DE60316449D1 - Nichtflüchtige speicherarrayarchitektur mit kontaktloser separater p-mulde mit gleichförmiger tunnelung (cusp), herstellung und betrieb - Google Patents

Nichtflüchtige speicherarrayarchitektur mit kontaktloser separater p-mulde mit gleichförmiger tunnelung (cusp), herstellung und betrieb

Info

Publication number
DE60316449D1
DE60316449D1 DE60316449T DE60316449T DE60316449D1 DE 60316449 D1 DE60316449 D1 DE 60316449D1 DE 60316449 T DE60316449 T DE 60316449T DE 60316449 T DE60316449 T DE 60316449T DE 60316449 D1 DE60316449 D1 DE 60316449D1
Authority
DE
Germany
Prior art keywords
muld
cusp
contactless
separate
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60316449T
Other languages
English (en)
Other versions
DE60316449T2 (de
Inventor
Chun Chen
Andrei Mihnea
Kirk D Prall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE60316449D1 publication Critical patent/DE60316449D1/de
Publication of DE60316449T2 publication Critical patent/DE60316449T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Devices For Executing Special Programs (AREA)
DE60316449T 2002-08-29 2003-08-29 Nichtflüchtige speicherarrayarchitektur mit kontaktloser separater p-mulde mit gleichförmiger tunnelung (cusp), herstellung und betrieb Expired - Lifetime DE60316449T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US230597 2002-08-29
US10/230,597 US6649453B1 (en) 2002-08-29 2002-08-29 Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation
PCT/US2003/027240 WO2004021362A1 (en) 2002-08-29 2003-08-29 Contactless uniform-tunneling separate p-well (cusp) non-volatile memory array architecture, fabrication and operation

Publications (2)

Publication Number Publication Date
DE60316449D1 true DE60316449D1 (de) 2007-10-31
DE60316449T2 DE60316449T2 (de) 2008-06-26

Family

ID=29420086

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60316449T Expired - Lifetime DE60316449T2 (de) 2002-08-29 2003-08-29 Nichtflüchtige speicherarrayarchitektur mit kontaktloser separater p-mulde mit gleichförmiger tunnelung (cusp), herstellung und betrieb

Country Status (9)

Country Link
US (5) US6649453B1 (de)
EP (1) EP1535286B1 (de)
JP (1) JP2005537649A (de)
KR (1) KR100713741B1 (de)
CN (1) CN1685442A (de)
AT (1) ATE373861T1 (de)
AU (1) AU2003265846A1 (de)
DE (1) DE60316449T2 (de)
WO (1) WO2004021362A1 (de)

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US7196013B2 (en) * 2002-12-12 2007-03-27 Intel Corporation Capping layer for a semiconductor device and a method of fabrication
US20050110083A1 (en) * 2003-11-21 2005-05-26 Gammel Peter L. Metal-oxide-semiconductor device having improved gate arrangement
US7075140B2 (en) * 2003-11-26 2006-07-11 Gregorio Spadea Low voltage EEPROM memory arrays
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US7102188B1 (en) * 2005-04-05 2006-09-05 Ami Semiconductor, Inc. High reliability electrically erasable and programmable read-only memory (EEPROM)
US7638855B2 (en) * 2005-05-06 2009-12-29 Macronix International Co., Ltd. Anti-fuse one-time-programmable nonvolatile memory
US7179717B2 (en) * 2005-05-25 2007-02-20 Micron Technology, Inc. Methods of forming integrated circuit devices
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US7495279B2 (en) * 2005-09-09 2009-02-24 Infineon Technologies Ag Embedded flash memory devices on SOI substrates and methods of manufacture thereof
US7439567B2 (en) * 2006-08-09 2008-10-21 Atmel Corporation Contactless nonvolatile memory array
US7898863B2 (en) * 2007-08-01 2011-03-01 Micron Technology, Inc. Method, apparatus, and system for improved read operation in memory
CN102024824B (zh) * 2009-09-21 2012-08-22 上海宏力半导体制造有限公司 阵列式场效应晶体管
KR101128716B1 (ko) * 2009-11-17 2012-03-23 매그나칩 반도체 유한회사 반도체 장치
US8853787B2 (en) 2009-11-17 2014-10-07 Magnachip Semiconductor, Ltd. High voltage semiconductor device
US9431111B2 (en) * 2014-07-08 2016-08-30 Ememory Technology Inc. One time programming memory cell, array structure and operating method thereof
CN104362095B (zh) * 2014-11-05 2017-12-01 北京大学 一种隧穿场效应晶体管的制备方法

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Also Published As

Publication number Publication date
WO2004021362A1 (en) 2004-03-11
CN1685442A (zh) 2005-10-19
AU2003265846A1 (en) 2004-03-19
ATE373861T1 (de) 2007-10-15
US6649453B1 (en) 2003-11-18
US20040072391A1 (en) 2004-04-15
US7199422B2 (en) 2007-04-03
EP1535286A1 (de) 2005-06-01
DE60316449T2 (de) 2008-06-26
EP1535286B1 (de) 2007-09-19
US6930350B2 (en) 2005-08-16
US6984547B2 (en) 2006-01-10
US20050099846A1 (en) 2005-05-12
US20040071008A1 (en) 2004-04-15
US7696557B2 (en) 2010-04-13
US20070164348A1 (en) 2007-07-19
KR20050057073A (ko) 2005-06-16
JP2005537649A (ja) 2005-12-08
KR100713741B1 (ko) 2007-05-02

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