DE68919545D1 - Nichtflüchtige Speichereinrichtung, die in einem weiten Bereich des Spannungspegels der Leistungsquelle stabil arbeitet. - Google Patents

Nichtflüchtige Speichereinrichtung, die in einem weiten Bereich des Spannungspegels der Leistungsquelle stabil arbeitet.

Info

Publication number
DE68919545D1
DE68919545D1 DE68919545T DE68919545T DE68919545D1 DE 68919545 D1 DE68919545 D1 DE 68919545D1 DE 68919545 T DE68919545 T DE 68919545T DE 68919545 T DE68919545 T DE 68919545T DE 68919545 D1 DE68919545 D1 DE 68919545D1
Authority
DE
Germany
Prior art keywords
power source
memory device
volatile memory
voltage level
wide range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68919545T
Other languages
English (en)
Other versions
DE68919545T2 (de
Inventor
Nobutaka C O Intellec Kitagawa
Makoto C O Intellectual Pr Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68919545D1 publication Critical patent/DE68919545D1/de
Publication of DE68919545T2 publication Critical patent/DE68919545T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
DE68919545T 1988-06-24 1989-06-22 Nichtflüchtige Speichereinrichtung, die in einem weiten Bereich des Spannungspegels der Leistungsquelle stabil arbeitet. Expired - Fee Related DE68919545T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15646288A JPH0770235B2 (ja) 1988-06-24 1988-06-24 不揮発性メモリ回路装置

Publications (2)

Publication Number Publication Date
DE68919545D1 true DE68919545D1 (de) 1995-01-12
DE68919545T2 DE68919545T2 (de) 1995-05-04

Family

ID=15628278

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68919545T Expired - Fee Related DE68919545T2 (de) 1988-06-24 1989-06-22 Nichtflüchtige Speichereinrichtung, die in einem weiten Bereich des Spannungspegels der Leistungsquelle stabil arbeitet.

Country Status (5)

Country Link
US (1) US4972378A (de)
EP (1) EP0347909B1 (de)
JP (1) JPH0770235B2 (de)
KR (1) KR920001077B1 (de)
DE (1) DE68919545T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001167591A (ja) * 1999-12-08 2001-06-22 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2573335B2 (ja) * 1988-11-09 1997-01-22 株式会社東芝 不揮発性メモリ
US5237534A (en) * 1989-04-27 1993-08-17 Kabushiki Kaisha Toshiba Data sense circuit for a semiconductor nonvolatile memory device
JP2573380B2 (ja) * 1989-12-22 1997-01-22 株式会社東芝 不揮発性半導体メモリ
US5260706A (en) * 1990-03-29 1993-11-09 Samsung Electronics Co., Ltd. Priority encoder
US5627778A (en) * 1990-07-24 1997-05-06 Texas Instruments Incorporated Dram sensing scheme
US5299165A (en) * 1990-10-17 1994-03-29 Hitachi, Ltd Semiconductor memory having one-transistor/one-capacitor memory cells and having both improved noise ratio and high density integration
JP3002309B2 (ja) * 1990-11-13 2000-01-24 ウエハスケール インテグレーション， インコーポレイテッド 高速ｅｐｒｏｍアレイ
JP2637314B2 (ja) * 1991-08-30 1997-08-06 株式会社東芝 不揮発性メモリ回路
EP1032034A1 (de) * 1992-01-22 2000-08-30 Macronix International Co., Ltd. Verfahren zur Speicherbauelementherstellung
US5526307A (en) * 1992-01-22 1996-06-11 Macronix International Co., Ltd. Flash EPROM integrated circuit architecture
US5618742A (en) * 1992-01-22 1997-04-08 Macronix Internatioal, Ltd. Method of making flash EPROM with conductive sidewall spacer contacting floating gate
US5267196A (en) * 1992-06-19 1993-11-30 Intel Corporation Floating gate nonvolatile memory with distributed blocking feature
DE69322251T2 (de) * 1992-09-04 1999-07-29 Fuji Kagaku Kogyo K.K., Toyama Medizinische zusammensetzung
JP3474614B2 (ja) * 1993-12-14 2003-12-08 マクロニクス インターナショナル カンパニイ リミテッド 不揮発性半導体メモリ装置及びその動作方法
EP0676768B1 (de) * 1994-03-28 2000-12-27 STMicroelectronics S.r.l. Verfahren und Schaltung zur Referenzsignalerzeugung zur Differentialauswertung des Inhalts von nichtflüchtigen Speicherzellen
DE4425280C2 (de) * 1994-07-16 1997-05-07 Knoll Ag Verwendung von (S)-Adenosyl-L-methionin und dessen physiologisch verträglichen Salzen zur Behandlung von Reperfusionsschäden, die nach temporärer fokaler Ischämie ausgelöst werden
GB9423034D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A reference circuit
WO1996041346A1 (en) * 1995-06-07 1996-12-19 Macronix International Co., Ltd. Automatic programming algorithm for page mode flash memory with variable programming pulse height and pulse width
US5650966A (en) * 1995-11-01 1997-07-22 Advanced Micro Devices, Inc. Temperature compensated reference for overerase correction circuitry in a flash memory
US5640114A (en) * 1995-12-27 1997-06-17 Vlsi Technology, Inc. Versatile select and hold scan flip-flop
DE69630672D1 (de) * 1996-03-29 2003-12-18 St Microelectronics Srl Referenzsystem zur Bestimmung des Programmierungs-/Nicht-Programmierungszustandes einer Speicherzelle, insbesondere für nichtflüchtige Speicher
KR100357692B1 (ko) * 2000-10-27 2002-10-25 삼성전자 주식회사 비휘발성 메모리소자 및 그 제조방법
JP4472449B2 (ja) * 2004-07-12 2010-06-02 富士通マイクロエレクトロニクス株式会社 半導体記憶装置および半導体記憶装置の制御方法
JP4628114B2 (ja) * 2005-01-20 2011-02-09 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP4609722B2 (ja) * 2005-12-09 2011-01-12 セイコーエプソン株式会社 強誘電体記憶装置および電子機器
JP6465093B2 (ja) * 2016-10-17 2019-02-06 株式会社椿本チエイン 可動体移動装置
WO2018073708A1 (en) * 2016-10-20 2018-04-26 Semiconductor Energy Laboratory Co., Ltd. Storage device, driving method thereof, semiconductor device, electronic component, and electronic device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192067A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Erasable and programmable read only memory unit
DE3279855D1 (en) * 1981-12-29 1989-09-07 Fujitsu Ltd Nonvolatile semiconductor memory circuit
US4611301A (en) * 1983-04-07 1986-09-09 Kabushiki Kaisha Toshiba Read only memory
JPS6173300A (ja) * 1984-09-17 1986-04-15 Toshiba Corp 半導体記憶装置
JPS6258496A (ja) * 1985-09-09 1987-03-14 Toshiba Corp 半導体記憶装置
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
JPS62197996A (ja) * 1986-02-24 1987-09-01 Toshiba Corp 半導体メモリのセンスアンプ
JPS62231500A (ja) * 1986-03-31 1987-10-12 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
KR900000916A (ko) 1990-01-31
JPH0770235B2 (ja) 1995-07-31
KR920001077B1 (ko) 1992-02-01
EP0347909B1 (de) 1994-11-30
EP0347909A2 (de) 1989-12-27
EP0347909A3 (de) 1991-08-14
DE68919545T2 (de) 1995-05-04
US4972378A (en) 1990-11-20
JPH027293A (ja) 1990-01-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee