DE3771241D1 - Dynamischer ram. - Google Patents

Dynamischer ram.

Info

Publication number
DE3771241D1
DE3771241D1 DE8787301110T DE3771241T DE3771241D1 DE 3771241 D1 DE3771241 D1 DE 3771241D1 DE 8787301110 T DE8787301110 T DE 8787301110T DE 3771241 T DE3771241 T DE 3771241T DE 3771241 D1 DE3771241 D1 DE 3771241D1
Authority
DE
Germany
Prior art keywords
dynamic ram
ram
dynamic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787301110T
Other languages
English (en)
Inventor
Hiroshi Mitsubishi De Miyamoto
Michihiro Mitsubishi De Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=12597372&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3771241(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE3771241D1 publication Critical patent/DE3771241D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE8787301110T 1986-02-25 1987-02-09 Dynamischer ram. Expired - Fee Related DE3771241D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61041043A JPS62197992A (ja) 1986-02-25 1986-02-25 ダイナミツクｒａｍ

Publications (1)

Publication Number Publication Date
DE3771241D1 true DE3771241D1 (de) 1991-08-14

Family

ID=12597372

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787301110T Expired - Fee Related DE3771241D1 (de) 1986-02-25 1987-02-09 Dynamischer ram.

Country Status (4)

Country Link
US (1) US4739500A (de)
EP (1) EP0239208B1 (de)
JP (1) JPS62197992A (de)
DE (1) DE3771241D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612610B2 (ja) * 1986-06-24 1994-02-16 日本電気株式会社 ダイナミツク型半導体メモリ
US5132930A (en) * 1986-07-31 1992-07-21 Mitsubishi Denki Kabushiki Kaisha CMOS dynamic memory device having multiple flip-flop circuits selectively coupled to form sense amplifiers specific to neighboring data bit lines
JPS63183691A (ja) * 1987-01-26 1988-07-29 Mitsubishi Electric Corp 半導体記憶装置
US4980863A (en) * 1987-03-31 1990-12-25 Kabushiki Kaisha Toshiba Semiconductor memory device having switching circuit for coupling together two pairs of bit lines
EP0321847B1 (de) * 1987-12-21 1994-06-29 Kabushiki Kaisha Toshiba Halbleiterspeicher, der fähig zur Verbesserung der Datenwiedereinschreibgeschwindigkeit ist
JPH01171195A (ja) * 1987-12-25 1989-07-06 Sony Corp メモリ装置
US5148399A (en) * 1988-06-28 1992-09-15 Oki Electric Industry Co., Ltd. Sense amplifier circuitry selectively separable from bit lines for dynamic random access memory
JPH03176891A (ja) * 1989-12-04 1991-07-31 Nec Corp 半導体記憶装置
US5426610A (en) * 1990-03-01 1995-06-20 Texas Instruments Incorporated Storage circuitry using sense amplifier with temporary pause for voltage supply isolation
JP3101298B2 (ja) * 1990-03-30 2000-10-23 株式会社東芝 半導体メモリ装置
KR950009234B1 (ko) * 1992-02-19 1995-08-18 삼성전자주식회사 반도체 메모리장치의 비트라인 분리클럭 발생장치
JP2937717B2 (ja) * 1993-11-24 1999-08-23 株式会社東芝 メモリ装置
KR0121777B1 (ko) * 1994-05-23 1997-12-05 김영환 고속 동작용 감지 증폭기
JPH0887887A (ja) * 1994-09-17 1996-04-02 Toshiba Corp 半導体記憶装置
US5671187A (en) * 1995-06-07 1997-09-23 Texas Instruments Incorporated Storage circuit
JP4036487B2 (ja) * 1995-08-18 2008-01-23 株式会社ルネサステクノロジ 半導体記憶装置、および半導体回路装置
US20060096193A1 (en) * 2004-10-22 2006-05-11 Ohrstrom Rolf J Extrusion profile

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2647394C2 (de) * 1976-10-20 1978-11-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen MOS-Halbleiterspeicherbaustein
JPS57100689A (en) * 1980-12-15 1982-06-22 Fujitsu Ltd Semiconductor storage device
JPS58125293A (ja) * 1982-01-22 1983-07-26 Hitachi Ltd 半導体記憶装置
US4493056A (en) * 1982-06-30 1985-01-08 International Business Machines Corporation RAM Utilizing offset contact regions for increased storage capacitance
JPH0670878B2 (ja) * 1982-11-30 1994-09-07 富士通株式会社 半導体記憶装置
JPS6085492A (ja) * 1983-10-17 1985-05-14 Hitachi Ltd ダイナミツクメモリ装置
JPS60234295A (ja) * 1984-05-04 1985-11-20 Fujitsu Ltd 半導体記憶装置
JPH0746501B2 (ja) * 1984-06-15 1995-05-17 日本電気株式会社 Ｃ−ｍｉｓ感知増幅器
US4656613A (en) * 1984-08-29 1987-04-07 Texas Instruments Incorporated Semiconductor dynamic memory device with decoded active loads

Also Published As

Publication number Publication date
EP0239208A3 (en) 1989-07-12
EP0239208B1 (de) 1991-07-10
JPS62197992A (ja) 1987-09-01
EP0239208A2 (de) 1987-09-30
US4739500A (en) 1988-04-19

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee