274A
(en)
*
|
1997-07-08 |
1999-08-10 |
Micron Technology, Inc. |
High density flash memory
|
US6150687A
(en)
|
1997-07-08 |
2000-11-21 |
Micron Technology, Inc. |
Memory cell having a vertical transistor with buried source/drain and dual gates
|
US5907170A
(en)
*
|
1997-10-06 |
1999-05-25 |
Micron Technology, Inc. |
Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
|
US5914511A
(en)
*
|
1997-10-06 |
1999-06-22 |
Micron Technology, Inc. |
Circuit and method for a folded bit line memory using trench plate capacitor cells with body bias contacts
|
US6066869A
(en)
|
1997-10-06 |
2000-05-23 |
Micron Technology, Inc. |
Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor
|
US6528837B2
(en)
|
1997-10-06 |
2003-03-04 |
Micron Technology, Inc. |
Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
|
US6025225A
(en)
*
|
1998-01-22 |
2000-02-15 |
Micron Technology, Inc. |
Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same
|
US6304483B1
(en)
|
1998-02-24 |
2001-10-16 |
Micron Technology, Inc. |
Circuits and methods for a static random access memory using vertical transistors
|
US5963469A
(en)
*
|
1998-02-24 |
1999-10-05 |
Micron Technology, Inc. |
Vertical bipolar read access for low voltage memory cell
|
US6242775B1
(en)
|
1998-02-24 |
2001-06-05 |
Micron Technology, Inc. |
Circuits and methods using vertical complementary transistors
|
US6246083B1
(en)
|
1998-02-24 |
2001-06-12 |
Micron Technology, Inc. |
Vertical gain cell and array for a dynamic random access memory
|
US6124729A
(en)
|
1998-02-27 |
2000-09-26 |
Micron Technology, Inc. |
Field programmable logic arrays with vertical transistors
|
US5991225A
(en)
|
1998-02-27 |
1999-11-23 |
Micron Technology, Inc. |
Programmable memory address decode array with vertical transistors
|
US6043527A
(en)
|
1998-04-14 |
2000-03-28 |
Micron Technology, Inc. |
Circuits and methods for a memory cell with a trench plate trench capacitor and a vertical bipolar read device
|
US6137128A
(en)
*
|
1998-06-09 |
2000-10-24 |
International Business Machines Corporation |
Self-isolated and self-aligned 4F-square vertical fet-trench dram cells
|
US6208164B1
(en)
|
1998-08-04 |
2001-03-27 |
Micron Technology, Inc. |
Programmable logic array with vertical transistors
|
US6134175A
(en)
*
|
1998-08-04 |
2000-10-17 |
Micron Technology, Inc. |
Memory address decode array with vertical transistors
|
DE19840032C1
(de)
|
1998-09-02 |
1999-11-18 |
Siemens Ag |
Halbleiterbauelement und Herstellungsverfahren dazu
|
EP1118116B1
(de)
|
1998-09-30 |
2007-01-03 |
Infineon Technologies AG |
Substrat mit einer vertiefung, das für eine integrierte schaltungsanordnung geeignet ist, und verfahren zu dessen herstellung
|
DE19929210C1
(de)
*
|
1999-06-25 |
2000-10-26 |
Infineon Technologies Ag |
SOI-Substrat und Verfahren zu dessen Herstellung
|
US6153902A
(en)
|
1999-08-16 |
2000-11-28 |
International Business Machines Corporation |
Vertical DRAM cell with wordline self-aligned to storage trench
|
US6794242B1
(en)
|
2000-09-29 |
2004-09-21 |
Infineon Technologies Ag |
Extendible process for improved top oxide layer for DRAM array and the gate interconnects while providing self-aligned gate contacts
|
US6559491B2
(en)
*
|
2001-02-09 |
2003-05-06 |
Micron Technology, Inc. |
Folded bit line DRAM with ultra thin body transistors
|
US6496034B2
(en)
|
2001-02-09 |
2002-12-17 |
Micron Technology, Inc. |
Programmable logic arrays with ultra thin body transistors
|
US6531727B2
(en)
|
2001-02-09 |
2003-03-11 |
Micron Technology, Inc. |
Open bit line DRAM with ultra thin body transistors
|
US6566682B2
(en)
|
2001-02-09 |
2003-05-20 |
Micron Technology, Inc. |
Programmable memory address and decode circuits with ultra thin vertical body transistors
|
US6424001B1
(en)
*
|
2001-02-09 |
2002-07-23 |
Micron Technology, Inc. |
Flash memory with ultra thin vertical body transistors
|
TWI230392B
(en)
|
2001-06-18 |
2005-04-01 |
Innovative Silicon Sa |
Semiconductor device
|
US7786533B2
(en)
*
|
2001-09-07 |
2010-08-31 |
Power Integrations, Inc. |
High-voltage vertical transistor with edge termination structure
|
US6819089B2
(en)
|
2001-11-09 |
2004-11-16 |
Infineon Technologies Ag |
Power factor correction circuit with high-voltage semiconductor component
|
US6828609B2
(en)
*
|
2001-11-09 |
2004-12-07 |
Infineon Technologies Ag |
High-voltage semiconductor component
|
US7160577B2
(en)
|
2002-05-02 |
2007-01-09 |
Micron Technology, Inc. |
Methods for atomic-layer deposition of aluminum oxides in integrated circuits
|
JP2004311858A
(ja)
*
|
2003-04-10 |
2004-11-04 |
Nec Electronics Corp |
半導体集積回路装置
|
US20040228168A1
(en)
|
2003-05-13 |
2004-11-18 |
Richard Ferrant |
Semiconductor memory device and method of operating same
|
US7638841B2
(en)
|
2003-05-20 |
2009-12-29 |
Fairchild Semiconductor Corporation |
Power semiconductor devices and methods of manufacture
|
US7335934B2
(en)
|
2003-07-22 |
2008-02-26 |
Innovative Silicon S.A. |
Integrated circuit device, and method of fabricating same
|
US7473596B2
(en)
|
2003-12-19 |
2009-01-06 |
Micron Technology, Inc. |
Methods of forming memory cells
|
EP1711966B1
(de)
*
|
2004-01-22 |
2012-02-22 |
International Business Machines Corporation |
Vertikal fin-fet-mos-vorrichtungen
|
US7393749B2
(en)
|
2005-06-10 |
2008-07-01 |
Fairchild Semiconductor Corporation |
Charge balance field effect transistor
|
US7679118B2
(en)
*
|
2005-06-13 |
2010-03-16 |
Micron Technology, Inc. |
Vertical transistor, memory cell, device, system and method of forming same
|
US7927948B2
(en)
|
2005-07-20 |
2011-04-19 |
Micron Technology, Inc. |
Devices with nanocrystals and methods of formation
|
US7606066B2
(en)
|
2005-09-07 |
2009-10-20 |
Innovative Silicon Isi Sa |
Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
|
US7683430B2
(en)
|
2005-12-19 |
2010-03-23 |
Innovative Silicon Isi Sa |
Electrically floating body memory cell and array, and method of operating or controlling same
|
US7492632B2
(en)
|
2006-04-07 |
2009-02-17 |
Innovative Silicon Isi Sa |
Memory array having a programmable word length, and method of operating same
|
WO2007128738A1
(en)
|
2006-05-02 |
2007-11-15 |
Innovative Silicon Sa |
Semiconductor memory cell and array using punch-through to program and read same
|
US8069377B2
(en)
|
2006-06-26 |
2011-11-29 |
Micron Technology, Inc. |
Integrated circuit having memory array including ECC and column redundancy and method of operating the same
|
US7542340B2
(en)
|
2006-07-11 |
2009-06-02 |
Innovative Silicon Isi Sa |
Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
|
DE102006051490B4
(de)
*
|
2006-10-31 |
2010-07-08 |
Advanced Micro Devices, Inc., Sunnyvale |
Technik zur Herstellung einer Passivierungsschicht ohne ein Abschlussmetall
|
WO2008090475A2
(en)
|
2007-01-26 |
2008-07-31 |
Innovative Silicon S.A. |
Floating-body dram transistor comprising source/drain regions separated from the gated body region
|
US7691734B2
(en)
*
|
2007-03-01 |
2010-04-06 |
International Business Machines Corporation |
Deep trench based far subcollector reachthrough
|
WO2009031052A2
(en)
|
2007-03-29 |
2009-03-12 |
Innovative Silicon S.A. |
Zero-capacitor (floating body) random access memory circuits with polycide word lines and manufacturing methods therefor
|
US8064274B2
(en)
|
2007-05-30 |
2011-11-22 |
Micron Technology, Inc. |
Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
|
US8085594B2
(en)
|
2007-06-01 |
2011-12-27 |
Micron Technology, Inc. |
Reading technique for memory cell with electrically floating body transistor
|
US8194487B2
(en)
|
2007-09-17 |
2012-06-05 |
Micron Technology, Inc. |
Refreshing data of memory cells with electrically floating body transistors
|
US8536628B2
(en)
|
2007-11-29 |
2013-09-17 |
Micron Technology, Inc. |
Integrated circuit having memory cell array including barriers, and method of manufacturing same
|
US8349662B2
(en)
|
2007-12-11 |
2013-01-08 |
Micron Technology, Inc. |
Integrated circuit having memory cell array, and method of manufacturing same
|
KR100948093B1
(ko)
*
|
2007-12-21 |
2010-03-16 |
주식회사 하이닉스반도체 |
반도체 소자 및 그 제조 방법
|
US8773933B2
(en)
|
2012-03-16 |
2014-07-08 |
Micron Technology, Inc. |
Techniques for accessing memory cells
|
US8014195B2
(en)
|
2008-02-06 |
2011-09-06 |
Micron Technology, Inc. |
Single transistor memory cell
|
US8189376B2
(en)
|
2008-02-08 |
2012-05-29 |
Micron Technology, Inc. |
Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
|
KR100971420B1
(ko)
*
|
2008-04-04 |
2010-07-21 |
주식회사 하이닉스반도체 |
반도체 소자 제조 방법
|
US7957206B2
(en)
|
2008-04-04 |
2011-06-07 |
Micron Technology, Inc. |
Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
|
US7947543B2
(en)
|
2008-09-25 |
2011-05-24 |
Micron Technology, Inc. |
Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
|
US7933140B2
(en)
|
2008-10-02 |
2011-04-26 |
Micron Technology, Inc. |
Techniques for reducing a voltage swing
|
US7924630B2
(en)
|
2008-10-15 |
2011-04-12 |
Micron Technology, Inc. |
Techniques for simultaneously driving a plurality of source lines
|
US8223574B2
(en)
|
2008-11-05 |
2012-07-17 |
Micron Technology, Inc. |
Techniques for block refreshing a semiconductor memory device
|
US8213226B2
(en)
|
2008-12-05 |
2012-07-03 |
Micron Technology, Inc. |
Vertical transistor memory cell and array
|
US8319294B2
(en)
|
2009-02-18 |
2012-11-27 |
Micron Technology, Inc. |
Techniques for providing a source line plane
|
WO2010102106A2
(en)
|
2009-03-04 |
2010-09-10 |
Innovative Silicon Isi Sa |
Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
|
KR20120006516A
(ko)
|
2009-03-31 |
2012-01-18 |
마이크론 테크놀로지, 인크. |
반도체 메모리 디바이스를 제공하기 위한 기술들
|
US8139418B2
(en)
|
2009-04-27 |
2012-03-20 |
Micron Technology, Inc. |
Techniques for controlling a direct injection semiconductor memory device
|
US8508994B2
(en)
|
2009-04-30 |
2013-08-13 |
Micron Technology, Inc. |
Semiconductor device with floating gate and electrically floating body
|
US8498157B2
(en)
|
2009-05-22 |
2013-07-30 |
Micron Technology, Inc. |
Techniques for providing a direct injection semiconductor memory device
|
JP5515429B2
(ja)
*
|
2009-06-01 |
2014-06-11 |
富士通セミコンダクター株式会社 |
半導体装置の製造方法
|
US8537610B2
(en)
|
2009-07-10 |
2013-09-17 |
Micron Technology, Inc. |
Techniques for providing a semiconductor memory device
|
US9076543B2
(en)
|
2009-07-27 |
2015-07-07 |
Micron Technology, Inc. |
Techniques for providing a direct injection semiconductor memory device
|
US8199595B2
(en)
|
2009-09-04 |
2012-06-12 |
Micron Technology, Inc. |
Techniques for sensing a semiconductor memory device
|
US8174881B2
(en)
|
2009-11-24 |
2012-05-08 |
Micron Technology, Inc. |
Techniques for reducing disturbance in a semiconductor device
|
US8310893B2
(en)
|
2009-12-16 |
2012-11-13 |
Micron Technology, Inc. |
Techniques for reducing impact of array disturbs in a semiconductor memory device
|
US8416636B2
(en)
|
2010-02-12 |
2013-04-09 |
Micron Technology, Inc. |
Techniques for controlling a semiconductor memory device
|
US8411513B2
(en)
|
2010-03-04 |
2013-04-02 |
Micron Technology, Inc. |
Techniques for providing a semiconductor memory device having hierarchical bit lines
|
US8576631B2
(en)
|
2010-03-04 |
2013-11-05 |
Micron Technology, Inc. |
Techniques for sensing a semiconductor memory device
|
US8369177B2
(en)
|
2010-03-05 |
2013-02-05 |
Micron Technology, Inc. |
Techniques for reading from and/or writing to a semiconductor memory device
|
WO2011115893A2
(en)
|
2010-03-15 |
2011-09-22 |
Micron Technology, Inc. |
Techniques for providing a semiconductor memory device
|
US8411524B2
(en)
|
2010-05-06 |
2013-04-02 |
Micron Technology, Inc. |
Techniques for refreshing a semiconductor memory device
|
US8432000B2
(en)
|
2010-06-18 |
2013-04-30 |
Fairchild Semiconductor Corporation |
Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
|
JP5449094B2
(ja)
|
2010-09-07 |
2014-03-19 |
株式会社東芝 |
半導体装置
|
US8531878B2
(en)
|
2011-05-17 |
2013-09-10 |
Micron Technology, Inc. |
Techniques for providing a semiconductor memory device
|
US9559216B2
(en)
|
2011-06-06 |
2017-01-31 |
Micron Technology, Inc. |
Semiconductor memory device and method for biasing same
|
KR20130042779A
(ko)
*
|
2011-10-19 |
2013-04-29 |
삼성전자주식회사 |
수직형 채널 트랜지스터를 포함하는 반도체 소자 및 그 제조 방법
|
US8704206B2
(en)
|
2011-11-21 |
2014-04-22 |
Avalanche Technology Inc. |
Memory device including transistor array with shared plate channel and method for making the same
|
KR20150020847A
(ko)
*
|
2013-08-19 |
2015-02-27 |
에스케이하이닉스 주식회사 |
3차원 반도체 장치, 이를 구비하는 저항 변화 메모리 장치, 및 그 제조방법
|
JP6916525B2
(ja)
*
|
2018-02-06 |
2021-08-11 |
株式会社ブイ・テクノロジー |
Ledディスプレイの製造方法
|
CN114038743A
(zh)
*
|
2022-01-07 |
2022-02-11 |
绍兴中芯集成电路制造股份有限公司 |
沟槽栅器件的制造方法
|